IRFR120NTRPBF vs IPD135N03LGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR120NTRPBF disebabkan oleh Infineon dan IPD135N03LGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR120NTRPBF | IPD135N03LGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 9.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Maximum Power Dissipation (PD) at TC=25C | 48 W | — |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 210 milliohms at VGS=10V | — |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2 V to 4 V typical | — |
| Total Gate Charge (Qg) typical | 16.7 nC | — |
| Gate-to-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | — |
| Gambaran Suhu Hubungan Operasi | -55C to +175C | — |
| Kemasan | TO-252AA (DPAK) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Channel Type | N-Channel Enhancement Mode | — |
| Technology | HEXFET (IR MOSFET fifth generation) | — |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS] | — |
| Thermal Resistance Junction-to-Case (RthJC) max | [DATA_NEEDED: RthJC] | — |
| Lead-Free / RoHS Status | Lead-Free, RoHS Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS™ |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) | — | 30 A (Tc) |
| Power Dissipation (PD) | — | 31 W (Tc) |
| Kemasan / Case | — | PG-TO252-3 (DPAK), Surface Mount |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at 10V VGS] |
| Gate Charge (Qg) | — | Ultra-low (per OptiMOS™ family spec) |
| Output Charge (Qoss) | — | Ultra-low (per OptiMOS™ family spec) |
| Gambaran Suhu Operasi | — | -55°C to +175°C (TJ max typical for OptiMOS) |
| Aras MSL | — | 1 (per JEDEC J-STD-020) |
| Status RoHS | — | Compliant |
| Lead-Free Finish | — | Yes |
| Qualification | — | Industrial (Infineon OptiMOS™ standard grade) |