IRFR120NTRPBF vs IPD135N03LGATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRFR120NTRPBF tarafından Infineon ve IPD135N03LGATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRFR120NTRPBF | IPD135N03LGATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 9.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Maximum Power Dissipation (PD) at TC=25C | 48 W | — |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 210 milliohms at VGS=10V | — |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2 V to 4 V typical | — |
| Total Gate Charge (Qg) typical | 16.7 nC | — |
| Gate-to-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | — |
| İşletim Jant Sıcaklığı Aralığı | -55C to +175C | — |
| Paket | TO-252AA (DPAK) | — |
| Montaj Türü | Surface Mount | Surface Mount |
| Channel Type | N-Channel Enhancement Mode | — |
| Technology | HEXFET (IR MOSFET fifth generation) | — |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS] | — |
| Thermal Resistance Junction-to-Case (RthJC) max | [DATA_NEEDED: RthJC] | — |
| Lead-Free / RoHS Status | Lead-Free, RoHS Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS™ |
| Transistor Türü | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) | — | 30 A (Tc) |
| Power Dissipation (PD) | — | 31 W (Tc) |
| Paket / Kas | — | PG-TO252-3 (DPAK), Surface Mount |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at 10V VGS] |
| Gate Charge (Qg) | — | Ultra-low (per OptiMOS™ family spec) |
| Output Charge (Qoss) | — | Ultra-low (per OptiMOS™ family spec) |
| İşletim Sıcaklığı Aralığı | — | -55°C to +175°C (TJ max typical for OptiMOS) |
| MSL Seviyesi | — | 1 (per JEDEC J-STD-020) |
| RoHS Durumu | — | Compliant |
| Lead-Free Finish | — | Yes |
| Qualification | — | Industrial (Infineon OptiMOS™ standard grade) |