IRFR2405TRLPBF vs IRFR3607TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR2405TRLPBF disebabkan oleh Infineon dan IRFR3607TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR2405TRLPBF | IRFR3607TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET, 7th generation) | IR HEXFET (planar DMOS) |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc | 56 A | — |
| Pulsed Drain Current (IDM) | 200 A (typical, per datasheet family) | — |
| On-Resistance RDS(on) max @ VGS=10V | 16 mOhm | — |
| Gate Charge (Qg) typical | 70 nC | — |
| Power Dissipation (PD) at Tc | 110 W | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gambaran Suhu Operasi | -55 C to +175 C (junction) | -55C to +175C (TJ max 175C per datasheet convention) |
| Kemasan | TO-252AA (DPAK), 3-pin (2 + Tab) | TO-252AA (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Avalanche Energy Rated | Yes (HEXFET ruggedized design) | — |
| Lead-Free / RoHS | Yes, PBF suffix indicates lead-free and RoHS compliant | — |
| Packaging | Tape & Reel (TR) | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID, Tc) | — | 56 A |
| Calculated Die Drain Current | — | 80 A |
| On-State Resistance (RDS(on)) | — | 9 mOhm @ VGS=10V, ID=46A |
| Gate Threshold Voltage (VGS(th)) | — | 4 V |
| Total Gate Charge (Qg) | — | 56 nC |
| Gate-to-Source Voltage (VGS) Max | — | +/-20 V |
| Power Dissipation (PD, Tc) | — | 140 W |
| Thermal Resistance (RthJC) | — | 1.0 C/W |
| Avalanche SOA | — | Fully characterized |
| RoHS / Lead-Free | — | Compliant / Pb-free (PBF suffix, JESD-609 e3) |