IRFR3806TRPBF vs IRFR5305TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR3806TRPBF disebabkan oleh Infineon dan IRFR5305TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR3806TRPBF | IRFR5305TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Transistor Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tc | 43 A | — |
| On-State Resistance RDS(on) max | 15.8 mOhm at VGS = 10 V | — |
| Total Gate Charge (Qg) | 22 nC | — |
| Power Dissipation (Pd) at Tc = 25 C | 71 W | — |
| Kemasan / Case | TO-252AA (DPAK) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET) | HEXFET (IR MOSFET) |
| Gambaran Suhu Operasi | -55 C to +175 C | -55 C to +175 C |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Number of Units in IC | 1 | — |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) | — |
| Avalanche Rated | Yes (HEXFET family) | — |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) Max | — | -55 V |
| Continuous Drain Current (ID) at TC=25C | — | 31 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| On-Resistance (RDS(on)) Max at VGS=-10V | — | 65 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | -2 V to -4 V |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25C | — | 110 W |
| Single-Pulse Avalanche Energy (EAS) | — | 270 mJ |
| Kemasan | — | TO-252AA (DPAK) |
| Aras MSL | — | 1 |
| Status RoHS | — | Compliant (Pb-free PBF suffix) |
| Lead-Free Finish | — | Yes (PBF suffix) |