IRFR3806TRPBF vs IRFZ48NSTRLPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR3806TRPBF disebabkan oleh Infineon dan IRFZ48NSTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR3806TRPBF | IRFZ48NSTRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Transistor Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tc | 43 A | — |
| On-State Resistance RDS(on) max | 15.8 mOhm at VGS = 10 V | — |
| Total Gate Charge (Qg) | 22 nC | 54 nC |
| Power Dissipation (Pd) at Tc = 25 C | 71 W | — |
| Kemasan / Case | TO-252AA (DPAK) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET) | — |
| Gambaran Suhu Operasi | -55 C to +175 C | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Number of Units in IC | 1 | — |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) | — |
| Avalanche Rated | Yes (HEXFET family) | — |
| FET Type | — | N-Channel Power MOSFET |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) @ Tc=25C | — | 64 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-to-Source On-Resistance (Rds(on)) | — | 14 mΩ at VGS = 10 V |
| Gate-to-Source Threshold Voltage (VGS(th)) | — | 2.0 V to 4.0 V |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Power Dissipation (Pd) @ Tc=25C | — | 130 W |
| Power Dissipation (Pd) @ Ta=25C on FR-4 | — | 3.8 W |
| Suhu Hubungan Operasi | — | -55C to +175C |
| Kemasan | — | D2PAK (TO-263) Surface Mount |
| Packaging | — | Tape & Reel (13-inch reel, TRL) |
| Lead Finish | — | Lead-free (PBF) matte tin |
| Status RoHS | — | Compliant |
| Technology Family | — | HEXFET advanced process technology |