IRFR5505TRPBF vs IRFR5505TRLPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR5505TRPBF disebabkan oleh Infineon dan IRFR5505TRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR5505TRPBF | IRFR5505TRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Series | HEXFET | — |
| Polarity | P-Channel | P-Channel |
| Technology | IR MOSFET (HEXFET 5th generation) | IR MOSFET™ (HEXFET® generation 5) |
| Drain-Source Voltage (VDS) max | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | -18 A | — |
| Pulsed Drain Current (IDM) | -72 A | [DATA_NEEDED: IDM] |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| On-Resistance RDS(on) max at VGS=-10V | 110 mOhm | — |
| Total Gate Charge (Qg) | 21.3 nC | 21.3 nC |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Rise Time (tr) | [DATA_NEEDED: tr] | — |
| Fall Time (tf) | [DATA_NEEDED: tf] | — |
| Maximum Power Dissipation (PD) at TC=25C | 57 W | — |
| Suhu Hubungan Operasi | -55 C to +175 C | — |
| Thermal Resistance Junction-to-Case (RthJC) | 2.2 C/W | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | 50 C/W (typical, DPAK on 1 oz copper) | — |
| Kemasan | TO-252AA (DPAK), surface mount | TO-252AA (DPAK), surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant (PBF suffix) | — |
| Lead-Free | Yes (PBF suffix) | — |
| MOSFET Operating Mode | — | Enhancement |
| VDS (Drain-Source Voltage) | — | -55 V |
| VGS (Gate-Source Voltage) | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) | — | -18 A (Tc) |
| On-Resistance RDS(on) max | — | 110 mOhm (VGS = -10 V) |
| Power Dissipation (PD) | — | 57 W (Tc = 25 °C) |
| Gambaran Suhu Operasi | — | -55 °C to +175 °C |
| Thermal Resistance Junction-to-Case (RθJC) | — | [DATA_NEEDED: RθJC] |
| Lead-Free / RoHS | — | Yes (PBF suffix) |
| Aras MSL | — | 1 |