IRLR2705TRPBF vs IRFR1205TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLR2705TRPBF disebabkan oleh Infineon dan IRFR1205TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLR2705TRPBF IRFR1205TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET, Metal Oxide N-Channel
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at Tc=25C 28 A —
Continuous Drain Current (ID) at TA=25C [DATA_NEEDED: ID at TA=25C with 1in2 copper] —
RDS(on) Max at VGS=10V 40 mOhm —
RDS(on) Max at VGS=5V [DATA_NEEDED: RDS(on) at VGS=5V] —
Gate-to-Source Voltage (VGS) Max [DATA_NEEDED: VGS absolute max, +/-V] —
Gate Threshold Voltage (VGS(th)) Logic-Level (compatible with 4V drive) 2 V min, 4 V max
Total Gate Charge (Qg) 16.7 nC 43.3 nC
Power Dissipation (PD) at Tc=25C 68 W —
Power Dissipation (PD) at TA=25C [DATA_NEEDED: PD at TA=25C with 1in2 copper] —
Suhu Hubungan Operasi -55C to +175C -55C to +175C
Kemasan TO-252AA (DPAK) TO-252AA (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Technology HEXFET (IR MOSFET generation 5) HEXFET (IR MOSFET, 5th generation)
Avalanche Rated Yes —
Lead-Free / RoHS Yes (Pb-free, RoHS compliant) —
Aras MSL [DATA_NEEDED: MSL rating per JEDEC J-STD-020] —
Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at TC=25C — 44 A
Pulsed Drain Current (IDM) — 160 A
Gate-Source Voltage (VGS) max — +/- 20 V
On-Resistance RDS(on) at VGS=10V — 27 mOhm max
Power Dissition (PD) at TC=25C — 107 W
Status RoHS — Compliant (PBF suffix = lead-free)
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED: halogen status]

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