ISC009N06LM5ATMA1 vs ISC0805NLSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC009N06LM5ATMA1 disebabkan oleh Infineon dan ISC0805NLSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC009N06LM5ATMA1 ISC0805NLSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
Technology OptiMOS 5 60V N-channel trench MOSFET —
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 60 V 100 V
Continuous Drain Current (ID) at Ta 41 A —
Continuous Drain Current (ID) at Tc 348 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS maximum rating] —
Gate-Source Threshold (VGS(th)) [DATA_NEEDED: VGS threshold typical] —
On-Resistance RDS(on) max at VGS=10V 0.9 mOhm 10.7 mΩ at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V]
Power Dissipation at Ta (PD) 3 W —
Power Dissipation at Tc (PD) 214 W —
Gambaran Suhu Operasi -55 C to +175 C -55 °C to +150 °C
Kemasan PG-TSON-8-3 (SuperSO8 5x6) PG-TDSON-8-46 (SuperSO8 5x6)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL [DATA_NEEDED: MSL rating] —
Status RoHS Compliant Compliant
Product Family — OptiMOS™ 5
Continuous Drain Current (ID) at TA=25°C — 13 A
Continuous Drain Current (ID) at TC=25°C — 71 A
Power Dissipation (PD) at TA — 2.5 W
Power Dissipation (PD) at TC — 74 W
On-Resistance RDS(on) max at VGS=4.5V — 10.7 mΩ
Gate Threshold Voltage VGS(th) typ — 2.3 V
Gate Charge Qg typ at VGS=4.5V — 16 nC
Input Capacitance Ciss — 2.2 nF
Reverse Transfer Capacitance Crss — 23 pF
Output Capacitance Coss — 360 pF

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