ISCH99N04NM7VATMA1 vs IPC100N04S5L1R5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISCH99N04NM7VATMA1 disebabkan oleh Infineon dan IPC100N04S5L1R5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | ISCH99N04NM7VATMA1 | IPC100N04S5L1R5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current at Ta (I_D) | 40 A | — |
| Pulsed Drain Current at Tc (I_DM) | 284 A | — |
| Power Dissipation at Ta (P_D) | 3 W | — |
| Power Dissipation at Tc (P_D) | 150 W | — |
| Gate Threshold Voltage (V_th) | Up to 3.2 V | — |
| Kemasan | PG-TDSON-8 (TDSON-8 FL) | PG-TDSON-8-34 (SS08 leadless) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant (Green Product) |
| Technology | OptiMOS 7 Trench Power MOSFET | — |
| Operating Mode | Enhancement-mode | — |
| Target Application | 12 V to 48 V Motor Drives | — |
| Product Family | — | OptiMOS-5 40 V |
| Polarity / Channel Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) Max | — | 40 V |
| Gate-Source Voltage (VGS) Max | — | 20 V |
| Continuous Drain Current (ID) at Tc=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at Tc=25C | — | 115 W |
| On-Resistance RDS(on) at VGS=10 V | — | 1.5 mOhm (typ) |
| On-Resistance RDS(on) at VGS=4.5 V | — | 1.8 mOhm (typ) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ] |
| Gambaran Suhu Operasi | — | -55C to +175C |
| Aras MSL | — | MSL1 (260C peak reflow) |
| AEC-Q101 Qualified | — | Yes |
| Avalanche Tested | — | 100% |