ISZ033N03LF2SATMA1 vs IQE013N04LM6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISZ033N03LF2SATMA1 disebabkan oleh Infineon dan IQE013N04LM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISZ033N03LF2SATMA1 IQE013N04LM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V 40 V
Continuous Drain Current (ID) at TA=25C 20 A —
Continuous Drain Current (ID) at TC=25C 109 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) at TA=25C 3 W —
Power Dissipation (PD) at TC=25C 71 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 2.35 V max @ 30 uA 2 V (typ)
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at 10V VGS] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Suhu Hubungan Operasi -55 C to +175 C —
Kemasan PG-TSDSON-8 FL (8-pin) PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 5 OptiMOS N-channel trench MOSFET
Status RoHS Compliant Compliant
Polarity — N-Channel
Gate-Source Voltage (VGS) — ±20 V
Continuous Drain Current (Ta) — 31 A
Continuous Drain Current (Tc) — 205 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 107 W
On-Resistance RDS(on) max — [DATA_NEEDED: RDS(on) max value at VGS=10V]
On-Resistance RDS(on) typ — 1.35 mΩ @ VGS=10 V, ID=20 A
Gambaran Suhu Operasi — -55 °C to +175 °C
Source-Down Topology — Yes (flip-chip die attach, drain on top thermal pad)

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