ISZ072N06NM6ATMA1 vs ISZ025N06NM6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISZ072N06NM6ATMA1 disebabkan oleh Infineon dan ISZ025N06NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
ISZ025N06NM6ATMA1 - 60V 137A OptiMOS 6 N-Channel MOSFET | Infineon
ISZ025N06NM6ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | ISZ072N06NM6ATMA1 | ISZ025N06NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60V | OptiMOS 6 60 V |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID, Tc=25°C) | 57 A | 137 A |
| Continuous Drain Current (ID, Ta) | 12.7 A | 22 A |
| RDS(on) max @ VGS=10V | 7.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V (typ) | — |
| Pembuangan Kuasa (TC=25°C) | 50 W | — |
| Power Dissipation (Ta) | 2.5 W | 2.5 W |
| Kemasan | PG-TSDSON-8-34 (TSDSON-8 FL) | PG-TSDSON-8-34 (5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +175C ( Tj max 175C ) | -55 °C to +175 °C |
| Technology | OptiMOS 6 trench MOSFET | Trench MOSFET |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 | [DATA_NEEDED: MSL moisture sensitivity level] |
| Maximum RDS(on) at VGS=10V | — | 2.5 mΩ |
| Gate Threshold Voltage (VGS(th), typ) | — | 3.3 V |
| Power Dissipation (Tc) | — | 100 W |
| Gate Drive Voltage (VGS) | — | ±20 V max |