K4A4G165WD-BCTD vs K4A4G165WF-BCTD Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A4G165WD-BCTD disebabkan oleh Samsung Electronics dan K4A4G165WF-BCTD disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A4G165WD-BCTD | K4A4G165WF-BCTD |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | — | In Stock |
| Harga Unit (USD) | — | $8.20 |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Kadar Data | 2666 Mbps/pin (-BCTD speed grade) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Core Supply (VPP) | 2.5 V | — |
| Antaramuka | SSTL-12 | SSTL-12 |
| Data Mask | Yes (DM per byte lane) | — |
| Bank Architecture | 16 banks / 4 bank groups | — |
| Kemasan | 96-ball FBGA | FBGA-96 (PBGA96) |
| Jenis Pemasangan | Surface Mount (BGA) | Surface Mount |
| Suhu Operasi | 0C to +85C (commercial) | 0C to +95C |
| On-Die Termination | Dynamic ODT | — |
| ZQ Calibration | Yes (external RZQ resistor) | — |
| CRC / CA Parity | CRC read/write support | — |
| Reset | Asynchronous reset (RESET_n) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Saiz Ingatan | — | 4 Gbit |
| Speed (Data Rate) | — | 2666 Mbps (DDR4-2666) |
| Supply Voltage VDD | — | 1.2 V (1.14 V to 1.26 V) |
| I/O Voltage VDDQ | — | 1.2 V |
| Ciri-ciri | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Technology | — | Samsung F-die CMOS |
| Bank Groups | — | 4 (x16 configuration) |
| Refresh | — | Self-refresh and auto-refresh supported |