K4A8G165WB-BCRC vs K4A8G085WC-BCRC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G165WB-BCRC disebabkan oleh Samsung Electronics dan K4A8G085WC-BCRC disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A8G165WB-BCRC | K4A8G085WC-BCRC |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM (DRAM, volatile) | DDR4 SDRAM |
| Saiz Ingatan | 8 Gb | — |
| Memory Organization | 512M x 16 | — |
| Antaramuka | Parallel (DDR4 SDRAM bus) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Kadar Data | 2400 Mbps/pin (DDR4-2400) | 2400 Mbps (DDR4-2400) |
| Technology | CMOS, B-die 8Gb die | — |
| Kemasan | 96-ball FBGA (PBGA96) | 78-ball FBGA (TFBGA) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -40C to +95C | 0C to +95C |
| Auto Precharge | Yes | Yes |
| Asynchronous Reset | Yes | Yes |
| CRC / CA Parity | CRC function supported | — |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | Yes |
| Clock Frequency | 1200 MHz (DDR4-2400) | — |
| Density | — | 8 Gbit |
| Organisasi | — | 1G x 8 |
| Tegangan Pemberi Arus | — | 1.2 V |
| Terminal Pitch | — | 0.8 mm |
| CRC Function | — | Yes |
| Dynamic On-Die Termination | — | Yes |
| Data Mask Function | — | Yes |
| Status RoHS | — | Compliant |
| Refresh | — | Auto/Self refresh |