K4B4G1646D-BCK0 vs K4B4G1646E-BYK0 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646D-BCK0 disebabkan oleh Samsung Electronics dan K4B4G1646E-BYK0 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4B4G1646D-BCK0 | K4B4G1646E-BYK0 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Number of Banks | 8 | — |
| Kadar Data | 1600 Mbps per pin | DDR3-1600 (800 MHz) |
| Clock Frequency | 800 MHz | — |
| Supply Voltage (VDD) | 1.35V (1.283V to 1.45V) | — |
| Supply Voltage (VDDQ) | 1.35V (1.283V to 1.45V) | — |
| Latensi CAS | 11 (programmable) | 11 (CL-tRCD-tRP) |
| Burst Length | 8, 4 | 8 (fixed), 4 (burst chop) |
| Kemasan | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Suhu Operasi | 0°C to 95°C (Tc) | 0°C to +95°C (TC) |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Boson Bebas | Yes | — |
| Tegangan Pemberi Arus | — | 1.35 V (1.283 V to 1.45 V) |
| On-Die Termination | — | Yes (dynamic ODT) |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |