K4B4G1646D-BCK0 vs K4B4G1646E-BYK0 比較
詳細並排比較 K4B4G1646D-BCK0 由 Samsung Electronics 與 K4B4G1646E-BYK0 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4B4G1646D-BCK0 | K4B4G1646E-BYK0 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb |
| 組織 | 256M x 16 | 256M x 16 |
| Number of Banks | 8 | — |
| 資料速率 | 1600 Mbps per pin | DDR3-1600 (800 MHz) |
| Clock Frequency | 800 MHz | — |
| Supply Voltage (VDD) | 1.35V (1.283V to 1.45V) | — |
| Supply Voltage (VDDQ) | 1.35V (1.283V to 1.45V) | — |
| CAS 延遲 | 11 (programmable) | 11 (CL-tRCD-tRP) |
| Burst Length | 8, 4 | 8 (fixed), 4 (burst chop) |
| 封裝 | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| 工作溫度 | 0°C to 95°C (Tc) | 0°C to +95°C (TC) |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| 無鹵素 | Yes | — |
| 供應電壓 | — | 1.35 V (1.283 V to 1.45 V) |
| On-Die Termination | — | Yes (dynamic ODT) |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |