K4B4G1646D-BHMA vs K4B4G1646D-BPH90 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646D-BHMA disebabkan oleh Samsung Electronics dan K4B4G1646D-BPH90 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4B4G1646D-BPH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BPH90 ✓ AktifPengandingan Spesifikasi
| Parametr | K4B4G1646D-BHMA | K4B4G1646D-BPH90 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4Gb |
| Organisasi | 256M x 16 | 32M x 16 |
| Kadar Data | 1866 Mbps | 2133 Mb/s per pin |
| Tegangan Pemberi Arus | 1.35 V (1.283 V to 1.45 V) | 1.35V (DDR3L) |
| Kemasan | 96-ball FBGA | 96FBGA |
| Suhu Operasi | -40°C to +95°C (TC) | 0°C to +85°C |
| Latensi CAS | 13 (at 1866 Mbps) | Programmable up to 14 |
| Burst Length | 8 and 4 | 8, 4 (with burst chop) |
| Number of Terminals | 96 | — |
| Lead-Free | Yes | Yes |
| Boson Bebas | Yes | Yes |
| RoHS Compliant | Yes | Yes |
| Die Version | D-die | — |
| Refresh Mode | Auto and Self Refresh | — |
| Number of Banks | — | 8 |
| On-Die Termination | — | Yes |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |