K4B4G1646E-BYK0 vs K4B4G1646D-BCK0 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646E-BYK0 disebabkan oleh Samsung Electronics dan K4B4G1646D-BCK0 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4B4G1646E-BYK0 | K4B4G1646D-BCK0 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Tegangan Pemberi Arus | 1.35 V (1.283 V to 1.45 V) | — |
| Kadar Data | DDR3-1600 (800 MHz) | 1600 Mbps per pin |
| Kemasan | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Suhu Operasi | 0°C to +95°C (TC) | 0°C to 95°C (Tc) |
| Latensi CAS | 11 (CL-tRCD-tRP) | 11 (programmable) |
| Burst Length | 8 (fixed), 4 (burst chop) | 8, 4 |
| On-Die Termination | Yes (dynamic ODT) | — |
| ZQ Calibration | Yes | — |
| Auto Precharge | Yes | — |
| Self-Refresh | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| RoHS | Compliant | Compliant |
| Number of Banks | — | 8 |
| Clock Frequency | — | 800 MHz |
| Supply Voltage (VDD) | — | 1.35V (1.283V to 1.45V) |
| Supply Voltage (VDDQ) | — | 1.35V (1.283V to 1.45V) |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |