MC9S12DG128CPV vs MC9S12DP512CPV Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci MC9S12DG128CPV disebabkan oleh NXP Semiconductors dan MC9S12DP512CPV disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

NXP Semiconductors
MC9S12DG128CPV MC9S12DG128CPV - 16-Bit HCS12 MCU, 128KB Flash | NXP

MC9S12DG128CPV - 16-Bit HCS12 MCU, 128KB Flash | NXP

MC9S12DG128CPV ✓ Aktif
NXP Semiconductors
MC9S12DP512CPV MC9S12DP512CPV - 16-Bit HCS12 MCU, 512KB Flash, 112-LQFP | NXP

MC9S12DP512CPV - 16-Bit HCS12 MCU, 512KB Flash, 112-LQFP | NXP

MC9S12DP512CPV ✓ Aktif

Pengandingan Spesifikasi

Parametr MC9S12DG128CPV MC9S12DP512CPV
Merek NXP Semiconductors NXP Semiconductors
Kategori Microcontrollers Microcontrollers
Status Lingkungan Hidup Aktif Aktif
Core Architecture HCS12 (16-bit CISC) —
Maximum CPU Clock 25 MHz —
Program Memory (Flash) 128 KB (128K x 8) 512 KB (512K x 8)
Data Memory (RAM) 8 KB —
EEPROM 2 KB 4 KB
Number of I/O Pins 91 —
Kemasan / Case 112-LQFP (20 x 20 mm) 112-LQFP (20 x 20 mm)
Analog-to-Digital Converter 8-channel, 10-bit ATD —
CAN Modules Up to 3 x MSCAN (CAN 2.0A/B) —
Serial Interfaces 2 x SCI (UART), 1 x SPI, 1 x I2C —
Timer Enhanced Capture Timer (ECT), 8 channels —
Operating Voltage 4.5 V to 5.5 V (single 5V supply) —
Suhu Operasi -40 C to +125 C (automotive) -40 C to +85 C (industrial)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 3 (168 hours) —
Debug Interface Background Debug Mode (BDM) BDM (Background Debug Mode)
Status RoHS [DATA_NEEDED: RoHS status from manufacturer] Compliant (lead-free)
Flash Endurance 100,000 write/erase cycles (typical) —
Core — HCS12 (16-bit)
Bus Frequency — 25 MHz
RAM Size — 12 KB (12K x 8)
Number of I/O Lines — 91
Tegangan Pemberi Arus — 5.0 V (4.5 V to 5.5 V)
ADC — 2 x 8-channel, 10-bit
PWM Channels — 8
Enhanced Capture Timer — 8-channel 16-bit ECT
SCI (UART) — 2
SPI — 1
I2C — 1
CAN — 1 x CAN 2.0
Oscillator — Internal PLL with external crystal
Process Technology — 0.25 um Flash

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