MRF8S21100HR5 vs MRF8HP21080HR5 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MRF8S21100HR5 disebabkan oleh NXP Semiconductors dan MRF8HP21080HR5 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | MRF8S21100HR5 | MRF8HP21080HR5 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Obsolete | Obsolete |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Jenis Transistor | N-Channel RF Power MOSFET | LDMOS, N-Channel, Dual (2 elements) |
| Polarity | N-Channel | — |
| Operating Mode | Enhancement | — |
| Technology | LDMOS (HV8 generation) | W-CDMA, LTE Lateral N-Channel RF Power MOSFET |
| Drain-Source Breakdown Voltage V(BR)DSS | 65 V | — |
| Test Voltage (Drain) | 28 V | — |
| Test Current | 700 mA | 150 mA |
| Frequency of Operation | 2.17 GHz (max, typical 2110-2170 MHz) | — |
| Power Gain | 18.3 dB at 2.17 GHz | 14.4 dB at 2.17 GHz |
| Output Power (P1dB / pulsed) | 100 W | — |
| Output Power (typical application) | 24 W | — |
| Kemasan | NI-780H-2L (Case 465-06), 2-pin ceramic flange | — |
| Jenis Pemasangan | Surface Mount / Flange Mount | Flange Mount / Chassis Mount |
| Status RoHS | RoHS Compliant | — |
| Operating Class | Class AB, Class C | — |
| Application | W-CDMA, LTE cellular base station | — |
| Configuration | — | Common Source, 2 Elements |
| Frequency | — | 2.17 GHz (2110–2170 MHz cellular band) |
| Test Voltage | — | 28 V |
| Output Power (Avg.) | — | 16 W (W-CDMA/LTE) |
| Drain-Source Voltage Rating | — | 65 V |
| Kemasan / Case | — | NI-780-4 (Case 465M) |
| Number of Terminals | — | 4 |
| Surface Mount | — | No (flange mount) |
| Peak Reflow Temperature | — | 260 C (not applicable - flange mount) |
| Part Status (DigiKey) | — | Discontinued at Digi-Key |