MT25QL01GBBB8E12-0AUT vs MT25QU01GBBB8E12-0AUT Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT25QL01GBBB8E12-0AUT disebabkan oleh Micron Technology dan MT25QU01GBBB8E12-0AUT disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
MT25QL01GBBB8E12-0AUT - 1Gb SPI NOR Flash 133MHz | Micron
MT25QL01GBBB8E12-0AUT ✓ AktifMicron Technology
MT25QU01GBBB8E12-0AUT - 1Gb SPI NOR Flash 133MHz | Micron
MT25QU01GBBB8E12-0AUT ✓ AktifPengandingan Spesifikasi
| Parametr | MT25QL01GBBB8E12-0AUT | MT25QU01GBBB8E12-0AUT |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | EEPROM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash - Serial SPI | NOR Flash, Serial (SPI) |
| Density | 1 Gbit (128 MB) | 1 Gbit (128 MB) |
| Organisasi | 256M x4 (DDP) | x1 / x2 / x4 (I/O width) |
| Tegangan Pemberi Arus | 2.7 V to 3.6 V (3 V class) | 1.8 V |
| Max Clock Frequency | 133 MHz | 133 MHz |
| Antaramuka | SPI - Single/Dual/Quad I/O | SPI, Dual SPI, Quad SPI |
| Sector Erase Sizes | 4 KB / 32 KB / 64 KB | — |
| Suhu Operasi | -40C to +125C | -40C to +125C |
| Kemasan | 24-T-PBGA (6x8 mm) | 24-T-PBGA (6x8 mm) |
| FBGA Code | RW319 | RW320 |
| Jenis Pemasangan | Surface Mount (BGA reflow) | Surface Mount |
| Addressing | 3-byte / 4-byte extended address | — |
| XIP Support | Yes (execute-in-place) | — |
| Write Protection | Advanced write protection mechanisms | Hardware write protection; Software write protection; Write enable latch |
| AEC-Q100 | Qualified (automotive, -0AUT suffix) | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| SLC Cell Type | SLC NOR | — |
| Access Time | — | 6 ns |
| Automotive Qualification | — | AEC-Q100 qualified |
| Product Longevity Program | — | No |
| Aras MSL | — | [DATA_NEEDED: MSL level] |
| Program/Erase Endurance | — | [DATA_NEEDED: endurance cycles] |
| Data Retention | — | [DATA_NEEDED: retention years] |