MT40A512M16JY-07EAIT:B vs H5AN8G6NAFR-UHC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT40A512M16JY-07EAIT:B disebabkan oleh Micron Technology dan H5AN8G6NAFR-UHC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron
MT40A512M16JY-07EAIT:B ✓ AktifPengandingan Spesifikasi
| Parametr | MT40A512M16JY-07EAIT:B | H5AN8G6NAFR-UHC |
|---|---|---|
| Merek | Micron Technology | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM (CMOS) |
| Saiz Ingatan | 8 Gbit | — |
| Organisasi | 512M x 16 | 512M x 16 |
| Clock Frequency | 1.33 GHz | — |
| Kadar Data | 2666 MT/s | 2400 MT/s |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Voltage | 2.5V, -125mV, +250mV | — |
| Antaramuka | Parallel | — |
| Kemasan | 96-FBGA (8x14) | 96-ball FBGA (TFBGA) |
| Gambaran Suhu Operasi | -40°C to +105°C (AIT grade) | — |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| I/O Type | 1.2V pseudo open-drain | — |
| VREFDQ | On-die, internal, adjustable | — |
| AEC-Q100 | Qualified (AIT suffix) | — |
| RoHS | Compliant | — |
| Memory Density | — | 8 Gbit |
| Tegangan Pemberi Arus | — | 1.2 V |
| Clock Architecture | — | Differential clock (CK_t / CK_c), fully synchronous |
| Jenis Pemasangan | — | Surface Mount |
| Suhu Operasi | — | 0C to +85C |
| Refresh | — | Auto self-refresh |
| Precharge | — | Auto precharge function |
| Reset | — | Asynchronous reset function |
| Data Mask | — | DM function supported |
| Termination | — | Dynamic on-chip termination (ODT) |
| Calibration | — | ZQ calibration function |
| Error Checking | — | CRC function |
| Write Leveling | — | Write leveling function supported |
| Status RoHS | — | [DATA_NEEDED: RoHS status] |