MT40A512M16JY-07EAIT:B vs MT40A512M16TB-062E:J Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT40A512M16JY-07EAIT:B disebabkan oleh Micron Technology dan MT40A512M16TB-062E:J disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron
MT40A512M16JY-07EAIT:B ✓ AktifMicron Technology
MT40A512M16TB-062E:J - 8Gb DDR4 SDRAM 1.6GHz | Micron
MT40A512M16TB-062E:J ✓ AktifPengandingan Spesifikasi
| Parametr | MT40A512M16JY-07EAIT:B | MT40A512M16TB-062E:J |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | SDRAM - DDR4 |
| Saiz Ingatan | 8 Gbit | 8Gbit (512M x 16) |
| Organisasi | 512M x 16 | — |
| Clock Frequency | 1.33 GHz | 1.6 GHz |
| Kadar Data | 2666 MT/s | — |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | 1.2V ±60mV |
| VPP Voltage | 2.5V, -125mV, +250mV | — |
| Antaramuka | Parallel | — |
| Kemasan | 96-FBGA (8x14) | 96-FBGA (7.5x13.5 mm) |
| Gambaran Suhu Operasi | -40°C to +105°C (AIT grade) | 0°C to 95°C |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | 64ms at -40°C to 85°C; 32ms at >85°C to 95°C; 16ms at >95°C |
| I/O Type | 1.2V pseudo open-drain | 1.2V pseudo open-drain |
| VREFDQ | On-die, internal, adjustable | — |
| AEC-Q100 | Qualified (AIT suffix) | — |
| RoHS | Compliant | — |
| Access Time | — | 19 ns |
| VPP Supply Voltage | — | 2.5V (-125mV, +250mV) |
| Internal Banks (x16) | — | 8 (2 groups of 4 banks each) |
| Prefetch Architecture | — | 8n-bit |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Jenis Pemasangan | — | Surface Mount |