MT41K128M16JT-125-ITK vs MT41K128M16JT-125:K Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci MT41K128M16JT-125-ITK disebabkan oleh Micron Technology dan MT41K128M16JT-125:K disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Micron Technology
MT41K128M16JT-125-ITK MT41K128M16JT-125-ITK - 2Gb DDR3L SDRAM 1.35V | Micron

MT41K128M16JT-125-ITK - 2Gb DDR3L SDRAM 1.35V | Micron

MT41K128M16JT-125-ITK ✓ Aktif
Micron Technology
MT41K128M16JT-125:K MT41K128M16JT-125:K - 2Gb DDR3L SDRAM 1600MT/s | Micron Technology

MT41K128M16JT-125:K - 2Gb DDR3L SDRAM 1600MT/s | Micron Technology

MT41K128M16JT-125:K ✓ Aktif

Pengandingan Spesifikasi

Parametr MT41K128M16JT-125-ITK MT41K128M16JT-125:K
Merek Micron Technology Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR3L SDRAM DDR3L SDRAM
Saiz Ingatan 2 Gbit —
Memory Organization 128M x 16 —
Memory Interface Parallel —
Clock Frequency 800 MHz (DDR3L-1600) 800 MHz (1600 MT/s data rate)
Access Time 13.75 ns —
Tegangan Pemberi Arus 1.35 V (1.5 V DDR3-compatible mode supported) —
Suhu Operasi -40C to +95C 0C to +95C
Kemasan 96-FBGA (8x14 mm) 96-FBGA (8x14 mm)
Jenis Pemasangan Surface Mount Surface Mount
Auto Self-Refresh Yes —
Auto Precharge Yes —
Asynchronous Reset Yes Supported
Data Mask Function Yes —
Dynamic On-Chip Termination (ODT) Yes —
ZQ Calibration Yes —
Write Leveling Yes Supported
Status RoHS Compliant Compliant
Memory Capacity — 2 Gbit
Organisasi — 128M x 16
Antaramuka — Parallel
Access Time (Clock Cycle) — 13.75 ns
Supply Voltage (VDD) — 1.35 V (1.283 V to 1.45 V)
Prefetch Architecture — 8n-bit
Self Refresh — Auto self-refresh
Data Mask — Supported
On-Die Termination — Dynamic ODT supported

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