MT41K128M16JT-125K-TR vs MT41K128M16JT-125:K Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci MT41K128M16JT-125K-TR disebabkan oleh Micron Technology dan MT41K128M16JT-125:K disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Micron Technology
MT41K128M16JT-125K-TR MT41K128M16JT-125K-TR - DDR3L 2Gbit 800MHz DRAM | Micron

MT41K128M16JT-125K-TR - DDR3L 2Gbit 800MHz DRAM | Micron

MT41K128M16JT-125K-TR ✓ Aktif
Micron Technology
MT41K128M16JT-125:K MT41K128M16JT-125:K - 2Gb DDR3L SDRAM 1600MT/s | Micron Technology

MT41K128M16JT-125:K - 2Gb DDR3L SDRAM 1600MT/s | Micron Technology

MT41K128M16JT-125:K ✓ Aktif

Pengandingan Spesifikasi

Parametr MT41K128M16JT-125K-TR MT41K128M16JT-125:K
Merek Micron Technology Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR3L SDRAM DDR3L SDRAM
Saiz Ingatan 2 Gbit —
Organisasi 128M x 16 128M x 16
Antaramuka Parallel Parallel
Clock Frequency 800 MHz 800 MHz (1600 MT/s data rate)
Access Time 13.75 ns —
Core Supply Voltage 1.35 V (1.5 V compatible) —
Prefetch Architecture 8n-bit 8n-bit
Kemasan 96-FBGA (8 x 14 mm) 96-FBGA (8x14 mm)
Jenis Pemasangan Surface Mount Surface Mount
Packaging Tape & Reel (TR) —
Technology CMOS DRAM —
Data Rate Class DDR3L-1600 (at 800 MHz clock) —
Suhu Operasi [DATA_NEEDED: Operating Temperature Range] 0C to +95C
Status RoHS [DATA_NEEDED: RoHS Status] Compliant
On-Die Termination (ODT) [DATA_NEEDED: ODT availability] —
Refresh [DATA_NEEDED: Refresh specification] —
Memory Capacity — 2 Gbit
Access Time (Clock Cycle) — 13.75 ns
Supply Voltage (VDD) — 1.35 V (1.283 V to 1.45 V)
Self Refresh — Auto self-refresh
Write Leveling — Supported
Data Mask — Supported
On-Die Termination — Dynamic ODT supported
Asynchronous Reset — Supported

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