MT47H64M16NF-25E vs MT47H32M16NF-25E:H Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci MT47H64M16NF-25E disebabkan oleh Micron Technology dan MT47H32M16NF-25E:H disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Micron Technology
MT47H64M16NF-25E MT47H64M16NF-25E - 1Gb DDR2 SDRAM 400MHz x16 | Micron

MT47H64M16NF-25E - 1Gb DDR2 SDRAM 400MHz x16 | Micron

MT47H64M16NF-25E ✓ Aktif
Micron Technology
MT47H32M16NF-25E:H MT47H32M16NF-25E:H - 512Mb DDR2 SDRAM 400MHz FBGA-84 | Micron

MT47H32M16NF-25E:H - 512Mb DDR2 SDRAM 400MHz FBGA-84 | Micron

MT47H32M16NF-25E:H ✓ Aktif

Pengandingan Spesifikasi

Parametr MT47H64M16NF-25E MT47H32M16NF-25E:H
Merek Micron Technology Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR2 SDRAM DDR2 SDRAM
Saiz Ingatan 1 Gbit —
Organisasi 64M x 16 32M x 16
Memory Interface Parallel —
Clock Frequency 400 MHz 400 MHz
Kadar Data DDR2-800 (400 ps) —
Speed Grade -25E -25E
Number of Banks 8 banks —
Prefetch Architecture 4n-bit —
VDD Supply Voltage 1.8 V +/-0.1 V —
VDDQ Supply Voltage 1.8 V +/-0.1 V —
I/O Interface Standard SSTL_18-compatible (JEDEC 1.8V) —
Ciri-ciri Differential DQS, RDQS duplicate output strobe, DM data mask, auto precharge, dynamic ODT —
Suhu Operasi -40C to +95C (IT: industrial) —
Kemasan 84-FBGA (8 mm x 12.5 mm) 84-FBGA (8 x 12.5 mm)
Jenis Pemasangan Surface Mount (BGA) Surface Mount
Part Status Production —
Density — 512 Mbit
Output Jitter — 400 ps
Tegangan Pemberi Arus — 1.8 V
Antaramuka — Parallel
Operating Temperature (commercial :H variant) — [DATA_NEEDED: operating temperature range]
Operating Temperature (IT variant) — -40C to +95C
On-Die Termination (ODT) — Yes
Auto Precharge — Yes
Data Mask Function — Yes
Status RoHS — Compliant (:H lead-free suffix)
FBGA Code — D9SBV

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