P82B715DG4 vs P82B715DR Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci P82B715DG4 disebabkan oleh Texas Instruments dan P82B715DR disebabkan oleh Texas Instruments. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | P82B715DG4 | P82B715DR |
|---|---|---|
| Merek | Texas Instruments | Texas Instruments |
| Kategori | Interface ICs | Interface ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Channel Count | 2 bits | — |
| Bus Type | I2C/SMBus | — |
| Device Type | Bidirectional buffer and cable extender | — |
| Operating Supply Voltage Range | 3 V to 12 V | 3 V to 12 V |
| Maximum I2C Bus Frequency | 400 kHz | — |
| Delay Time | 250 ns | 250 ns |
| Arus Pemberi Arus | 22 mA | 22 mA |
| Data Direction | Bidirectional | — |
| Main I2C Bus Capacitance | 400 pF | — |
| Transmission Bus Wiring Capacitance | 3 nF | — |
| Signal Amplification Method | Unidirectional analog current amplification | — |
| Supported Bus Speed | 400-kHz I2C bus | — |
| Kemasan | 8-SOIC, 0.154 inch (3.90 mm) width | 8-SOIC, 0.154 inch body width, 3.90 mm width |
| Jenis Pemasangan | Surface mount | Surface mount |
| Logic Level | I2C-compatible open-drain signaling | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| REACH Status | [DATA_NEEDED: REACH status] | — |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification] | — |
| Gambaran Suhu Operasi | [DATA_NEEDED: operating temperature range] | — |
| Product Type | — | 2-bit bidirectional I2C/SMBus buffer and cable extender |
| Maximum Bus Frequency | — | 400 kHz |
| Bidirectional Channels | — | 2 channels |
| Bus Wiring Capacitance | — | 3 nF |
| Main-Bus Capacitance | — | 400 pF conventional I2C specification limit |
| Kapasitansi Masukan | — | 3000 pF |
| Suhu Operasi | — | -40 C to +85 C |
| Architecture | — | Bipolar IC with unidirectional analog current amplification |
| Driver Compatibility | — | Compatible with TTL-level drivers |
| ESD Robustness | — | +/-2500 V HBM |
| Latch-Up Immunity | — | Greater than 100 mA |
| MSL | — | MSL Level-1-260C-UNLIM |