RTAX1000SL-1CGS624B vs RTAX1000S-1LG624V Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci RTAX1000SL-1CGS624B disebabkan oleh Microchip Technology dan RTAX1000S-1LG624V disebabkan oleh Microchip Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Microchip Technology
RTAX1000SL-1CGS624B - Rad-Tolerant FPGA 1M Gates | Microchip
RTAX1000SL-1CGS624B ✓ AktifMicrochip Technology
RTAX1000S-1LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000S-1LG624V ✓ AktifPengandingan Spesifikasi
| Parametr | RTAX1000SL-1CGS624B | RTAX1000S-1LG624V |
|---|---|---|
| Merek | Microchip Technology | Microchip Technology |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | Aktif |
| Logic Density | 1,000,000 equivalent system gates | — |
| ASIC Gates | 125,000 additional ASIC gates | — |
| Configurable Logic Blocks (CLBs) | 12096 | — |
| Family | RTAX-S/SL Radiation-Tolerant FPGA | — |
| Series | RTAX1000SL | — |
| Speed Grade | -1 | -1 |
| Technology | Digital CMOS | CMOS antifuse (one-time programmable) |
| Programming Technology | Anti-fuse (one-time programmable, live at power-up) | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits SRAM with optional EDAC |
| Kemasan | 624-ball Ceramic CGA (CGS624) | LG624 (624-ball ceramic column grid array) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Radiation Tolerance | Radiation-tolerant (space flight qualified) | — |
| Qualification | DLA SMD 5962-0422006QUA per MIL-PRF-38535 | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Tegangan Pemberi Arus | [DATA_NEEDED: core/IO supply voltage] | — |
| Maximum User I/O | [DATA_NEEDED: maximum user I/O count] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Architecture Base | Derived from Microsemi commercial Axcelerator family | — |
| Equivalent System Gates | — | 1000000 |
| Logic Cells | — | 18144 |
| CLBs | — | 12096 |
| Maximum User I/Os | — | 418 |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose (Parametric) | — | 200 krad (Si) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Combinatorial Delay (max) | — | 0.93 ns |
| Configuration | — | Nonvolatile, live at power-up, single chip |
| Radiation Tolerance Class | — | Rad-tolerant (space flight) |
| Architecture Family | — | RTAX-S (based on Axcelerator) |
| Screening | — | [DATA_NEEDED: screening flow per order code suffix] |
| Supply Voltage (Core) | — | [DATA_NEEDED: core supply voltage] |