RTAX4000D-CQ352V vs RTAX2000D-1CQ352V Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci RTAX4000D-CQ352V disebabkan oleh Microchip Technology dan RTAX2000D-1CQ352V disebabkan oleh Microchip Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Microchip Technology
RTAX4000D-CQ352V - 4M-Gate Rad-Tolerant FPGA | Microchip Technology
RTAX4000D-CQ352V ✓ AktifMicrochip Technology
RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000D-1CQ352V ✓ AktifPengandingan Spesifikasi
| Parametr | RTAX4000D-CQ352V | RTAX2000D-1CQ352V |
|---|---|---|
| Merek | Microchip Technology | Microchip Technology |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | Aktif |
| Equivalent System Gates | 4,000,000 gates | — |
| Logic Cells | 55,440 | 29,568 |
| CLB Organization | 36,960 CLBs | — |
| Number of User I/Os | 166 | — |
| Technology | Digital, CMOS | Digital CMOS, antifuse (nonvolatile) |
| Programmability Type | Antifuse (OTP), live at power-up | — |
| Family | RTAX-S/SL and RTAX-DSP radiation-tolerant FPGAs | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits with optional EDAC protection |
| Clocking | Segmentable clocks, chip-wide highway routing | — |
| Operating Temperature Min | -55 C | — |
| Operating Temperature Max | +125 C | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kemasan | CQ352 ceramic column grid array | CQFP-352 (CQ352), ceramic |
| Application Domain | Space flight systems (radiation-tolerant) | — |
| Radiation Tolerance | [DATA_NEEDED: TID and SEE ratings] | — |
| Core Supply Voltage | [DATA_NEEDED: core voltage] | 1.425 V to 1.575 V (nominal 1.5 V) |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS Status] |
| Equivalent Gates | — | 2,000,000 |
| CLBs | — | 19,712 |
| DSP Mathblocks | — | Up to 120 |
| DSP MAC Performance | — | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose | — | 200 krad (Si) |
| Configuration | — | Live at power-up, single-chip, no external configuration device |
| Speed Grade | — | -1 |
| Screening | — | RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test) |
| Suhu Operasi | — | [DATA_NEEDED: Operating Temperature] |