1N6263W-7-F - 60V 15mA Schottky Diode SOD-123 | Diodes Inc.
MPN: 1N6263W-7-F β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.14 | $0.14 |
| 10 | $0.1 | $1.00 |
| 100 | $0.062 | $6.20 |
| 500 | $0.041 | $20.50 |
| 1,000 | $0.028 | $28.00 |
| 3,000 | $0.021 | $63.00 |
Drop-in alternatives for 1N6263W-7-F β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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1N6263W-7
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View Datasheet β1N6262W-7-F
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
1N6263W-7-F Maximum Ratings & Electrical Characteristics
| Diode Type | Schottky Barrier |
| DC Reverse Voltage (VR) | 60 V |
| Average Rectified Output Current (IO) | 15 mA |
| Forward Voltage (VF) Max | 1 V @ 15 mA |
| Reverse Recovery Time (trr) | 1 ns |
| Power Dissipation | 250 mW |
| Configuration | Single diode |
| Package | SOD-123 (2-pin) |
| Mounting Type | Surface Mount |
| Protection Feature | Guard ring construction for transient protection |
| Switching Speed Class | Fast switching |
| Packaging | Tape and Reel (T/R) |
| RoHS Status | Compliant (F suffix indicates lead-free/RoHS) |
| SPICE Model Availability | Yes (1N6263W.spice.txt from Diodes Incorporated) |
1N6263W-7-F Pin Configuration
| Pin 1 | Cathode β Cathode terminal, marked by the bar on package top |
| Pin 2 | Anode β Anode terminal |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
1N6263W-7-F is suitable for 6 applications: RF Signal Detection and Envelope Detection, Reverse Polarity Protection in Low-Current Lines, High-Speed Logic and Timing Clamping, Freewheeling in Low-Power Switching Circuits, OR-ing and Steering of Backup Supplies, Test and Measurement Instrument Front Ends.
RF Signal Detection and Envelope Detection
The 1N6263W-7-F is well suited to RF envelope detection because its Schottky junction conducts via majority carriers, eliminating minority-carrier storage time, and its specified 1 ns reverse recovery time supports detection well into the hundreds of megahertz. In a typical detector circuit the diode rectifies the RF carrier into an RC load, with the guard ring construction providing transient robustness against antenna-borne surges. The 15 mA current rating comfortably covers small-signal detection duty, and the 60 V rating gives margin on higher-amplitude front ends. Place the diode directly at the detector node with a short ground return; its surface-mount SOD-123 package minimizes parasitic inductance compared with through-hole DO-35 parts, preserving detector sensitivity at high frequency.
Recommended
Reverse Polarity Protection in Low-Current Lines
For sensor lines, battery-backed memory rails, and signal inputs that can see reversed connections, the 1N6263W-7-F provides series reverse blocking with a 60 V rating - far above common 12 V and 24 V industrial rails. At typical sensor currents of a few milliamperes, the forward conduction loss is modest even with the 1 V maximum forward voltage at 15 mA. Place the diode in series with the supply input and size the downstream bulk capacitor to ride through the diode drop; the fast Schottky also clamps inductive kickback. Compared with a P-N diode, the lack of reverse recovery matters little in static blocking but helps when the line is switched rapidly. Verify leakage at maximum ambient, since Schottky reverse leakage rises steeply with temperature.
Recommended
High-Speed Logic and Timing Clamping
Where digital or timing nodes require clamping without adding storage-time delay, the 1N6263W-7-F works as a fast steering or clamp diode: the 1 ns reverse recovery means it stops conducting essentially the instant the node swings back, preserving edge timing. Guard ring construction protects against ESD-class transients at connectors. The 60 V rating allows clamping on 24-48 V industrial signal buses. Note the trade-off: the 1 V forward drop at 15 mA is higher than silicon P-N clamps at low current would suggest, so in low-voltage logic (3.3 V rails) the clamp begins conducting around 0.3-0.4 V above rail. Keep clamp currents within 15 mA and add series resistance to bound fault currents.
Recommended
Freewheeling in Low-Power Switching Circuits
In low-current switching converters, relay drivers, and solenoid drivers carrying up to 15 mA, the 1N6263W-7-F serves as a freewheeling diode that recovers inductive energy without reverse-recovery spikes polluting the switch node. The 1 ns recovery and Schottky conduction produce clean turn-off transitions, useful where switching frequencies reach hundreds of kilohertz and P-N diode storage time would erode efficiency. The 60 V rating covers 24 V and 48 V rails with margin. Because dissipation is bounded at 250 mW, compute freewheel loss as I x VF and verify the SOD-123 thermal environment; at low duty-cycle flyback currents the part runs cool. For inductive loads above roughly 20 mA, upgrade to a 1 A-class power Schottky.
Recommended
OR-ing and Steering of Backup Supplies
For diode-ORing small backup cells, supercapacitors, or auxiliary supplies into a low-current rail, the 1N6263W-7-F blocks reverse discharge with 60 V of margin and conducts forward with predictable loss. At standby currents of a few milliamperes, the forward drop (well below the 1 V maximum at 15 mA) limits rail sag. The SOD-123 footprint suits compact battery-backup layouts on memory modules and RTC boards. The key design check is reverse leakage of the blocked diode draining the backup source: measure leakage at the maximum expected temperature, since hot Schottky leakage can be orders of magnitude above the 25 C figure and may unbalance multi-diode OR-ing schemes over time.
Recommended
Test and Measurement Instrument Front Ends
Bench instruments, probes, and signal-conditioning inputs benefit from the 1N6263W-7-F as an input protection and detection element: its 60 V reverse rating withstands common overrange events on Β±24 V and 48 V signal domains, the 1 ns recovery keeps instruments honest at speed, and the guard ring adds surge robustness. In peak-detector and sample-hold subcircuits, the Schottky low storage charge prevents held-voltage droop from diode re-conduction. The main caution is leakage in high-impedance measurement paths - a hot Schottky can leak nanoamperes, which on a 1 Mohm node shifts readings. For femtoampere-class electrometer inputs, specify a lower-leakage P-N or JFET-protected topology instead.
Recommended
Recommended Products Summary
Engineering reference data for 1N6263W-7-F β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 1N6263W-7 | 1N6262W-7-F |
|---|---|---|---|
| Package | SOD-123 | SOD-123 - same | SOD-123 - same |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Reverse Voltage (VR) | 60 V | 60 V | [DATA_NEEDED] |
| Average Rectified Current (IO) | 15 mA | 15 mA | [DATA_NEEDED] |
| Forward Voltage (VF) | 1 V @ 15 mA | 1 V @ 15 mA | [DATA_NEEDED] |
| Reverse Recovery Time (trr) | 1 ns | 1 ns | [DATA_NEEDED] |
| Power Dissipation | 250 mW | 250 mW | [DATA_NEEDED] |
| RoHS / Lead-Free | Yes (-F suffix) | Standard designation | Yes (-F suffix) |
Key Differentiators
- 60 V rating in SOD-123 small-signal class (vs 1N6262W-7-F)
- 1 ns reverse recovery with zero storage charge (vs 1N4148W)
- Guard ring transient protection (vs Generic unguarded SOD-123 Schottky diodes)
Design Notes
Respect the 15 mA average rectified current and 250 mW dissipation limits. At full 15 mA with the 1 V maximum forward voltage, dissipation is approximately 15 mW - estimated from IO x VF - which is safe in free air but leaves less headroom at elevated ambient. The most common failure mode is not steady overcurrent but transient abuse; the guard ring helps, but series resistance upstream of the diode in clamp applications should bound fault current. Do not substitute a lower-voltage Schottky without checking your worst-case rail transients against the 60 V rating.
Schottky reverse leakage roughly doubles every 10 C. In leakage-sensitive roles - OR-ing, peak detectors, charge holding - evaluate the 1N6263W-7-F at your maximum ambient plus self-heating, not at 25 C. If hot leakage is unacceptable in the same footprint, the SOD-123 1N4148W fast P-N diode is a BOM-only swap (no layout change) offering orders-of-magnitude lower leakage at the cost of reverse recovery. Always derate the 250 mW rating per the datasheet derating curve above 25 C ambient.
Use the standard SOD-123 land pattern from the Diodes Incorporated outline drawing and place the diode close to the node it protects or detects. In RF detection duty, keep the cathode-side loop (diode to load capacitor to ground) short and direct to minimize series inductance, which otherwise limits high-frequency response. In clamp duty, route the clamp path away from sensitive signal traces so transient current does not couple into adjacent nets. The exposed polarity bar marks the cathode (pin 1); verify orientation in pick-and-place data to avoid reverse-mounted clamps.
Compliance Information
The -F suffix denotes the lead-free/RoHS green version per Diodes Incorporated designation; the manufacturer publishes material declaration (MDS) report 1N6263W-Green-DC-0832. REACH and conflict-minerals status not stated in provided data.
