1N6263 - 60V 15mA Schottky Diode DO-35 | STMicroelectronics
MPN: 1N6263 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.45 | $0.45 |
| 10 | $0.36 | $3.60 |
| 100 | $0.24 | $24.00 |
| 500 | $0.18 | $90.00 |
| 1,000 | $0.14 | $140.00 |
Drop-in alternatives for 1N6263 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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1N6263
✅ Drop-In✓ In Stock
$0.14 / Unit
View Datasheet →1N6263
✅ Drop-In✓ In Stock
$0.14 / Unit
View Datasheet →1N5711
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$0.18 / Unit
View Datasheet →1N6263W-7-F
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$0.021 / Unit
View Datasheet →1N6263 Maximum Ratings & Electrical Characteristics
| Diode Type | Small-signal Schottky (metal-to-silicon junction) |
| Reverse Voltage (VR) | 60 V |
| Forward Current | 15 mA |
| Reverse Recovery | Ultrafast (Schottky, no stored charge) |
| Structure | Guard-ring protected Schottky barrier |
| Application Class | High-level UHF/VHF detection, pulse applications, broad dynamic range |
| Package | DO-35 (DO-204AH) axial glass, through hole |
| Mounting Type | Through Hole |
| Configuration | Single diode |
| Typical Application Domain | UHF/VHF detector, MOS device protection, steering/biasing |
| Manufacturer | STMicroelectronics |
1N6263 Pin Configuration
| Pin 1 | Anode — Positive terminal; current flows into this pin when forward biased |
| Pin 2 | Cathode — Marked by the band on the DO-35 glass body |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
1N6263 is suitable for 6 applications: UHF/VHF Signal Detection, MOS Device Gate Protection, Fast Pulse Clipping and Clamping, Logarithmic and Video Detectors, General-Purpose Switching and Steering, Instrumentation and Test Equipment.
UHF/VHF Signal Detection
The 1N6263 was designed specifically for high-level UHF/VHF detection. Its metal-to-silicon Schottky barrier provides a low turn-on voltage, so a larger portion of the RF envelope is rectified, extending dynamic range at the detector output. Because the junction stores no minority carriers, switching speed is limited only by junction capacitance, preserving rectification efficiency at VHF and UHF frequencies where PN junction diodes such as the 1N4148 degrade. In a typical envelope detector, the 1N6263 sits directly at the tuned-circuit node driving an RC load; the 60 V rating provides ample margin for high-level signals before significant voltage levels appear at the detector input.
Recommended
MOS Device Gate Protection
The low forward voltage drop of the 1N6263 makes it ideal for clamping and steering circuits that protect MOS devices. Schottky diodes turn on before the protected gate oxide sees excessive voltage, and their zero reverse recovery ensures the clamp acts within picoseconds of a transient arriving, which matters for fast pulses on MOSFET gates or CMOS inputs. The 60 V reverse rating gives headroom on higher-voltage rails, while the guard-ring structure stabilizes reverse leakage over temperature. Place the diode directly across the node being protected with short leads, since the through-hole DO-35 package adds a small amount of series inductance that can slightly slow the clamp at very fast edges.
Recommended
Fast Pulse Clipping and Clamping
In pulse instrumentation, the 1N6263 serves as a clipper or clamp for fast edges. The ultrafast Schottky action adds no storage-delay tail to the recovered signal, so pulse shapes remain faithful after clamping, and the broad dynamic range allows both small and large pulses to be handled by the same network. The 15 mA average current limit is generally sufficient for small-signal pulse streams; designers should confirm duty-cycle-limited average current stays below this figure. The DO-35 glass body offers good long-term stability, and the axial leads simplify breadboarding and point-to-point wiring in prototypes and test fixtures.
Recommended
Logarithmic and Video Detectors
Schottky diodes exhibit an exponential current-voltage characteristic over many decades of current, which the 1N6263 exploits in log detector and video-detection circuits. The low turn-on voltage permits detection of weak signals without external bias, while the high 60 V breakdown accommodates large signal excursions without clamping the peak. In successive-detection log video amplifiers, a 1N6263 at each detector stage sums the outputs across a wide dynamic range. The guard-ring structure keeps reverse leakage low and predictable, which is important because leakage appears as an offset error in the log transfer function and drifts with temperature if the junction is poorly protected.
Recommended
General-Purpose Switching and Steering
As a general-purpose small-signal switch, the 1N6263 steers logic-level currents, biases circuit nodes, and ORs supply or signal paths with minimal forward drop. Its fast switching means it does not slow the signals it steers, a real advantage over the 1N4148 in sub-microsecond timing circuits where reverse recovery of a PN diode adds charge-tail errors. The 60 V rating permits use on industrial signal rails well above the 20 to 30 V limit of many small Schottky diodes. Designers must respect the 15 mA current ceiling and account for higher reverse leakage compared to PN junction diodes, especially above room temperature.
Recommended
Instrumentation and Test Equipment
Bench instruments, RF wattmeters, SWR bridges, and service-grade signal probes frequently use the 1N6263 as the rectifying element because it is inexpensive, widely second-sourced by Vishay, onsemi, and others, and available in the repair-friendly DO-35 axial package. The low forward drop lets a simple diode-and-meter circuit read accurately at millivolt-level RF inputs, and the 60 V rating survives accidental connection to higher-level nodes. Through-hole construction tolerates repeated rework in lab prototypes, and identical second-source parts eliminate qualification effort when replenishing stock, since all 1N6263-branded devices share the same JEDEC specification.
Recommended
Recommended Products Summary
Engineering reference data for 1N6263 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 1N6263 (Vishay) | 1N6263 (onsemi) | 1N5711 | 1N6263W-7-F |
|---|---|---|---|---|---|
| Package | DO-35 axial | DO-35 axial - same | DO-35 axial - same | DO-35 axial - same | SOD-123 (SMD) |
| Brand | STMicroelectronics | Vishay Intertechnology | onsemi | onsemi | Diodes Incorporated |
| Reverse Voltage (VR) | 60 V | 60 V | 60 V | 70 V | [DATA_NEEDED] |
| Forward Current | 15 mA | 15 mA | 15 mA | 15 mA class | [DATA_NEEDED] |
| Diode Technology | Schottky with guard ring | Schottky | Schottky | Schottky detector | Schottky |
| Switching Speed | Ultrafast (Schottky) | Ultrafast | Ultrafast | Ultrafast (RF detector) | Ultrafast |
| Primary Application | UHF/VHF detection, pulses | UHF/VHF detection, pulses | UHF/VHF detection, pulses | RF detector | General-purpose Schottky, SMD |
| Mounting | Through Hole | Through Hole | Through Hole | Through Hole | Surface Mount |
Key Differentiators
- Lowest turn-on voltage for maximum detection sensitivity (vs 1N5711)
- 60 V reverse rating in a small-signal Schottky (vs 1N6263W-7-F)
- Multi-source availability under one JEDEC number (vs 1N5711)
Design Notes
Respect the 15 mA average forward current limit. The 1N6263 is a detector-class device, not a rectifier; using it in power supply duty will overheat the small DO-35 glass body. Also remember that Schottky reverse leakage is much higher than that of a 1N4148 and roughly doubles every 10 C, so high-impedance detector circuits can show drift as the ambient temperature rises. If leakage-driven offset is critical, either add a guard layout around the cathode node or evaluate a PN junction diode at the cost of switching speed.
Keep detector connections short. Although the DO-35 package is compact, axial leads add several nanohenries of series inductance each; in UHF detector or clamp service, trim leads to a few millimeters and mount the diode directly at the signal node. For RF envelope detectors, choose an RC load time constant that is long compared to the RF period but short compared to the modulation envelope, or high-level signals will charge the junction capacitance and distort the detected output.
For through-hole assemblies, orient the cathode band consistently and confirm polarity before soldering, since reversed detector diodes shift the output by the full signal amplitude. The DO-35 glass body tolerates standard wave and hand soldering, but avoid stressing the lead-glass seal with excessive bend force close to the body. If migrating to surface mount, the 1N6263W-7-F in SOD-123 provides the equivalent function on an SMD land pattern, eliminating axial holes and reducing parasitic inductance.
Compliance Information
Compliance status not stated in the provided web data; verify against the STMicroelectronics 1N6263 datasheet and product page before design-in.