2SC5226A-4-TL-E - 7 GHz 70 mA RF NPN | onsemi
MPN: 2SC5226A-4-TL-E ✓ Active| Qty | Unit Price | Extended |
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| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
2SC5226A-4-TL-E Overview
An RF bipolar junction transistor, or RF BJT, is a three-terminal semiconductor device using collector-base and emitter-base junctions to provide current gain and signal amplification at radio frequencies. The 2SC5226A-4 family is positioned for low-noise RF amplification, where transistor noise figure, gain, transition frequency, bias stability, and impedance matching determine system performance.
The verified data identifies a typical noise figure of 1.0 dB at 1 GHz and a typical small-signal gain parameter S21e of 12 dB at 1 GHz. The transition frequency is listed as 7 GHz, providing useful bandwidth for VHF and UHF circuits. The collector-to-base maximum voltage is listed as 20 V, while collector-to-emitter and emitter-to-base limits remain available in the referenced manufacturer datasheet.
The 2SC5226A-4-TL-E is a single NPN transistor in an MCP3 or SOT-323-style three-pin surface-mount package. The -4 suffix identifies the particular ordering variant, while -TL-E identifies the supplied packaging and orderable configuration. Tape-and-reel packaging is referenced by the manufacturer documentation.
Typical applications include low-noise amplifiers, RF signal-chain blocks, VHF and UHF communication circuits, and wideband amplifier front ends. In these applications, the 1.0 dB typical noise figure at 1 GHz can support low-noise signal amplification, while the 12 dB typical gain parameter at 1 GHz provides a defined starting point for bias and matching design.
When designing around this transistor, preserve the manufacturer-recommended emitter, base, and collector pin orientation and confirm the package drawing for the exact orderable variant. Biasing must remain within the absolute maximum ratings, and RF layout should use short interconnects, controlled ground return paths, and impedance-controlled transmission lines. The available verified data does not provide a complete price table, operating-temperature range, or all electrical characteristics.
This product page combines the verified onsemi and distributor references with package, application, comparison, and design guidance. It is intended to help engineers identify the correct RF transistor and distinguish verified electrical facts from parameters that require confirmation in the manufacturer datasheet.
Drop-in alternatives for 2SC5226A-4-TL-E — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
2SC5226A-5-TL-E
✅ Drop-In📋 Reference alternative (not in catalog)
2SC5226A
✅ Drop-In📋 Reference alternative (not in catalog)
2SC5226A-4-TL-E Maximum Ratings & Electrical Characteristics
| Device Type | NPN RF bipolar junction transistor |
| Collector Current Maximum | 70 mA |
| Collector-Emitter Voltage Maximum | 10 V |
| Collector-Base Voltage Maximum | 20 V |
| Transition Frequency | 7 GHz typical |
| Noise Figure | 1.0 dB typical at 1 GHz |
| Small-Signal Gain S21e | 12 dB typical at 1 GHz |
| Collector Power Dissipation | 150 mW |
| Transistor Polarity | NPN |
| Material | Silicon |
| Package | SC-70 / MCP3 surface-mount |
| Package Pin Count | 3 pins |
| Mounting Type | Surface mount |
| Application Category | VHF-to-UHF wide-band low-noise amplifier |
| Frequency Application | VHF to UHF |
| Manufacturer | onsemi |
2SC5226A-4-TL-E 3 pins Pin Configuration Guide
Pin configuration for 2SC5226A-4-TL-E (3 pins package). This power device features gate, drain, and source terminals. For non-polarized packages, refer to the manufacturer datasheet for exact pin 1 orientation and footprint details. Common applications include power supply design, motor driving, and load switching.
No detailed pinout data available for 2SC5226A-4-TL-E.
Refer to the datasheet for full pin configuration.
Typical Applications
2SC5226A-4-TL-E is suitable for 6 applications: 1 GHz VHF/UHF Low-Noise Amplifier, VHF-to-UHF Wideband RF Amplifier, RF Receiver Front End, RF Signal-Chain Gain Stage, RF Amplifier Bias and Matching Platform, Portable RF Communication Module.
1 GHz VHF/UHF Low-Noise Amplifier
The 2SC5226A-4-TL-E fits a 1 GHz low-noise amplifier front end because the verified data specifies a 1.0 dB typical noise figure and 12 dB typical S21e at 1 GHz. Place the NPN transistor in a properly biased common-emitter or emitter-degenerated stage, then use impedance-matching networks to transform the source and load impedances. The 7 GHz transition frequency provides margin above the 1 GHz operating point, while the 70 mA current limit and 150 mW dissipation rating require conservative bias design.
Recommended
VHF-to-UHF Wideband RF Amplifier
The 2SC5226A-4-TL-E is labeled for VHF-to-UHF wideband low-noise amplifier applications, making it suitable for multi-band RF signal-chain stages near the upper VHF or lower UHF region. Its 7 GHz typical transition frequency exceeds the target operating band, while the 12 dB typical gain parameter at 1 GHz provides a useful reference for matching and gain budgeting. The amplifier must still be evaluated for bandwidth, stability, output compression, and impedance variation over the full intended frequency range.
Recommended
RF Receiver Front End
In an RF receiver front end, the 2SC5226A-4-TL-E can serve as a low-noise gain stage ahead of a mixer or additional filtering. The verified 1.0 dB typical noise figure at 1 GHz is the key selection criterion because receiver sensitivity depends on the noise contribution of the first active stage. Use controlled source impedance, emitter-bypass impedance, and short RF traces to preserve the noise behavior. Confirm input compression, bias stability, and available gain in the complete receiver design.
Recommended
RF Signal-Chain Gain Stage
The 2SC5226A-4-TL-E can be used as a compact RF gain stage in communication and instrumentation signal chains. Its 10 V collector-emitter rating, 70 mA maximum collector current, and 150 mW power dissipation define the basic design envelope, while the 7 GHz typical transition frequency supports high-frequency operation. A practical implementation should use a defined bias network, emitter degeneration where needed, controlled terminations, and a PCB layout that minimizes parasitic inductance and maintains predictable impedance.
Recommended
RF Amplifier Bias and Matching Platform
The 2SC5226A-4-TL-E is useful in a small RF amplifier evaluation platform because its documented 1.0 dB typical noise figure at 1 GHz and 12 dB typical S21e provide measurable starting points. Engineers can characterize DC operating points, input and output return loss, gain, noise figure, and stability across frequency using controlled test fixtures. The 150 mW dissipation rating makes thermal monitoring important, and the 70 mA collector-current ceiling should be enforced during bias sweeps.
Recommended
Portable RF Communication Module
The 2SC5226A-4-TL-E can be considered for compact portable RF communication modules that require an NPN low-noise amplifier device in a small surface-mount package. Its 10 V rating and 70 mA current capability suit low-power RF stages, while the 7 GHz typical transition frequency offers operating margin for VHF/UHF designs. Package size alone does not guarantee RF performance; the board must provide controlled ground geometry, stable bias, adequate decoupling, and tuned impedance paths, with thermal conditions checked for the final enclosure.
Recommended
Recommended Products Summary
Engineering reference data for 2SC5226A-4-TL-E — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 2SC5226A-5-TL-E | 2SC5226A |
|---|---|---|---|
| Brand | onsemi | onsemi | onsemi |
| Package | SC-70 / MCP3 | SC-70 / MCP3 | SC-70 / MCP3 |
| Device Type | NPN RF BJT | 2SC5226A RF transistor family | NPN RF transistor |
Key Differentiators
- Verified 1.0 dB typical noise figure at 1 GHz (vs 2SC5226A)
- Verified 12 dB typical S21e gain at 1 GHz (vs 2SC5226A)
- 7 GHz typical transition frequency (vs 2SC5226A-5-TL-E)
Design Notes
Keep the transistor leads and surrounding RF network short, especially the emitter return and collector load connections. Use a continuous ground plane where practical, minimize via inductance, and place bypass capacitors close to the bias network. The SC-70/MCP3 package is compact, but package size does not compensate for long traces or poor grounding; layout parasitics can materially alter gain, noise figure, and stability near 1 GHz.
Do not assume that any transistor with a similar 7 GHz rating is a drop-in replacement. Verify the exact three-terminal pinout, package drawing, collector-emitter voltage rating, collector-current limit, and DC gain. The supplied data identifies the target as a 10 V, 70 mA NPN device, while several required alternative parameters are not provided. Confirm the manufacturer datasheet and perform a schematic, footprint, and RF-performance review before substitution.
Estimated design constraint: using the verified 150 mW collector power-dissipation value as the initial envelope, do not design the stage to continuously operate at that limit without checking the onsemi thermal ratings and ambient temperature. Estimated dissipated power is P = VCE × IC, so a 10 V collector-emitter condition at 70 mA would calculate to 700 mW, which exceeds the listed 150 mW device rating and must not be used as a normal operating point without manufacturer-approved derating and thermal analysis.
Compliance Information
The supplied verified data does not state RoHS, REACH, AEC-Q100, lead-free, halogen-free, or conflict-minerals status for the exact orderable MPN. Compliance must be confirmed from current onsemi regulatory documentation.
