2SC5226A-4-TL-E - 7 GHz 70 mA RF NPN | onsemi
料号： 2SC5226A-4-TL-E ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
2SC5226A-4-TL-E 概述
An RF bipolar junction transistor, or RF BJT, is a three-terminal semiconductor device using collector-base and emitter-base junctions to provide current gain and signal amplification at radio frequencies. The 2SC5226A-4 family is positioned for low-noise RF amplification, where transistor noise figure, gain, transition frequency, bias stability, and impedance matching determine system performance.
The verified data identifies a typical noise figure of 1.0 dB at 1 GHz and a typical small-signal gain parameter S21e of 12 dB at 1 GHz. The transition frequency is listed as 7 GHz, providing useful bandwidth for VHF and UHF circuits. The collector-to-base maximum voltage is listed as 20 V, while collector-to-emitter and emitter-to-base limits remain available in the referenced manufacturer datasheet.
The 2SC5226A-4-TL-E is a single NPN transistor in an MCP3 or SOT-323-style three-pin surface-mount package. The -4 suffix identifies the particular ordering variant, while -TL-E identifies the supplied packaging and orderable configuration. Tape-and-reel packaging is referenced by the manufacturer documentation.
Typical applications include low-noise amplifiers, RF signal-chain blocks, VHF and UHF communication circuits, and wideband amplifier front ends. In these applications, the 1.0 dB typical noise figure at 1 GHz can support low-noise signal amplification, while the 12 dB typical gain parameter at 1 GHz provides a defined starting point for bias and matching design.
When designing around this transistor, preserve the manufacturer-recommended emitter, base, and collector pin orientation and confirm the package drawing for the exact orderable variant. Biasing must remain within the absolute maximum ratings, and RF layout should use short interconnects, controlled ground return paths, and impedance-controlled transmission lines. The available verified data does not provide a complete price table, operating-temperature range, or all electrical characteristics.
This product page combines the verified onsemi and distributor references with package, application, comparison, and design guidance. It is intended to help engineers identify the correct RF transistor and distinguish verified electrical facts from parameters that require confirmation in the manufacturer datasheet.
直接替换替代料： 2SC5226A-4-TL-E ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
2SC5226A-5-TL-E
✅ 直接替换📋 参考替代料（不在目录中）
2SC5226A
✅ 直接替换📋 参考替代料（不在目录中）
2SC5226A-4-TL-E 最大额定值与电气特性
| Device Type | NPN RF bipolar junction transistor |
| Collector Current Maximum | 70 mA |
| Collector-Emitter Voltage Maximum | 10 V |
| Collector-Base Voltage Maximum | 20 V |
| Transition Frequency | 7 GHz typical |
| Noise Figure | 1.0 dB typical at 1 GHz |
| Small-Signal Gain S21e | 12 dB typical at 1 GHz |
| Collector Power Dissipation | 150 mW |
| Transistor Polarity | NPN |
| Material | Silicon |
| 封装 | SC-70 / MCP3 surface-mount |
| Package Pin Count | 3 pins |
| 安装类型 | Surface mount |
| Application Category | VHF-to-UHF wide-band low-noise amplifier |
| Frequency Application | VHF to UHF |
| Manufacturer | onsemi |
2SC5226A-4-TL-E 3 pins 引脚配置指南
2SC5226A-4-TL-E（3 pins 封装）的引脚配置。 该功率器件具有栅极、漏极和源极端子。对于无极性封装，请参阅制造商数据手册以了解确切的引脚 1 方向和封装尺寸细节。常见应用包括电源设计、电机驱动和负载开关。
暂无详细引脚数据： 2SC5226A-4-TL-E.
请参阅 数据手册 以查看完整引脚配置。
典型应用
2SC5226A-4-TL-E 适用于 6 应用s: 1 GHz VHF/UHF Low-Noise Amplifier, VHF-to-UHF Wideband RF Amplifier, RF Receiver Front End, RF Signal-Chain Gain Stage, RF Amplifier Bias and Matching Platform, Portable RF Communication Module.
1 GHz VHF/UHF Low-Noise Amplifier
The 2SC5226A-4-TL-E fits a 1 GHz low-noise amplifier front end because the verified data specifies a 1.0 dB typical noise figure and 12 dB typical S21e at 1 GHz. Place the NPN transistor in a properly biased common-emitter or emitter-degenerated stage, then use impedance-matching networks to transform the source and load impedances. The 7 GHz transition frequency provides margin above the 1 GHz operating point, while the 70 mA current limit and 150 mW dissipation rating require conservative bias design.
推荐
VHF-to-UHF Wideband RF Amplifier
The 2SC5226A-4-TL-E is labeled for VHF-to-UHF wideband low-noise amplifier applications, making it suitable for multi-band RF signal-chain stages near the upper VHF or lower UHF region. Its 7 GHz typical transition frequency exceeds the target operating band, while the 12 dB typical gain parameter at 1 GHz provides a useful reference for matching and gain budgeting. The amplifier must still be evaluated for bandwidth, stability, output compression, and impedance variation over the full intended frequency range.
推荐
RF Receiver Front End
In an RF receiver front end, the 2SC5226A-4-TL-E can serve as a low-noise gain stage ahead of a mixer or additional filtering. The verified 1.0 dB typical noise figure at 1 GHz is the key selection criterion because receiver sensitivity depends on the noise contribution of the first active stage. Use controlled source impedance, emitter-bypass impedance, and short RF traces to preserve the noise behavior. Confirm input compression, bias stability, and available gain in the complete receiver design.
推荐
RF Signal-Chain Gain Stage
The 2SC5226A-4-TL-E can be used as a compact RF gain stage in communication and instrumentation signal chains. Its 10 V collector-emitter rating, 70 mA maximum collector current, and 150 mW power dissipation define the basic design envelope, while the 7 GHz typical transition frequency supports high-frequency operation. A practical implementation should use a defined bias network, emitter degeneration where needed, controlled terminations, and a PCB layout that minimizes parasitic inductance and maintains predictable impedance.
推荐
RF Amplifier Bias and Matching Platform
The 2SC5226A-4-TL-E is useful in a small RF amplifier evaluation platform because its documented 1.0 dB typical noise figure at 1 GHz and 12 dB typical S21e provide measurable starting points. Engineers can characterize DC operating points, input and output return loss, gain, noise figure, and stability across frequency using controlled test fixtures. The 150 mW dissipation rating makes thermal monitoring important, and the 70 mA collector-current ceiling should be enforced during bias sweeps.
推荐
Portable RF Communication Module
The 2SC5226A-4-TL-E can be considered for compact portable RF communication modules that require an NPN low-noise amplifier device in a small surface-mount package. Its 10 V rating and 70 mA current capability suit low-power RF stages, while the 7 GHz typical transition frequency offers operating margin for VHF/UHF designs. Package size alone does not guarantee RF performance; the board must provide controlled ground geometry, stable bias, adequate decoupling, and tuned impedance paths, with thermal conditions checked for the final enclosure.
推荐
推荐产品汇总
工程参考数据： 2SC5226A-4-TL-E ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | 2SC5226A-5-TL-E | 2SC5226A |
|---|---|---|---|
| Brand | onsemi | onsemi | onsemi |
| Package | SC-70 / MCP3 | SC-70 / MCP3 | SC-70 / MCP3 |
| Device Type | NPN RF BJT | 2SC5226A RF transistor family | NPN RF transistor |
关键差异点
- Verified 1.0 dB typical noise figure at 1 GHz （对比 2SC5226A)
- Verified 12 dB typical S21e gain at 1 GHz （对比 2SC5226A)
- 7 GHz typical transition frequency （对比 2SC5226A-5-TL-E)
设计说明
Keep the transistor leads and surrounding RF network short, especially the emitter return and collector load connections. Use a continuous ground plane where practical, minimize via inductance, and place bypass capacitors close to the bias network. The SC-70/MCP3 package is compact, but package size does not compensate for long traces or poor grounding; layout parasitics can materially alter gain, noise figure, and stability near 1 GHz.
Do not assume that any transistor with a similar 7 GHz rating is a drop-in replacement. Verify the exact three-terminal pinout, package drawing, collector-emitter voltage rating, collector-current limit, and DC gain. The supplied data identifies the target as a 10 V, 70 mA NPN device, while several required alternative parameters are not provided. Confirm the manufacturer datasheet and perform a schematic, footprint, and RF-performance review before substitution.
Estimated design constraint: using the verified 150 mW collector power-dissipation value as the initial envelope, do not design the stage to continuously operate at that limit without checking the onsemi thermal ratings and ambient temperature. Estimated dissipated power is P = VCE × IC, so a 10 V collector-emitter condition at 70 mA would calculate to 700 mW, which exceeds the listed 150 mW device rating and must not be used as a normal operating point without manufacturer-approved derating and thermal analysis.
合规信息
The supplied verified data does not state RoHS, REACH, AEC-Q100, lead-free, halogen-free, or conflict-minerals status for the exact orderable MPN. Compliance must be confirmed from current onsemi regulatory documentation.
