BAP65-02,115 - 30V 100mA RF PIN Diode SOD-523 | NXP
MPN: BAP65-02,115 β End of Life| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.14 | $0.14 |
| 10 | $0.13 | $1.30 |
| 100 | $0.11 | $11.00 |
| 500 | $0.09 | $45.00 |
| 1,000 | $0.08 | $80.00 |
| 3,000 | $0.07 | $210.00 |
BAP65-02,115 Overview
A PIN diode is a silicon diode with an intrinsic (undoped) semiconductor layer sandwiched between the P-type and N-type regions. Under forward bias, stored carriers in the intrinsic layer make the device behave as a current-controlled RF resistor; under reverse bias it acts as a small, nearly constant capacitance. This combination makes PIN diodes the standard control element in RF switches, step attenuators, AGC circuits and transmit/receive paths, sitting within the broader hierarchy of diodes -> RF diodes -> discrete semiconductors.
Key features include low diode capacitance (0.9 pF max), low forward resistance (about 1 ohm, for low RF loss), very low series inductance from the SOD-523 leadframe, and high-voltage, current-controlled behavior suited to linear attenuator designs. NXP characterizes the BAP65-02 series specifically as a series diode for mobile communication transmit/receive switches.
Architecturally, the planar PIN structure provides a thick intrinsic region whose carrier lifetime supports RF switching up into the GHz range while maintaining a clean, low-Q capacitance in the off state, which improves switch isolation and attenuator linearity.
Typical applications include RF attenuator and switch circuits in mobile communication handsets, transmit/receive switching in wireless modules, and AGC/variable-attenuator functions in RF front ends. Note: this part is NOT RECOMMENDED FOR NEW DESIGNS per NXP documentation; new designs should evaluate the current-generation alternatives listed on this page.
Design consideration: RF performance depends strongly on bias network layout - keep the RF choke and DC-blocking capacitors close to the diode and place ground vias directly at the SOD-523 pads to exploit the very low series inductance.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for BAP65-02,115 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BAP65-02,115 (same form factor and footprint) β differing in Configuration, Minimum Order Quantity.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
BAP65LX,315
β Drop-Inπ Reference alternative (not in catalog)
BAP65-02,135
β Drop-Inπ Reference alternative (not in catalog)
BAP64-02,115
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
BAP65-02,115 Maximum Ratings & Electrical Characteristics
| Diode Type | RF PIN diode (silicon planar) |
| Configuration | Single |
| Reverse Voltage (VR) | 30 V |
| Forward Current (IF) | 100 mA |
| Total Power Dissipation (Ptot) | 715 mW |
| Diode Capacitance (Cd) max | 0.9 pF |
| Forward Resistance (RF) | 1 ohm (typical) |
| Forward Voltage (VF) | 900 mV |
| Series Inductance | Very low (SOD-523 leadframe) |
| Package | SOD-523 (SC-79) ultra small SMD plastic |
| Mounting Type | Surface Mount |
| Applications | RF attenuator and switch; series diode for mobile communication T/R switch |
| Lifecycle Status | Not recommended for new designs (NRND) |
| Packing | Reel 7 inch Q1/T1, 3000 pieces per reel |
| Minimum Order Quantity | 3000 |
BAP65-02,115 Pin Configuration
| Pin 1 | K (Cathode) β Cathode terminal of the PIN diode |
| Pin 2 | A (Anode) β Anode terminal of the PIN diode |
Typical Applications
BAP65-02,115 is suitable for 6 applications: Mobile Communication T/R Switch, RF Step and Variable Attenuators, RF Switch Matrix and Module Front Ends, Automatic Gain Control (AGC) Circuits, RF Limiter and Protection Circuits, Phase Shifters and Tunable RF Networks.
Mobile Communication T/R Switch
The BAP65-02,115 was designed by NXP specifically as a series diode for mobile communication transmit/receive switches in handsets. Its 0.9 pF maximum capacitance keeps off-state loading of the antenna path minimal, preserving receive sensitivity, while the approximately 1 ohm forward resistance limits transmit insertion loss, which directly conserves battery power during transmit bursts. The very low series inductance of the SOD-523 package keeps parasitic resonance out of the GSM bands. In this role the diode is DC-biased through an RF choke and AC-coupled with blocking capacitors. New handset designs should qualify the current-generation BAP65LX series instead, as the BAP65-02 is not recommended for new designs and carries a 99-week factory lead time.
Recommended
RF Step and Variable Attenuators
In PIN-diode attenuators, the RF resistance of the diode is a controlled function of forward bias current, so the BAP65-02,115 with its approximately 1 ohm minimum resistance and 0.9 pF capacitance serves well in switched step attenuators and analog AGC attenuator legs. Because the intrinsic-layer carrier storage gives a linear, low-distortion resistance, attenuation accuracy is maintained across the RF power range typical of handset and module front ends. The 715 mW dissipation rating bounds the RF power that can be absorbed, so series/parallel attenuator topologies should distribute power across multiple diodes. Bias networks must use adequate RF chokes to prevent attenuator flatness degradation at low frequencies. Verify final attenuation flatness across the target band on the actual PCB.
Recommended
RF Switch Matrix and Module Front Ends
Series-shunt PIN diode combinations built from BAP65-02,115 devices implement SPDT and higher-throw switch matrices used in wireless modules and RF front-end modules. The low 0.9 pF off-capacitance of each shunt element yields high isolation across broad frequency ranges, while series elements contribute only about 1 ohm of loss. The SOD-523 footprint allows tight packing of multiple diodes in a compact switching network. Control is applied through bias tees with chokes and bypass capacitors; switching speed is set by the bias driver rather than the diode itself. Designers must ensure the reverse bias across each off-state diode stays below the 30 V rating, including RF voltage swing peaks, to prevent unintended conduction or damage.
Recommended
Automatic Gain Control (AGC) Circuits
The current-controlled resistance characteristic of the BAP65-02,115 makes it a clean variable-resistance element for AGC loops in RF and IF stages. A control current in the microamp-to-milliamp range adjusts the diode resistance smoothly, avoiding the switched steps of digital attenuators and the distortion of MOSFET-based variable resistors. With 0.9 pF capacitance, the AGC element adds minimal frequency-dependent loading, keeping gain flatness predictable across the band. The control bandwidth is limited by carrier lifetime in the intrinsic region, so designers should dimension loop compensation accordingly. Since this part is NRND, new AGC designs should be evaluated with the BAP65LX series, which provides equivalent behavior in the same SOD-523 footprint with current-production support.
Recommended
RF Limiter and Protection Circuits
PIN diodes with low capacitance and controlled conduction can be used in receiver protect circuits, where the diode clamps high RF input power before the low-noise amplifier. The BAP65-02,115 provides 30 V reverse voltage and 100 mA forward current capability with only 0.9 pF of added capacitance in the receive path, which is attractive for sensitive front ends. Under high-power events, the diode self-acts as a rectifier and presents a low resistance, shunting energy; the 715 mW steady-state dissipation rating defines the sustained-power limit, so true high-power limiter designs must rely on the transient capability and duty cycle. Zero-bias or lightly-biased limiter topologies should be validated over temperature across the full expected power range.
Recommended
Phase Shifters and Tunable RF Networks
Switched-line and loaded-line phase shifters use PIN diodes as low-loss single-pole switches in the RF path, and the BAP65-02,115 fits this duty with its approximately 1 ohm on-resistance and 0.9 pF off-capacitance, keeping insertion loss and phase ripple low. In tunable matching networks and antenna tuners, arrays of such diodes switch in or out reactive elements under digital control. The SOD-523 package's very low series inductance is critical here, since excess parasitic inductance shifts the frequency response of the tuning network. Each switched state must keep the off-state RF voltage below the 30 V rating. For new tunable-network designs, specify the current-production BAP65LX series to secure long-term supply.
Recommended
Recommended Products Summary
Engineering reference data for BAP65-02,115 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BAP65LX,315 | BAP65-02,135 | BAP64-02,115 |
|---|---|---|---|---|
| Package | SOD-523 | SOD-523 - same | SOD-523 - same | SOD-523 - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Lifecycle Status | NRND (not recommended for new designs) | Active - preferred for new designs | Same series as this product | Active |
Key Differentiators
- Very low series inductance (vs Generic SOD-323 PIN diodes)
- Low forward resistance for low insertion loss (vs BAP64-02,115)
- Ultra-small 0.9 pC capacitance class (vs BAP65-02,135)
Design Notes
RF performance of the BAP65-02,115 depends strongly on layout parasitics. Place the SOD-523 diode so that its pads connect directly to a controlled-impedance 50 ohm microstrip line, with ground vias immediately adjacent to the pad field. The NXP datasheet emphasizes very low series inductance as a key feature, which is only realized if pad-to-ground return paths are short. Keep DC-blocking capacitors and the bias choke within 2 mm of the diode to preserve the low-capacitance (0.9 pF) off-state isolation advantage in GHz-range switch designs.
Respect the 715 mW total power dissipation and 100 mA forward current limits. In attenuator or switch duty, estimated dissipation equals IRF^2 x RF resistance; for example, at 100 mA bias the on-state loss is on the order of 100 mW before RF power contribution, but transmitted RF power absorbed in a limiter role can drive the diode toward its limit quickly. Use SOD-523 thermal derating from the manufacturer datasheet and ensure at least adequate copper pour on both pads. Estimated: P = I^2 x R with I = 100 mA and R = 1 ohm gives 10 mW of DC bias loss alone.
Two frequent mistakes with this part: (1) ignoring that NXP marks it as NOT RECOMMENDED FOR NEW DESIGNS with a 99-week factory lead time - new designs should dual-source or migrate to the BAP65LX series in the same SOD-523 footprint; (2) confusing the ordering suffixes: ,115 vs ,135 differ in packing configuration, not electrical behavior. Also verify cathode orientation (pin 1) at assembly - an reversed PIN diode in a T/R switch will pass signal only at high RF drive and ruin isolation.
Compliance Information
Compliance status was not stated in the retrieved web data; confirm RoHS/REACH status on the official NXP product page for the BAP65-02 before procurement.
