BAP65-02,115 - 30V 100mA PIN Diode SOD-523 | NXP | RF Switch
MPN: BAP65-02,115 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.14 | $0.14 |
| 10 | $0.13 | $1.30 |
| 100 | $0.11 | $11.00 |
| 500 | $0.1 | $50.00 |
| 1,000 | $0.09 | $90.00 |
BAP65-02,115 Overview
A PIN diode is a special class of semiconductor diode with a wide, lightly doped intrinsic (I) region sandwiched between the P-type and N-type regions. In the RF domain, the PIN diode functions as a current-controlled RF resistor: under forward bias its RF resistance varies nearly linearly with DC bias current, while under reverse bias it behaves as a small, nearly constant capacitance. This makes PIN diodes the workhorse switching and attenuating elements in the RF front-end hierarchy of wireless transceivers, sitting alongside RF switches, RF amplifiers, and antenna systems.
Key features of the BAP65 family include high breakdown voltage for a small-footprint PIN diode, low diode capacitance for minimal insertion loss, low forward resistance for low on-state loss, and very low series inductance thanks to the SOD-523 package construction. According to the NXP product data sheet, the BAP65-02 is described as a high-voltage, current-controlled RF resistor optimized for RF switch applications.
The planar construction delivers consistent, well-controlled capacitance and resistance values across production lots, which is critical for matching in multi-throw antenna switch banks. The small 1.2 mm x 0.6 mm SOD-523 footprint allows dense placement directly at antenna ports or filter nodes, keeping parasitic loops short at GHz frequencies.
Typical applications include antenna switching in mobile and IoT transmitters, transmit/receive switching in short-range radios, RF attenuator circuits, and protection/biasing networks in RF front-end modules. Its 30 V rating gives headroom for switching relatively high RF swing signals.
Design consideration: PIN diode RF resistance scales with forward bias current, so the driver circuit must supply a stable, well-filtered DC bias; inadequate bias current raises insertion loss and distortion.
This page adds value beyond the NXP datasheet by consolidating distributor pricing, drop-in alternatives, comparison tables, and practical RF layout notes for the BAP65-02,115 in one AI-citable reference.
Drop-in alternatives for BAP65-02,115 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
BAP65-01
β Drop-Inπ Reference alternative (not in catalog)
BAP65-02,115
β Drop-Inβ In Stock
$0.07 / Unit
View Datasheet βBAP65-02,115 Maximum Ratings & Electrical Characteristics
| Device Type | Silicon PIN diode (single) |
| Reverse Voltage (VR) | 30 V |
| Forward Current (IF) | 100 mA |
| Power Dissipation (Ptot) | 715 mW |
| Configuration | Single PIN diode |
| Package | SOD-523 (SC-79) ultra small SMD plastic |
| Package Dimensions | 1.2 mm x 0.6 mm (SOD-523) |
| Mounting Type | Surface Mount |
| Ordering Code | BAP65-02,115 (reel 7 inch, standard packing) |
| Minimum Package Quantity | 3000 pieces |
| Minimum Order Quantity | 3000 pieces |
| Lead Time | 99 weeks (per NXP product page) |
BAP65-02,115 Pin Configuration
| Pin 1 | K (Cathode) β Cathode terminal of the PIN diode |
| Pin 2 | A (Anode) β Anode terminal of the PIN diode |
Typical Applications
BAP65-02,115 is suitable for 6 applications: RF Antenna Switching, Transmit/Receive (T/R) Switching, Voltage-Variable RF Attenuators, RF Front-End Modules for Mobile Devices, RF Switch Matrices and Test Instrumentation, RF Protection and Limiter Circuits.
RF Antenna Switching
The BAP65-02 serves as a series or shunt switching element at antenna ports in mobile, IoT, and short-range wireless devices. Its 30 V reverse voltage rating tolerates elevated RF swing at the antenna, while the low diode capacitance stated in the NXP datasheet keeps off-state isolation high and insertion loss low. In a typical series-SPST cell, the diode is forward-biased through an RF choke with 5-20 mA of DC current to set a low RF resistance, and reverse-biased at up to 30 V for the off state. The 1.2 mm x 0.6 mm SOD-523 body permits placement directly at the antenna feed point, minimizing the parasitic transmission-line stub that would otherwise degrade match. Bias networks must be well decoupled so DC supply noise does not leak into the RF path.
Recommended
Transmit/Receive (T/R) Switching
In half-duplex radios, the BAP65-02 can form the shunt arm of a T/R switch, shorting the receiver input during transmit bursts to protect the low-noise amplifier. The 100 mA forward current and 715 mW dissipation ratings allow it to handle the leakage RF power present at that node, while the reverse-biased 30 V class junction presents minimal capacitance when receiving. According to the NXP datasheet, the family is characterized as a current-controlled RF resistor, so the transmit-path series diode is biased with a constant-current driver to hold on-state resistance stable across temperature and unit-to-unit variation. Driver rise/fall time sets switching speed; PIN diode carrier lifetime dominates turn-off, so bias circuit design determines the T/R turnaround time achievable.
Recommended
Voltage-Variable RF Attenuators
Because the BAP65 PIN diode behaves as a current-controlled RF resistor, it is a natural fit for PIN diode attenuator ladders (bridged-T and Pi topologies) used in AGC loops, transmitter power trimming, and test equipment. The NXP datasheet highlights the low forward resistance and very low series inductance that keep attenuation accurate into the GHz range. In a Pi attenuator, two shunt diodes and one series diode are driven with complementary bias currents so that total attenuation varies smoothly while input/output impedance stays roughly constant. The 30 V rating also allows reverse-biased reflection-type attenuator stages. Designers should bias with filtered current sources, since bias-line ripple appears as amplitude modulation on the RF signal.
Recommended
RF Front-End Modules for Mobile Devices
Space-constrained RF front-end modules benefit from the BAP65-02's SOD-523 footprint, among the smallest 2-pin RF diode packages available. In antenna diversity and tuning applications, banks of BAP65-02 diodes switch or shunt segment inductors/capacitors to retune the antenna matching network across bands. The low diode capacitance specified by NXP keeps the off-state Q high, and the planar construction gives consistent capacitance across lots, which matters when several diodes operate in parallel. Placement should follow RF layout best practice: short stubs to the matching elements, solid ground return adjacent to the diode cathode, and bias feeds with high-impedance lines or 0402 chip inductors. The 30 V rating accommodates high instantaneous RF voltage at resonance peaks.
Recommended
RF Switch Matrices and Test Instrumentation
Automated test equipment and laboratory switch matrices use BAP65-class PIN diodes to route RF signals between ports. The BAP65-02's combination of 30 V handling, 100 mA current, and low capacitance per the NXP datasheet suits both signal-path and bias-probe switching. PIN diodes are preferred over CMOS switches at higher RF power because the series resistance is linear with signal level, reducing harmonic distortion of the switched waveform. In a matrix, each crosspoint uses one series diode with a dedicated bias driver; isolation between unused paths improves with shunt diodes reverse-biased to 30 V. Thermal management is straightforward at 715 mW, but dense matrices need copper pours under the SOD-523 pads to keep junction temperature in check.
Recommended
RF Protection and Limiter Circuits
The BAP65-02 can act in PIN diode limiter stages ahead of sensitive receivers. Under high incident RF power the diode self-rectifies, its increasing conduction clamps the signal delivered to the low-noise amplifier. The 30 V breakdown and 100 mA / 715 mW ratings per DigiKey define the survivable exposure, and NXP's stated high-voltage capability makes the family suitable for this duty relative to smaller-signal diodes. Limiters typically use a shunt diode a quarter-wave from the LNA input with an RF choke return; adding a second stage improves power handling at the cost of slight low-level insertion loss. Recovery time after the overload depends on carrier lifetime in the I-region, so the same bias considerations as switch design apply to system turnaround behavior.
Recommended
Recommended Products Summary
Engineering reference data for BAP65-02,115 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BAP65-01 | BAP65-05 |
|---|---|---|---|
| Package | SOD-523 (2-pin) | SOD-523 (2-pin) - same | SOT-23 (TO-236AB) 3-pin - not drop-in |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Configuration | Single PIN diode | Single PIN diode | 1 pair, common cathode |
| Reverse Voltage | 30 V | 30 V | 30 V |
| Forward Current | 100 mA | 100 mA | 100 mA |
| Power Dissipation | 715 mW | 715 mW | 250 mW |
| Primary Application | RF switches (single element) | RF switches (single element) | Series-diode SPDT RF switches |
Key Differentiators
- Smallest 2-pin footprint with highest power rating in the family (vs BAP65-05)
- High-voltage current-controlled RF resistor behavior (vs BAP65-01)
- Single-diode flexibility versus integrated pair (vs BAP65-05)
Design Notes
Place the BAP65-02 directly at the RF node with the shortest possible connection traces, since the SOD-523 package contributes very low series inductance only when the surrounding layout is also low-inductance. Provide a solid ground plane adjacent to the cathode pad, and route the DC bias feed through a high-impedance line or 0402 chip inductor (e.g., 22 nH at GHz bands) with a shunt bypass capacitor to keep RF off the bias bus. Avoid routing bias lines under or parallel to the RF trace.
The BAP65-02 is a current-controlled RF resistor: on-state RF resistance is set by forward bias current, so use a regulated current source rather than a bare voltage feed for repeatable insertion loss. Estimated thermal check: at the full 715 mW rating with the SOD-523 package, junction temperature rise will dominate the design; typical SOD-523 theta_JA is high (on the order of hundreds of C/W on minimal copper), so verify against the NXP datasheet thermal section and use generous copper pour for continuous-duty applications near the rating.
Do not exceed the 30 V reverse voltage rating, including RF peak swing plus any DC reverse bias; antenna resonance can multiply instantaneous voltage well above the transmit power estimate. Do not substitute BAP65-05 (SOT-23 common-cathode pair) onto a SOD-523 footprint - the packages and pin counts differ. When building matched banks, mix only identical grading variants (e.g., all BAP65-02); combining BAP65-01 and BAP65-02 in parallel paths introduces capacitance mismatch. Also verify lead time: NXP lists 99 weeks for direct factory orders, so secure distributor stock early.
Compliance Information
Compliance status not explicitly stated in the verified data retrieved. Confirm RoHS/REACH status on the official NXP product page (nxp.com/part/BAP65-02) before design-in.
