BAP65-05,215 - Dual PIN Diode 30V SOT-23 RF Switch | NXP
MPN: BAP65-05,215 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.38 | $0.38 |
| 10 | $0.3 | $3.00 |
| 100 | $0.21 | $21.00 |
| 500 | $0.16 | $80.00 |
| 1,000 | $0.12 | $120.00 |
BAP65-05,215 Overview
A PIN diode is a silicon semiconductor device with a wide, lightly doped intrinsic layer between P and N regions. In RF systems, it behaves as a current-controlled resistor: under forward bias its RF resistance drops to a few ohms, while under reverse bias it acts as a small, nearly lossless capacitor. This makes PIN diodes the preferred switching and variable-attenuation element in RF front ends, where mechanical relays or FETs would introduce unacceptable distortion or capacitance.
Key features of the BAP65-05 include two elements sharing a common cathode, enabling series-SPDT and series-shunt switch topologies in a single 3-pin package; low diode capacitance that minimizes off-state feedthrough at VHF through microwave frequencies; and low forward resistance that reduces on-state insertion loss. The 30 V breakdown rating supports RF switch stacks in higher-voltage PA bias switching and TDD radios.
Because both diodes share one die-level structure, RF designers achieve matched on-resistance and capacitance between series and shunt arms, improving switch isolation symmetry. The SOT-23 footprint keeps parasitic inductance low, and the device is supplied in Tape & Reel (suffix ,215) for automated pick-and-place assembly.
Typical applications include antenna RF switch matrices, transmit/receive switching in wireless transceivers, RF attenuator networks, and broadband RF switching in test instrumentation.
Design consideration: PIN diode carriers (stored charge) determine switching speed and low-frequency distortion; keep forward bias current sufficiently high for the RF signal amplitude to avoid intermodulation.
This page synthesizes distributor pricing, drop-in alternative analysis, pinout data, and practical RF design notes not found in the manufacturer datasheet.
Drop-in alternatives for BAP65-05,215 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
BAP65-05
β Drop-Inπ Reference alternative (not in catalog)
BAP65-05W
β Drop-Inπ Reference alternative (not in catalog)
BAP70-05,215
β Drop-Inπ Reference alternative (not in catalog)
BAP65-05,215 Maximum Ratings & Electrical Characteristics
| Diode Type | PIN - 1 Pair Common Cathode |
| Reverse Voltage (VR) | 30 V |
| Maximum Forward Current | 100 mA |
| Power Dissipation | 250 mW |
| Diode Capacitance | 0.425 pF @ 20 V, 1 MHz |
| Configuration | Two elements, common cathode |
| Application | RF switch / attenuator (current-controlled RF resistor) |
| Breakdown Voltage | 30 V |
| Package | SOT-23 (TO-236AB) |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (TR), suffix ,215 |
| Technology | Silicon PIN |
| Forward Resistance | Low diode forward resistance (low loss) |
| RoHS Status | Compliant |
BAP65-05,215 Pin Configuration
| Pin 1 | A1 β Anode of diode 1 |
| Pin 2 | K β Common cathode of both diodes |
| Pin 3 | A2 β Anode of diode 2 |
Typical Applications
BAP65-05,215 is suitable for 6 applications: Antenna RF Switch Matrix, T/R Switching in Wireless Transceivers, Voltage-Variable RF Attenuators, Broadband Test and Measurement Switching, PA Bias Switching and RF Power Control, RF Front-End Protection and Limiting.
Antenna RF Switch Matrix
The BAP65-05,215 fits antenna switching matrices because its dual common-cathode structure provides a matched series/shunt diode pair in one SOT-23 package, keeping series-arm and shunt-arm on-resistance symmetric. Its 0.425 pF off-state capacitance at 20 V bias limits off-port feedthrough at VHF/UHF, while low forward resistance minimizes insertion loss in the conducting path. The 30 V rating handles typical receiver-side RF swings plus bias. Placed directly at the antenna port with bias via RF chokes and DC-blocking capacitors, the part implements SPDT or SPnT cells with isolation dominated by package parasitics rather than the diode itself, enabling compact multi-antenna front ends in radios and IoT gateways.
Recommended
T/R Switching in Wireless Transceivers
In half-duplex transceivers, the BAP65-05,215 serves as the series-shunt T/R switch element: the series diode conducts during transmit and the shunt diode clamps leakage into the receiver. NXP characterizes the part as a current-controlled RF resistor, so a few mA of forward bias yields low on-resistance and low distortion at the PA output. The common-cathode pinout allows both diodes to be biased from a single control node, simplifying the driver circuit. The 30 V reverse rating must cover the peak RF voltage plus bias under antenna mismatch; for higher-power PAs, the pin-compatible BAP70-05,215 with 50 V rating drops into the same footprint without PCB rework.
Recommended
Voltage-Variable RF Attenuators
The BAP65-05,215 is explicitly designed as a high-voltage, current-controlled RF resistor for attenuators. Varying the forward bias current sweeps the PIN diode RF resistance from a few ohms to kilo-ohms, implementing bridged-T or Pi attenuator networks with continuously variable attenuation. Using both diodes from one package guarantees thermal and process tracking between the series and shunt elements, which keeps the attenuator's input/output match stable across the control range. The low 0.425 pF off-capacitance preserves high attenuation states at microwave frequencies. Keep carrier lifetime in mind: at low bias currents the diode introduces distortion, so bias the device well above the RF current amplitude for low IMD in AGC loops.
Recommended
Broadband Test and Measurement Switching
Instrument-grade RF path switching benefits from the BAP65-05,215's combination of low capacitance, low forward resistance, and pin-to-pin matched dual elements. In switch matrices and signal routers inside vector network analyzers, spectrum analyzers, and automated test fixtures, the diode's quasi-linear current-controlled resistance produces less harmonic distortion than FET switches at comparable insertion loss. The SOT-23 footprint contributes only small series parasitic inductance, extending flat bandwidth into the GHz range. Bias networks use RF chokes sized for the lowest operating frequency, and DC-blocking capacitors isolate the control circuitry. The 250 mW dissipation rating suits signal-level rather than power-level switching paths.
Recommended
PA Bias Switching and RF Power Control
PIN diodes like the BAP65-05,215 switch RF power amplifier bias paths and feedback loops because the diode resistance is set by DC control current, decoupling the RF path from digital control lines. In multi-band transmitters, one common-cathode package switches two RF branches with a single bias node. The 30 V rating covers battery-powered PA drain swings in the 2-3 W class; designers should estimate worst-case reverse voltage as peak RF voltage plus bias and select the 50 V BAP70-05,215 for margin. Switching speed is governed by carrier recombination, so for fast TDD turnaround, maintain a small standby forward current to purge stored charge and reduce switching transients.
Recommended
RF Front-End Protection and Limiting
The BAP65-05,215 works as an RF limiter element protecting sensitive LNAs: at small signals the unbiased diode appears as 0.425 pF and passes the signal with minimal loss, while during strong-signal events the rectified diode current self-biases it into conduction, reflecting the surge away from the receiver input. Its low forward resistance clamps efficiently, and the dual common-cathode configuration enables anti-series limiter pairs that cancel even-order distortion. Place the diode a quarter-wave from the LNA input with a shunt short stub to create the classic PIN limiter topology. Verify the 30 V rating against the expected maximum incident power and antenna mismatch scenarios in your link budget.
Recommended
Recommended Products Summary
Engineering reference data for BAP65-05,215 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BAP65-05 | BAP65-05W | BAP70-05,215 |
|---|---|---|---|---|
| Package | SOT-23 (TO-236AB) | SOT-23 (TO-236AB) - same | SOT-23 (TO-236AB) - same | SOT-23 (TO-236AB) - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Reverse Voltage | 30 V | 30 V | 30 V | 50 V |
| Maximum Forward Current | 100 mA | 100 mA | 100 mA | 100 mA |
| Power Dissipation | 250 mW | 250 mW | 250 mW | 250 mW |
| Configuration | Dual common cathode | Dual common cathode | Dual common cathode | Dual common cathode |
| Primary Application | RF switch / attenuator | RF switch / attenuator | RF switch / attenuator | RF switch / attenuator (high voltage) |
Key Differentiators
- Lowest-cost dual common-cathode PIN pair in the NXP RF diode family (vs BAP70-05,215)
- Low off-state capacitance preserves isolation at RF (vs BAP65-05W)
- Dual elements on one die guarantee series/shunt tracking (vs Two discrete single-diode parts)
Design Notes
PIN diode distortion is dominated by stored charge (carrier lifetime) relative to RF signal current. To keep intermodulation low, bias the BAP65-05,215 with DC forward current well above the peak RF current amplitude in the diode; a common rule of thumb is ID >= 10x the RF peak current for audio-band RF modulation with low IMD. In attenuator designs, remember the resistance-vs-current slope is nonlinear at low bias - reserve the lowest few mA of control current for coarse attenuation only.
Keep the RF path traces at the SOT-23 pins as short and wide as feasible; the package lead inductance (roughly 1-2 nH) sets the upper-frequency insertion-loss floor. Route bias feeds through RF chokes or high-value resistors whose impedance is at least 10x the diode RF resistance at the lowest operating frequency, and use DC-blocking capacitors with self-resonant frequency above the band. Place a via fence to ground near the cathode bias network to contain RF leakage from the control node.
The most frequent failure mode is exceeding the 30 V reverse rating: worst-case antenna SWR can multiply the peak RF voltage at the diode by 2x or more, so compute reverse voltage as (peak RF voltage x VSWR factor) + DC bias before committing to the BAP65-05. If the estimate exceeds 30 V, the pin-compatible BAP70-05,215 (50 V) drops onto the same land pattern with no layout change. Also avoid driving the diode into thermal runaway in CW operation: 250 mW at SOT-23 theta-JA requires verification of junction temperature at maximum ambient.
Compliance Information
The ,215 ordering suffix denotes NXP's standard lead-free, RoHS-compliant Tape & Reel product. REACH, halogen-free, and conflict-minerals declarations not present in retrieved data - obtain certificates from NXP.
