IGB50N60T - 600V 50A TRENCHSTOP IGBT3 TO-263 | Infineon
MPN: IGB50N60T ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.1 | $4.10 |
| 10 | $3.69 | $36.90 |
| 100 | $3.28 | $328.00 |
| 500 | $2.78 | $1,390.00 |
| 1,000 | $2.36 | $2,360.00 |
IGB50N60T Overview
An IGBT (Insulated Gate Bipolar Transistor) is a voltage-controlled bipolar power semiconductor that merges the high input impedance of a MOSFET gate with the low conduction losses of a bipolar transistor. Within the discrete power-semiconductor family tree, IGBTs sit between MOSFETs and thyristors: IGBT → bipolar power transistor → discrete semiconductor → power management IC ecosystem. The TRENCHSTOP IGBT3 generation further refined the cell geometry to shrink on-state VCE(sat) and tail losses versus the earlier NPT (non-punch-through) IGBT families.
Key specifications include a collector-emitter breakdown voltage VCES of 600 V, a continuous DC collector current IC of 50 A at TC = 100 °C, a pulsed collector current ICM of 150 A, a gate-emitter threshold VGE(th) of typically 5.0 V, a gate-emitter maximum VGES of ±20 V, and a total switching energy Ets of roughly 1.7 mJ at 400 V/25 A. The integrated soft-recovery emitter-controlled diode eliminates the need for an external anti-parallel diode in most bridge legs, reducing BOM count and PCB area.
Architecturally, the device uses Infineon's third-generation fieldstop trench design: a thin n- drift region field-stops the depletion layer at reverse bias for high blocking voltage with low VCE(sat), while the trench gate increases channel density per unit area. The co-packaged emitter-controlled diode is engineered for soft reverse recovery (low Qrr), suppressing voltage overshoot and EMI in hard-switched bridges such as PFC stages and motor inverters.
Typical applications include uninterruptible power supplies (UPS), solar inverters, welding inverters, induction-heating converters, industrial motor drives, and PFC boost stages in switched-mode power supplies. In a 600 V class PFC or full-bridge converter, the IGB50N60T is normally used at switching frequencies of 8 kHz to 40 kHz, balancing switching loss against magnetic size. Its 50 A continuous rating covers 5 kW to 10 kW single-switch converter stages with adequate thermal design.
When designing with this part, derate the collector current with TC and ensure the heatsink keeps TJ below 150 °C at worst-case load. The co-packaged diode's reverse-recovery behaviour sets the dead-time requirement in half-bridge stages — too short a dead time risks shoot-through, too long increases conduction loss on the freewheeling diode.
Drop-in alternatives for IGB50N60T — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IGB50N60T (same form factor and footprint) — differing in Mounting Type, Package.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IGB50N60TATMA1
✅ Drop-In✓ In Stock
$2.2 / Unit
View Datasheet →IGB50N60T Maximum Ratings & Electrical Characteristics
| Collector-Emitter Voltage (VCES) | 600 V |
| Continuous DC Collector Current (IC, TC=100°C) | 50 A |
| Pulsed Collector Current (ICM, tp limited by Tjmax) | 150 A |
| Total Power Dissipation (Ptot, TC=25°C) | 333 W |
| Gate-Emitter Threshold Voltage (VGE(th), IC=1.2 mA, VCE=VGE) | 5.0 V (typical), 4.5 V min / 6.5 V max |
| Gate-Emitter Voltage Maximum (VGES) | ±20 V |
| Total Switching Energy (Ets, VCC=400 V, IC=25 A, VGE=±15 V) | 1.7 mJ (typical) |
| Short-Circuit Withstand Time (tsc, VCC=360 V, VGE=±15 V, TC=25°C) | 10 µs (typical) |
| Operating Junction Temperature Range | -40 °C to +150 °C |
| Storage Temperature Range | -55 °C to +150 °C |
| Package | PG-TO263-3-2 (TO-263 / D2Pak, surface mount) |
| Mounting Type | Surface Mount (D2Pak tab acts as drain/collector) |
| Technology Family | TRENCHSTOP IGBT3 with fieldstop and co-packaged soft-recovery emitter-controlled diode |
| RoHS Status | Compliant |
IGB50N60T Pin Configuration
| Pin 1 | Gate — MOS-gate control input; driven typically by 15 V gate-drive signal via external gate resistor |
| Pin 2 | Collector — Main power terminal, electrically continuous with the metal back tab; tied to high-voltage bus |
| Pin 3 | Emitter — Common reference for gate drive and source of the co-packaged diode cathode-return path |
| Pin TAB | Collector (back tab) — Electrically identical to pin 2 (Collector); provides thermal path and must be soldered to PCB copper |
Forward Bias Safe Operating Area (FBSOA), TC=25°C, VGE=15V
Typical Applications
IGB50N60T is suitable for 7 applications: Uninterruptible Power Supplies (UPS), Solar String Inverters, Industrial Motor Drives, Welding Inverters, Induction Heating Cooktops, Power-Factor-Correction (PFC) Boost Stages, Switched-Mode Power Supply (SMPS) Primary Switch.
Uninterruptible Power Supplies (UPS)
The IGB50N60T's 600 V VCES, 50 A continuous IC, and 333 W power dissipation rating make it well suited for single-switch PFC and inverter stages in 1–10 kVA UPS systems. Its TRENCHSTOP IGBT3 technology keeps VCE(sat) low enough that a TO-263 footprint can sustain the 5–8 kW power range at typical 16–25 kHz switching frequencies. The co-packaged soft-recovery emitter-controlled diode removes the need for an external anti-parallel diode, simplifying the bridge and reducing PCB parasitic inductance — important for clean switching in online double-conversion UPS topologies.
Recommended
Solar String Inverters
In 600 V class residential and commercial string inverters, the IGB50N60T serves as the primary switching element in PFC boost and full-bridge DC-AC stages. Its 600 V VCES comfortably handles 400 V open-circuit PV strings with 1.5× derating margin, while the 50 A rating supports single-phase inverters up to roughly 8 kW. The TRENCHSTOP IGBT3's low Ets (about 1.7 mJ at 400 V/25 A) limits switching losses at the 16–20 kHz frequencies favored for transformer-isolated designs. The co-packaged soft-recovery diode also reduces conducted and radiated EMI in residential installations.
Recommended
Industrial Motor Drives
For variable-frequency drives (VFD) controlling 230 V / 400 V AC induction motors up to about 7.5 kW, the IGB50N60T handles the hard-switching inverter stage at frequencies of 4–16 kHz. Its 600 V rating survives DC bus transients from regenerative braking, and the 50 A continuous IC rating fits motor current ratings in the 24–30 A range with thermal headroom. The soft-recovery emitter-controlled diode suppresses dv/dt-induced ringing on long motor cables, reducing insulation stress and EMI. The TO-263 surface-mount package enables compact IPM-style drive boards with aluminum-clad PCB substrates.
Recommended
Welding Inverters
Welding inverter power stages demand high peak currents with low conduction loss — the IGB50N60T's 50 A continuous and 150 A pulsed ratings cover the welding current range of most portable MIG/TIG units. The 600 V VCES handles 380–400 V rectified mains with margin, while the 333 W power dissipation rating supports the high duty cycles typical of stick-welding. The TRENCHSTOP IGBT3's low VCE(sat) reduces thermal stress in the compact, fan-cooled chassis typical of portable welders. The co-packaged diode's soft recovery is essential for the high di/dt transitions seen during arc strikes.
Recommended
Induction Heating Cooktops
Resonant half-bridge or quasi-resonant induction heating stages in kitchen cooktops cycle the IGB50N60T at 20–50 kHz into a litz-wire coil, making low switching loss critical. The TRENCHSTOP IGBT3's 1.7 mJ Ets at 400 V/25 A conditions keeps total switching loss manageable in cooktop-sized converters around 2–3 kW. The 50 A continuous rating easily covers the 20–30 A RMS coil currents at high pan-load conditions, with the 150 A pulsed rating for pan-detection transients. The TO-263 package simplifies SMT manufacturing and is well suited to the small PCB footprint of modern cooktops.
Recommended
Power-Factor-Correction (PFC) Boost Stages
In 600 V PFC boost stages for SMPS, telecom rectifiers, and server front-ends, the IGB50N60T replaces traditional 600 V MOSFETs to gain lower conduction loss at high blocking voltage. Its 600 V VCES withstands 385–400 V DC bus transients with ample margin, while its 50 A rating supports continuous PFC currents in 5–10 kW converter stages. The TRENCHSTOP IGBT3's tail-loss reduction relative to earlier NPT IGBTs enables switching frequencies up to 40 kHz in continuous-conduction-mode (CCM) PFC without unacceptable switching loss. The co-packaged diode eliminates reverse-recovery-induced losses in the boost path.
Recommended
Switched-Mode Power Supply (SMPS) Primary Switch
For 600 V class full-bridge or two-switch-forward SMPS stages in industrial 380–480 VAC input converters, the IGB50N60T serves as a single primary switch in lower-power sub-3 kW stages or as one half of a full bridge above that. The 600 V VCES handles rectified 480 V mains with safe margin, while the 333 W Ptot supports the high-duty-cycle SMPS waveforms with adequate heatsinking. The TRENCHSTOP IGBT3 architecture gives lower switching loss than first-generation IGBTs, allowing higher switching frequencies and smaller magnetic components. The TO-263 surface-mount package suits modern high-density industrial PSU designs.
Recommended
Recommended Products Summary
Engineering reference data for IGB50N60T — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IGB50N60TATMA1 | IKW50N60T |
|---|---|---|---|
| Brand | Infineon | Infineon | Infineon |
| Package | PG-TO263-3-2 (TO-263 / D2Pak, SMT) | PG-TO263-3-2 (TO-263 / D2Pak, SMT) - same | PG-TO247-3 (TO-247, THT) - different footprint |
| Collector-Emitter Voltage (VCES) | 600 V | 600 V | 600 V |
| Continuous DC Collector Current (IC) | 50 A | 50 A | 50 A |
| Pulsed Collector Current (ICM) | 150 A | 150 A | 150 A |
| Total Power Dissipation (Ptot) | 333 W | 333 W | 333 W (TO-247 lowers thermal resistance) |
| Gate-Emitter Threshold (VGE(th) typ) | 5.0 V | 5.0 V | 5.0 V |
| Technology Family | TRENCHSTOP IGBT3 + soft-recovery diode | TRENCHSTOP IGBT3 + soft-recovery diode (same die) | TRENCHSTOP IGBT3 + soft-recovery diode (same die) |
| Mounting Type | Surface Mount | Surface Mount | Through-Hole (TO-247) |
| Approx. 1-pc Distributor Price (USD, 2026-10-08) | $4.10 | ~$4.10 | ~$4.60 |
Key Differentiators
- 600 V / 50 A in TO-263 surface-mount D2Pak — Infineon TRENCHSTOP IGBT3 family (vs IKW50N60T (TO-247 through-hole))
- Integrated soft-recovery emitter-controlled diode (vs Discrete IGBT + external anti-parallel diode (e.g., IDW30E60))
- TRENCHSTOP IGBT3 trench-cell + fieldstop architecture (vs Earlier-generation IKW50N60H NPT IGBT)
Design Notes
Estimated: at IC = 50 A and VCE(sat) ≈ 1.5 V, conduction loss is roughly 75 W per device, plus switching loss of 20–50 W depending on frequency. With a TO-263 junction-to-ambient thermal resistance θJA ≈ 40 °C/W (on a 1 oz, 1 sq-inch copper pad with no heatsink), the junction rise would exceed safe limits — a clip-on heatsink, forced-air cooling, or an aluminum-clad PCB substrate with > 4 sq-inch copper is required. Always derate to keep TJ below 150 °C at worst-case load.
Keep the gate-drive loop (gate–emitter–gate resistor–driver IC) area minimal to suppress ringing — keep the gate resistor within 5 mm of the gate pin. Place a 1 nF to 100 nF ceramic bypass directly at the gate-emitter terminals to suppress Miller-induced turn-on transients. The D2Pak tab is the collector; route the high-current traces wide and short, and add a copper pour tied to the tab for thermal spreading. Use Kelvin connection to the emitter pin (pin 3) for the gate drive return to avoid common-source inductance.
Do not exceed VGES = ±20 V on the gate — even brief transients above this can puncture the gate oxide. Use a 15 V gate-drive supply (or 12 V with reduced performance) and consider a Zener diode between gate and emitter to clamp transient spikes. In half-bridge stages, insert sufficient dead time (typically 1–3 µs for 600 V class IGBTs) to prevent shoot-through — too little dead time risks cross-conduction, too much increases conduction loss on the freewheeling diode. Always check that the bus capacitor ESR and stray inductance do not cause VCES to overshoot the 600 V rating during turn-off.
Compliance Information
RoHS compliant per Infineon product page. Not AEC-Q100 qualified — for automotive-grade applications use an Infineon IGBT with automotive qualification. D2Pak (TO-263) package is MSL Level 1 / 2 standard.
