IGB50N60TATMA1 - 600V 50A Trenchstop IGBT | Infineon | D2PAK
MPN: IGB50N60TATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.85 | $3.85 |
| 10 | $3.42 | $34.20 |
| 100 | $2.88 | $288.00 |
| 500 | $2.51 | $1,255.00 |
| 1,000 | $2.2 | $2,200.00 |
IGB50N60TATMA1 Overview
An IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor that merges the high-input-impedance, voltage-controlled gate of a MOSFET with the high-current, low-saturation-voltage conduction capability of a bipolar junction transistor. In the broader component hierarchy it sits between MOSFETs and thyristors in the discrete-semiconductor family, and within power-electronic systems it acts as the primary switching element in the power stage. IGBTs dominate medium-power (400 V to 1700 V blocking voltage) hard-switched converters where MOSFETs become conduction-loss-limited and BJTs require complex base-drive circuits.
Key features of the IGB50N60TATMA1 include a low VCE(sat) typical of the Trenchstop 3 family, a short-circuit ruggedness of 5 µs minimum at TC = 25 °C and TJ = 150 °C, and a co-packaged anti-parallel diode optimized for hard-switched inductive loads. The TO-263 (D2PAK) package provides a solderable, surface-mount footprint while still exposing a large metal tab for PCB copper-pour heat spreading, enabling heatsink mounting for high-current continuous operation. Switching losses are tuned for hard-switching topologies with typical Eon in the sub-millijoule range.
Architecture-wise, the device uses Infineon's third-generation field-stop (FS) trench gate, which shrinks the drift region thickness and reduces tail-current losses during turn-off. The integrated anti-parallel EmCon3 diode is matched to the IGBT's switching characteristics, suppressing reverse-recovery transients in bridge legs. The wide reverse-bias safe operating area (RBSOA) and square RBSOA allow reliable operation into short-circuit events and inductive snubbers, which is critical for motor and PFC applications.
Typical applications for the IGB50N60TATMA1 include uninterruptible power supplies (UPS), photovoltaic string and micro-inverters, switched-mode power supplies (SMPS) up to several kilowatts, induction heating, welding equipment, and industrial motor drives for HVAC, pumps, and fans. Designers often pair it with 600 V gate drivers such as the 1ED020I12-B2 or EiceDRIVER 2ED020I12 in half-bridge and three-phase inverter configurations.
When designing with this part, carefully observe the maximum lead temperature during soldering (JEDEC J-STD-020 MSL profile) and provide sufficient copper area under the D2PAK tab to keep junction temperature below 150 °C under worst-case continuous load. The 5 µs short-circuit rating demands a fast gate-driver with desaturation (DESAT) protection to safely turn off the device within the rated window.
Drop-in alternatives for IGB50N60TATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
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IGB50N60TATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | Trenchstop IGBT3 |
| Technology | Trench + Field-Stop |
| Collector-Emitter Voltage (VCES) | 600 V |
| Continuous Collector Current (IC) at TC=25°C | 100 A |
| Continuous Collector Current (IC) at TC=100°C | 50 A |
| Pulsed Collector Current (ICM, tp limited by Tjmax) | 150 A |
| Total Power Dissipation (Ptot) at TC=25°C | 333 W |
| Gate-Emitter Threshold Voltage (VGE(th)) | 5.0 V (typ), 6.5 V (max) |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.5 V (typ at VGE=15V, IC=50A, TJ=25°C) |
| Short-Circuit Withstand Time (tsc) | 5 µs min at VCE=360V, TJ≤150°C |
| Operating Junction Temperature | -40 °C to +150 °C |
| Package | PG-TO263-3-2 (D2PAK / TO-263) |
| Mounting Type | Surface Mount |
| Co-packaged Diode | Anti-parallel EmCon3 diode |
| RoHS Status | Compliant |
| MSL Level | 1 |
| Configuration | Single |
IGB50N60TATMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input (voltage-controlled; 0 V off, +15 V on typical) |
| Pin 2 | Collector — Main current terminal (also bonded to the metal tab/back heat-spreader) |
| Pin 3 | Emitter — Common reference for gate drive and main current return |
| Pin TAB | Collector / Thermal Pad — Solderable metal tab; carries the collector current and provides the primary thermal dissipation path to PCB copper pour |
Reverse Bias Safe Operating Area (RBSOA)
Typical Applications
IGB50N60TATMA1 is suitable for 6 applications: Solar String Inverters, Uninterruptible Power Supplies (UPS), Induction Heating Cooktops, Industrial Motor Drives, Welding Power Sources, Switched-Mode Power Supplies (SMPS).
Solar String Inverters
The IGB50N60TATMA1 is a strong fit for 600 V-bus photovoltaic string inverters up to approximately 5 kW. Its 600 V VCES provides adequate margin above the 380-400 V rectified bus of single-phase 230 V grid-tied systems, while the Trenchstop 3 die keeps Eon and Eoff in the sub-millijoule range, helping inverter efficiency exceed 97 percent. The co-packaged EmCon3 diode is specifically tuned for hard-switched boost-PFC and full-bridge legs, suppressing reverse-recovery transients that would otherwise increase EMI filter cost. Designers typically pair the IGB50N60TATMA1 with a 1ED020I12-B2 gate-driver and operate the IGBT at 16-32 kHz. Compared to a 600 V MOSFET solution at this power level, the IGBT cuts conduction losses roughly in half, while a SiC MOSFET would be required only for switching frequencies above 60-80 kHz.
Recommended
Uninterruptible Power Supplies (UPS)
In double-conversion online UPS systems from 2-10 kVA, the IGB50N60TATMA1 handles the inverter and PFC stages at the 600 V bus level. Its 5 µs short-circuit withstand at 360 V VCE and 150 °C junction gives the gate-driver's DESAT protection time to detect a load short and safely turn off the IGBT, which is critical for unattended UPS installations. The 50 A continuous rating covers single-phase 230 V output at 5-6 kVA with comfortable margin; paralleling is straightforward for 10 kVA+ units. The Trenchstop 3 silicon's low VCE(sat) of approximately 1.5 V at 50 A reduces steady-state conduction losses, helping meet 96 percent+ efficiency targets. Designers should add a small RC snubber (10-22 ohm + 10-47 nF) across each switch to control dv/dt-induced ringing in the 600 V bus. Compared to a Gen 4 NPT part like the IRGB4062DPBF, the IGB50N60T typically delivers 10-15 percent lower switching losses in this application.
Recommended
Induction Heating Cooktops
Resonant half-bridge and full-bridge induction cooktop topologies operating at 18-50 kHz are a classic application for the IGB50N60TATMA1. At 220-240 V rectified mains, the 600 V VCES provides comfortable headroom for the resonant tank's switching transients, while the 50 A continuous rating covers 3.5-5 kW cooktops at the design-center load. The Trenchstop 3 die's low Eoff reduces the heat the IGBT must dissipate during each zero-voltage-switching cycle, extending the cooktop's MTBF. The co-packaged EmCon3 diode doubles as the resonant freewheeling path during the cook-top's zero-voltage-switching deadtime, eliminating the need for an external anti-parallel diode. Operated below its thermal derating curve (TJ < 125 °C continuous), the device typically survives 50,000+ power-on hours. Designers should verify the switching frequency stays above the cooktop's resonant frequency to maintain ZVS and avoid hard-switching losses.
Recommended
Industrial Motor Drives
Three-phase variable-frequency drives for HVAC fans, pumps, and small industrial motors up to 7.5 kW are a key application for the IGB50N60TATMA1. The 600 V VCES handles 380-480 V rectified three-phase industrial mains with adequate margin, and the 50 A continuous rating covers 400 V / 16 A rated motors with comfortable overload headroom for the 150 percent short-time overload typical of VFD designs. The 5 µs short-circuit withstand time gives the inverter's DESAT-based protection time to detect a phase-to-phase short or motor winding fault and shut down safely, preventing catastrophic module failure. The Trenchstop 3 silicon's lower switching losses compared to NPT predecessors (about 15-20 percent lower Eon+Eoff) reduce heatsink requirements and enable compact IPM-style integrated designs. Designers should provide 4-6 cm² of 2 oz copper under the D2PAK tab and verify IGBT-to-driver trace length stays under 50 mm for clean gate signals.
Recommended
Welding Power Sources
Inverter-based MMA and MIG welding power sources in the 200-400 A output range, the IGB50N60TATMA1 operates in the secondary-side inverter stage at roughly 100 kHz switching frequency. Its low VCE(sat) of approximately 1.5 V at 50 A limits the steady-state dissipation in this hard-switched secondary, where heatsinking is constrained by the welding torch's weight budget. The co-packaged EmCon3 diode is rated for the high di/dt recovery stress typical of welding transformer leakage inductance, simplifying the inverter layout. The 5 µs short-circuit withstand gives the protection circuit the time it needs to detect a stuck-electrode condition without false tripping during normal arc strikes. Multiple IGB50N60TATMA1 parts are often paralleled in larger 400 A industrial welders, with small source-side ferrite beads balancing static current sharing. Designers should size the DC-link capacitor bank to handle the welding arc's pulsing nature.
Recommended
Switched-Mode Power Supplies (SMPS)
High-power SMPS designs in the 3-10 kW range, including telecom rectifiers, server PSUs, and industrial DIN-rail supplies, often use the IGB50N60TATMA1 in the primary-side PFC or full-bridge converter stages. The 600 V VCES is well-matched to 380-480 V three-phase PFC front ends, while the 50 A continuous rating comfortably covers 5 kW at a 400 V bus with a 25-30 percent design margin. The Trenchstop 3 die's switching-loss profile enables 60-100 kHz operation, allowing a smaller HF transformer and output filter compared to older IGBT generations. The co-packaged diode simplifies full-bridge and two-switch-forward topologies, reducing part count and improving MTBF. For higher switching frequencies (above 100 kHz), a SiC MOSFET such as the IMW120R030M1H may deliver a better figure of merit; for cost-optimized 30-50 kHz designs the IGB50N60T is typically the better choice.
Recommended
Recommended Products Summary
Engineering reference data for IGB50N60TATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IGB50N60SMD | IRGB4062DPBF | IKB20N60TATMA1 | FGH50N60SMD | STGW50NC60W |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | STMicroelectronics |
| Package | PG-TO263-3-2 (D2PAK) | D2PAK - same | D2PAK - same | D2PAK - same | D2PAK - same | D2PAK - same |
| VCES (V) | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous IC at TC=100°C (A) | 50 A | 50 A | 48 A | 20 A | 50 A | 50 A |
| VCE(sat) typ at 50 A, 25°C (V) | 1.5 V | 1.7 V | 1.7 V | 1.5 V (at 20 A) | 1.6 V | 1.6 V |
| Total Power Dissipation (W) | 333 W | 298 W | 250 W | 150 W | 298 W | 310 W |
| Short-Circuit Withstand (µs) | 5 µs | 10 µs | 10 µs | 5 µs | 5 µs | 5 µs |
| Technology Generation | Trenchstop 3 (Trench + Field-Stop) | NPT Gen 4 | NPT Gen 4 | Trenchstop 3 | Trench + Field-Stop | Trench + Field-Stop |
| Co-packaged Diode | Yes (EmCon3) | Yes | Yes | Yes (EmCon3) | Yes | Yes |
Key Differentiators
- Trenchstop 3 (Gen 5) trench + field-stop architecture with EmCon3 co-packaged diode (vs IGB50N60SMD (Infineon NPT Gen 4))
- Tighter VCE(sat) at 50 A (1.5 V typical) (vs STGW50NC60W (STMicroelectronics))
- Established D2PAK supply with broad second-source drop-in alternatives (vs IGB50N60SMD / FGH50N60SMD / STGW50NC60W)
Design Notes
At continuous 50 A conduction in a typical 600 V half-bridge (50 percent duty, 25 °C ambient), the IGB50N60TATMA1 dissipates roughly 75 W internally (50 A × 1.5 V VCE(sat) × 1, duty-corrected). The D2PAK package has a junction-to-case thermal resistance θJC ≈ 0.45 °C/W, so TC will rise roughly 34 °C above the heatsink temperature. For an 80 °C heatsink, plan for TC near 114 °C and TJ near 130 °C - acceptable but tight. To stay below TJ = 125 °C continuous, attach the D2PAK tab to at least 6 cm² of 2 oz copper on a single-sided PCB, or use a small clip-on heatsink with thermal pad. Estimated: based on VCE(sat) = 1.5 V at IC = 50 A and θJC = 0.45 °C/W; verify with the Infineon thermal model in your specific layout. Source: Infineon IGB50N60T datasheet, thermal-resistance table.
Keep the gate-driver-to-IGBT trace under 50 mm total length and avoid crossing the power-loop area. Place a 10-22 ohm gate resistor close to the IGBT gate pin to dampen gate-oscillation and limit di/dt during turn-on. Add a local 100 nF X7R bypass capacitor between VCC (driver) and ground within 5 mm of the driver IC. For the power loop, minimize the DC-link-to-collector and emitter-to-shunt-loop-area to reduce stray inductance below 30 nH; this is critical for keeping turn-off voltage spikes below the 600 V VCES rating. The exposed metal tab of the D2PAK must be soldered to a sufficient copper pour to provide both thermal dissipation and a low-inductance collector connection. Source: Infineon IGB50N60T datasheet, layout guidelines; 1ED020I12-B2 datasheet.
Do not operate the IGB50N60TATMA1 above TJ = 150 °C - the die degrades rapidly and the 5 µs short-circuit withstand shrinks to roughly 3 µs at 150 °C. Always include a DESAT-based gate-driver protection circuit (e.g., 1ED020I12-B2 or 2ED020I12-F2) to detect desaturation within 4 µs and shut down the IGBT. Watch out for shoot-through in half-bridge configurations: introduce at least 500 ns of dead-time between the high-side and low-side gate signals. Do not parallel IGB50N60TATMA1 parts without individual source-side gate resistors (typically 5-10 ohm each) and matched gate-driver paths; unmatched gate impedances cause current imbalance and thermal runaway. Finally, observe MSL1 floor-life rules - even though the part is MSL1, it is still shipped in moisture-barrier bags with desiccant. Source: Infineon IGB50N60T datasheet, application notes; EiceDRIVER 1ED020I12 datasheet.
Compliance Information
RoHS and REACH compliant per Infineon product page. Lead-free reflow compatible per JEDEC J-STD-020 MSL1. AEC-Q100 qualification not applicable for this discrete IGBT - automotive designs should consider AEC-Q101 qualified equivalents or module-level solutions.
