IGB50N60T - 600V 50A TRENCHSTOP IGBT3 TO-263 | Infineon
MPN: IGB50N60T ✓ Hoạt độngIGB50N60T Tóm tắt
An IGBT (Insulated Gate Bipolar Transistor) is a voltage-controlled bipolar power semiconductor that merges the high input impedance of a MOSFET gate with the low conduction losses of a bipolar transistor. Within the discrete power-semiconductor family tree, IGBTs sit between MOSFETs and thyristors: IGBT → bipolar power transistor → discrete semiconductor → power management IC ecosystem. The TRENCHSTOP IGBT3 generation further refined the cell geometry to shrink on-state VCE(sat) and tail losses versus the earlier NPT (non-punch-through) IGBT families.
Key specifications include a collector-emitter breakdown voltage VCES of 600 V, a continuous DC collector current IC of 50 A at TC = 100 °C, a pulsed collector current ICM of 150 A, a gate-emitter threshold VGE(th) of typically 5.0 V, a gate-emitter maximum VGES of ±20 V, and a total switching energy Ets of roughly 1.7 mJ at 400 V/25 A. The integrated soft-recovery emitter-controlled diode eliminates the need for an external anti-parallel diode in most bridge legs, reducing BOM count and PCB area.
Architecturally, the device uses Infineon's third-generation fieldstop trench design: a thin n- drift region field-stops the depletion layer at reverse bias for high blocking voltage with low VCE(sat), while the trench gate increases channel density per unit area. The co-packaged emitter-controlled diode is engineered for soft reverse recovery (low Qrr), suppressing voltage overshoot and EMI in hard-switched bridges such as PFC stages and motor inverters.
Typical applications include uninterruptible power supplies (UPS), solar inverters, welding inverters, induction-heating converters, industrial motor drives, and PFC boost stages in switched-mode power supplies. In a 600 V class PFC or full-bridge converter, the IGB50N60T is normally used at switching frequencies of 8 kHz to 40 kHz, balancing switching loss against magnetic size. Its 50 A continuous rating covers 5 kW to 10 kW single-switch converter stages with adequate thermal design.
When designing with this part, derate the collector current with TC and ensure the heatsink keeps TJ below 150 °C at worst-case load. The co-packaged diode's reverse-recovery behaviour sets the dead-time requirement in half-bridge stages — too short a dead time risks shoot-through, too long increases conduction loss on the freewheeling diode.
Bộ thay thế dễ dàng lắp đặt cho IGB50N60T — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IGB50N60T (cùng hình factor và footprint) — khác nhau ở Mounting Type, Package.
IGB50N60TATMA1
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Xem tài liệu →IGB50N60T Tỷ lệ tối đa & tính chất điện
| Collector-Emitter Voltage (VCES) | 600 V |
| Continuous DC Collector Current (IC, TC=100°C) | 50 A |
| Pulsed Collector Current (ICM, tp limited by Tjmax) | 150 A |
| Total Power Dissipation (Ptot, TC=25°C) | 333 W |
| Gate-Emitter Threshold Voltage (VGE(th), IC=1.2 mA, VCE=VGE) | 5.0 V (typical), 4.5 V min / 6.5 V max |
| Gate-Emitter Voltage Maximum (VGES) | ±20 V |
| Total Switching Energy (Ets, VCC=400 V, IC=25 A, VGE=±15 V) | 1.7 mJ (typical) |
| Short-Circuit Withstand Time (tsc, VCC=360 V, VGE=±15 V, TC=25°C) | 10 µs (typical) |
| Khoảng nhiệt độ mối nối hoạt động | -40 °C to +150 °C |
| Storage Temperature Range | -55 °C to +150 °C |
| Hộp | PG-TO263-3-2 (TO-263 / D2Pak, surface mount) |
| Kiểu lắp đặt | Surface Mount (D2Pak tab acts as drain/collector) |
| Technology Family | TRENCHSTOP IGBT3 with fieldstop and co-packaged soft-recovery emitter-controlled diode |
| Trạng thái RoHS | Compliant |
Cấu hình chân IGB50N60T
| Chân 1 | Gate — MOS-gate control input; driven typically by 15 V gate-drive signal via external gate resistor |
| Chân 2 | Collector — Main power terminal, electrically continuous with the metal back tab; tied to high-voltage bus |
| Chân 3 | Emitter — Common reference for gate drive and source of the co-packaged diode cathode-return path |
| Chân TAB | Collector (back tab) — Electrically identical to pin 2 (Collector); provides thermal path and must be soldered to PCB copper |
Forward Bias Khu vực hoạt động an toàn (FBSOA), TC=25°C, VGE=15V
Ứng dụng tiêu biểu
IGB50N60T phù hợp cho 7 Áp dụngs: Uninterruptible Power Supplies (UPS), Solar String Inverters, Industrial Motor Drives, Welding Inverters, Induction Heating Cooktops, Power-Factor-Correction (PFC) Boost Stages, Switched-Mode Power Supply (SMPS) Primary Switch.
Uninterruptible Power Supplies (UPS)
The IGB50N60T's 600 V VCES, 50 A continuous IC, and 333 W power dissipation rating make it well suited for single-switch PFC and inverter stages in 1–10 kVA UPS systems. Its TRENCHSTOP IGBT3 technology keeps VCE(sat) low enough that a TO-263 footprint can sustain the 5–8 kW power range at typical 16–25 kHz switching frequencies. The co-packaged soft-recovery emitter-controlled diode removes the need for an external anti-parallel diode, simplifying the bridge and reducing PCB parasitic inductance — important for clean switching in online double-conversion UPS topologies.
Được đề xuất
Solar String Inverters
In 600 V class residential and commercial string inverters, the IGB50N60T serves as the primary switching element in PFC boost and full-bridge DC-AC stages. Its 600 V VCES comfortably handles 400 V open-circuit PV strings with 1.5× derating margin, while the 50 A rating supports single-phase inverters up to roughly 8 kW. The TRENCHSTOP IGBT3's low Ets (about 1.7 mJ at 400 V/25 A) limits switching losses at the 16–20 kHz frequencies favored for transformer-isolated designs. The co-packaged soft-recovery diode also reduces conducted and radiated EMI in residential installations.
Được đề xuất
Industrial Motor Drives
For variable-frequency drives (VFD) controlling 230 V / 400 V AC induction motors up to about 7.5 kW, the IGB50N60T handles the hard-switching inverter stage at frequencies of 4–16 kHz. Its 600 V rating survives DC bus transients from regenerative braking, and the 50 A continuous IC rating fits motor current ratings in the 24–30 A range with thermal headroom. The soft-recovery emitter-controlled diode suppresses dv/dt-induced ringing on long motor cables, reducing insulation stress and EMI. The TO-263 surface-mount package enables compact IPM-style drive boards with aluminum-clad PCB substrates.
Được đề xuất
Welding Inverters
Welding inverter power stages demand high peak currents with low conduction loss — the IGB50N60T's 50 A continuous and 150 A pulsed ratings cover the welding current range of most portable MIG/TIG units. The 600 V VCES handles 380–400 V rectified mains with margin, while the 333 W power dissipation rating supports the high duty cycles typical of stick-welding. The TRENCHSTOP IGBT3's low VCE(sat) reduces thermal stress in the compact, fan-cooled chassis typical of portable welders. The co-packaged diode's soft recovery is essential for the high di/dt transitions seen during arc strikes.
Được đề xuất
Induction Heating Cooktops
Resonant half-bridge or quasi-resonant induction heating stages in kitchen cooktops cycle the IGB50N60T at 20–50 kHz into a litz-wire coil, making low switching loss critical. The TRENCHSTOP IGBT3's 1.7 mJ Ets at 400 V/25 A conditions keeps total switching loss manageable in cooktop-sized converters around 2–3 kW. The 50 A continuous rating easily covers the 20–30 A RMS coil currents at high pan-load conditions, with the 150 A pulsed rating for pan-detection transients. The TO-263 package simplifies SMT manufacturing and is well suited to the small PCB footprint of modern cooktops.
Được đề xuất
Power-Factor-Correction (PFC) Boost Stages
In 600 V PFC boost stages for SMPS, telecom rectifiers, and server front-ends, the IGB50N60T replaces traditional 600 V MOSFETs to gain lower conduction loss at high blocking voltage. Its 600 V VCES withstands 385–400 V DC bus transients with ample margin, while its 50 A rating supports continuous PFC currents in 5–10 kW converter stages. The TRENCHSTOP IGBT3's tail-loss reduction relative to earlier NPT IGBTs enables switching frequencies up to 40 kHz in continuous-conduction-mode (CCM) PFC without unacceptable switching loss. The co-packaged diode eliminates reverse-recovery-induced losses in the boost path.
Được đề xuất
Switched-Mode Power Supply (SMPS) Primary Switch
For 600 V class full-bridge or two-switch-forward SMPS stages in industrial 380–480 VAC input converters, the IGB50N60T serves as a single primary switch in lower-power sub-3 kW stages or as one half of a full bridge above that. The 600 V VCES handles rectified 480 V mains with safe margin, while the 333 W Ptot supports the high-duty-cycle SMPS waveforms with adequate heatsinking. The TRENCHSTOP IGBT3 architecture gives lower switching loss than first-generation IGBTs, allowing higher switching frequencies and smaller magnetic components. The TO-263 surface-mount package suits modern high-density industrial PSU designs.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IGB50N60T — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IGB50N60TATMA1 | IKW50N60T |
|---|---|---|---|
| Brand | Infineon | Infineon | Infineon |
| Package | PG-TO263-3-2 (TO-263 / D2Pak, SMT) | PG-TO263-3-2 (TO-263 / D2Pak, SMT) - same | PG-TO247-3 (TO-247, THT) - different footprint |
| Collector-Emitter Voltage (VCES) | 600 V | 600 V | 600 V |
| Continuous DC Collector Current (IC) | 50 A | 50 A | 50 A |
| Pulsed Collector Current (ICM) | 150 A | 150 A | 150 A |
| Total Power Dissipation (Ptot) | 333 W | 333 W | 333 W (TO-247 lowers thermal resistance) |
| Gate-Emitter Threshold (VGE(th) typ) | 5.0 V | 5.0 V | 5.0 V |
| Technology Family | TRENCHSTOP IGBT3 + soft-recovery diode | TRENCHSTOP IGBT3 + soft-recovery diode (same die) | TRENCHSTOP IGBT3 + soft-recovery diode (same die) |
| Mounting Type | Surface Mount | Surface Mount | Through-Hole (TO-247) |
| Approx. 1-pc Distributor Price (USD, 2026-10-08) | $4.10 | ~$4.10 | ~$4.60 |
Bảo phân biệt quan trọng
- 600 V / 50 A in TO-263 surface-mount D2Pak — Infineon TRENCHSTOP IGBT3 family (vsIKW50N60T (TO-247 through-hole))
- Integrated soft-recovery emitter-controlled diode (vsDiscrete IGBT + external anti-parallel diode (e.g., IDW30E60))
- TRENCHSTOP IGBT3 trench-cell + fieldstop architecture (vsEarlier-generation IKW50N60H NPT IGBT)
Ghi chú thiết kế
Estimated: at IC = 50 A and VCE(sat) ≈ 1.5 V, conduction loss is roughly 75 W per device, plus switching loss of 20–50 W depending on frequency. With a TO-263 junction-to-ambient thermal resistance θJA ≈ 40 °C/W (on a 1 oz, 1 sq-inch copper pad with no heatsink), the junction rise would exceed safe limits — a clip-on heatsink, forced-air cooling, or an aluminum-clad PCB substrate with > 4 sq-inch copper is required. Always derate to keep TJ below 150 °C at worst-case load.
Keep the gate-drive loop (gate–emitter–gate resistor–driver IC) area minimal to suppress ringing — keep the gate resistor within 5 mm of the gate pin. Place a 1 nF to 100 nF ceramic bypass directly at the gate-emitter terminals to suppress Miller-induced turn-on transients. The D2Pak tab is the collector; route the high-current traces wide and short, and add a copper pour tied to the tab for thermal spreading. Use Kelvin connection to the emitter pin (pin 3) for the gate drive return to avoid common-source inductance.
Do not exceed VGES = ±20 V on the gate — even brief transients above this can puncture the gate oxide. Use a 15 V gate-drive supply (or 12 V with reduced performance) and consider a Zener diode between gate and emitter to clamp transient spikes. In half-bridge stages, insert sufficient dead time (typically 1–3 µs for 600 V class IGBTs) to prevent shoot-through — too little dead time risks cross-conduction, too much increases conduction loss on the freewheeling diode. Always check that the bus capacitor ESR and stray inductance do not cause VCES to overshoot the 600 V rating during turn-off.
Thông tin tuân thủ
RoHS compliant per Infineon product page. Not AEC-Q100 qualified — for automotive-grade applications use an Infineon IGBT with automotive qualification. D2Pak (TO-263) package is MSL Level 1 / 2 standard.
