IR2110SPBF - 500V Half-Bridge Gate Driver IC | Infineon
MPN: IR2110SPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.52 | $3.52 |
| 10 | $3.16 | $31.60 |
| 100 | $2.62 | $262.00 |
| 500 | $2.27 | $1,135.00 |
| 1,000 | $1.98 | $1,980.00 |
IR2110SPBF Overview
A half-bridge gate driver IC is a specialized power-management semiconductor that translates low-voltage logic commands (from a microcontroller or DSP) into the high-current, floating high-side gate-drive pulses required to switch the upper MOSFET or IGBT in a half-bridge, three-phase, or full-bridge power stage. The IR2110 belongs to the gate driver IC -> power management IC -> semiconductor hierarchy, and represents one of the most widely adopted half-bridge driver platforms in the industry since its introduction by International Rectifier (now part of Infineon).
Key electrical features include a gate-drive supply range of 10 V to 20 V (logic-only operation tolerates 3.3 V), a maximum Voffset of 500 V on the high side, typical propagation delay of 94 ns (50 ns typical ton/toff match), 2 A peak output current, and built-in deadtime/undervoltage lockout for both supply rails. The logic inputs are compatible with standard CMOS or LSTTL outputs down to 3.3 V, eliminating the need for level-shifting interface circuitry. Latch-immune CMOS construction provides ruggedness against dv/dt-induced parasitic turn-on, a common failure mode in noisy bridge environments.
The high-voltage level-shift stage uses proprietary HVIC technology monolithically integrated with the low-side circuitry. The bootstrap diode, integrated between Vcc and VCC pins, allows a single supply voltage to drive both the low-side switch directly and the high-side switch through an external bootstrap capacitor. Undervoltage lockout (UVLO) on both Vcc and VCC prevents the gate driver from operating when the supply rails are insufficient to fully enhance the power MOSFET/IGBT, avoiding partial-conduction losses.
Typical applications include three-phase motor drives (BLDC/PMSM), half-bridge and full-bridge DC-DC converters, HVAC compressor inverters, uninterruptible power supplies (UPS), Class-D audio amplifiers, and switched-mode power supplies. The wide Voffset rating also suits PFC boost stages and solar microinverters operating from rectified 230 VAC/400 V rails.
When designing with the IR2110, place the bootstrap capacitor (typically 0.1-1 Β΅F ceramic) as close as possible to the VCC and VB pins, and confirm that Vb is refreshed on every low-side cycle. Without refresh, the high-side gate cannot stay above UVLO during long 100% duty cycles. The 16-SOIC exposed-pad variant exists for higher thermal dissipation but the IR2110SPBF is the standard SOIC-16 (DW) version.
This page synthesizes distributor pricing, drop-in equivalents (IR2110STRPBF, IR2110PBF, IR2113SPBF, IR2110-2PBF), practical bootstrap and UVLO design notes, and BOM-optimization guidance that is not assembled in any single manufacturer document.
Drop-in alternatives for IR2110SPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IR2110STRPBF
β Drop-Inπ Reference alternative (not in catalog)
IR2110-2PBF
β Drop-Inπ Reference alternative (not in catalog)
IR2113SPBF
β Drop-Inπ Reference alternative (not in catalog)
IR2110SPBF Maximum Ratings & Electrical Characteristics
| Function | Half-bridge gate driver |
| Topology | High-side and low-side referenced output channels |
| Number of Channels | 2 (1 high-side, 1 low-side) |
| Logic Type | Non-inverting |
| Maximum Offset Voltage (Voffset) | 500 V |
| Gate Drive Supply Voltage (Vcc/VCC) | 10 V to 20 V |
| Peak Output Current (source/sink) | 2.0 A / 2.0 A |
| Typical Propagation Delay (ton/toff) | 94 ns / 94 ns |
| Rise/Fall Time (typical) | 25 ns / 17 ns |
| Logic Input Compatibility | 3.3 V CMOS / LSTTL |
| Bootstrap Diode | Integrated |
| Undervoltage Lockout (UVLO) | Yes, both Vcc and VCC |
| Operating Temperature Range | -40 C to +125 C |
| Package | 16-pin SOIC (SO-16, DW suffix) |
| Mounting Type | Surface Mount |
| Technology | HVIC + latch-immune CMOS |
| Lead-Free / RoHS | Yes / Compliant (Pb-free PBF suffix) |
IR2110SPBF Pin Configuration
| Pin 1 | LO β Low-side gate drive output |
| Pin 2 | NC β Not connected |
| Pin 3 | VSS β Logic ground |
| Pin 4 | NC β Not connected |
| Pin 5 | NC β Not connected |
| Pin 6 | VS β High-side floating supply return |
| Pin 7 | VB β High-side bootstrap supply |
| Pin 8 | HO β High-side gate drive output |
| Pin 9 | NC β Not connected |
| Pin 10 | NC β Not connected |
| Pin 11 | VCC β Low-side gate drive supply |
| Pin 12 | NC β Not connected |
| Pin 13 | VDD β Logic supply (3.3 V or 5 V) |
| Pin 14 | HIN β Logic input for high-side output (non-inverting) |
| Pin 15 | SD β Shutdown (active-low) |
| Pin 16 | LIN β Logic input for low-side output (non-inverting) |
Typical Applications
IR2110SPBF is suitable for 6 applications: Three-Phase BLDC / PMSM Motor Drive, Half-Bridge / Full-Bridge DC-DC Converter, HVAC Compressor Inverter, Uninterruptible Power Supply (UPS) Inverter Stage, Class-D Audio Amplifier Output Stage, PFC Boost Converter.
Three-Phase BLDC / PMSM Motor Drive
The IR2110SPBF is a de-facto industry reference driver for three-phase BLDC/PMSM inverter stages because its 500 V Voffset handles rectified 230 VAC/400 V bus rails and its 2 A peak source/sink current charges 1-5 nC MOSFET gate capacitances in tens of nanoseconds. Three IR2110SPBF chips drive six IGBTs/MOSFETs in a full three-phase bridge, each with its own bootstrap capacitor refreshing the high-side rail every low-side cycle. The integrated bootstrap diode eliminates external HV diodes, reducing BOM and PCB area; the 94 ns propagation delay ensures tight PWM synchronization from 3.3 V microcontroller logic. According to the datasheet, the latch-immune HVIC construction prevents dv/dt-induced parasitic turn-on even at 50 kHz switching frequencies.
Recommended
Half-Bridge / Full-Bridge DC-DC Converter
For half-bridge and full-bridge DC-DC converters operating from a 200-400 V DC bus, the IR2110SPBF's 500 V Voffset rating and integrated bootstrap diode directly support phase-shifted full-bridge, hard-switched half-bridge, and LLC topologies driving 600 V MOSFETs. Two IR2110SPBF chips drive a full-bridge (4 switches) with no extra level-shifting logic; the 10-20 V VCC supply is generated by a small auxiliary flyback or linear regulator. The 2 A peak output current supports MOSFETs with Qg up to 100 nC at switching frequencies of 50-200 kHz. Built-in UVLO on both VCC and VCC prevents partial-conduction during startup, and the 3.3 V logic-input compatibility allows direct PWM from modern DSP controllers without external level shifters.
Recommended
HVAC Compressor Inverter
HVAC compressor inverters for residential air conditioning operate from rectified 230 VAC rails (approximately 325 V DC) and drive three-phase PMSM compressors in the 0.5-3 kW range. The IR2110SPBF's 500 V Voffset provides sufficient margin for 230 VAC PFC boost output, while its 2 A peak current drives 600 V/650 V IGBTs commonly used in HVAC modules. The integrated bootstrap diode reduces PCB area in space-constrained outdoor unit inverter boards, and the -40 C to +125 C operating range covers outdoor temperature extremes. The 94 ns propagation delay ensures accurate sinusoidal PWM generation for low-vibration, high-efficiency variable-speed compressor control. According to manufacturer reference designs, three IR2110SPBF devices are typically used per three-phase HVAC inverter module.
Recommended
Uninterruptible Power Supply (UPS) Inverter Stage
Online UPS systems use double-conversion topologies where the IR2110SPBF drives the DC-AC inverter stage that converts a 384 V DC bus into 50/60 Hz mains-equivalent AC output. The 500 V Voffset rating is ideal for low-voltage (230 VAC) UPS modules and supports IGBTs rated at 600 V. Three IR2110SPBF chips drive a full three-phase inverter, while the integrated UVLO ensures the IGBTs cannot turn on during low-battery operation, preventing catastrophic shoot-through. The 3.3 V CMOS logic inputs interface directly with digital signal controllers used for sine-PWM generation. The latch-immune HVIC technology provides dv/dt immunity for the noisy switching environment inside a UPS enclosure.
Recommended
Class-D Audio Amplifier Output Stage
The IR2110SPBF is a popular driver for high-power Class-D audio amplifiers where it drives a half-bridge output stage delivering 100-500 W per channel from a Β±50 V or BTL bus. Its 500 V Voffset rating supports the high BTL supply rails used in subwoofer amplifiers, and its 2 A peak gate current enables switching frequencies of 250-500 kHz required for low-distortion audio. The low propagation delay (94 ns) and matched high-side/low-side timing ensure minimal deadtime distortion. The integrated bootstrap diode saves PCB area in multi-channel amplifier modules. The wide 10-20 V gate-drive supply accommodates MOSFETs with high gate-charge requirements while keeping switching losses low.
Recommended
PFC Boost Converter
The IR2110SPBF is widely used as the high-side gate driver in power-factor-correction (PFC) boost converters operating from rectified 85-265 VAC mains. Its 500 V Voffset easily handles the 400 V PFC output voltage, and its 2 A peak source/sink current drives 600 V MOSFETs and SiC diodes in continuous-conduction-mode (CCM) PFC stages. The integrated bootstrap diode is particularly valuable in PFC applications where external HV diodes add cost and reverse-recovery losses. Per the datasheet, the IR2110's latch-immune HVIC technology tolerates the high dv/dt of PFC boost switching transitions without false triggering. The 3.3 V logic compatibility allows direct control by DSP-based PFC controllers.
Recommended
Recommended Products Summary
Engineering reference data for IR2110SPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IR2110STRPBF | IR2110-2PBF | IR2113SPBF | IRS21867STRPBF | IR2109SPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | 16-SOIC | 16-SOIC (identical) | 16-SOIC (identical) | 16-SOIC (identical) | 8-SOIC (different footprint) | 8-SOIC (different footprint) |
| Maximum Voffset | 500 V | 500 V | 500 V | 500 V | 600 V | 600 V |
| Peak Output Current | 2.0 A / 2.0 A | 2.0 A / 2.0 A | 2.0 A / 2.0 A | 2.0 A / 2.0 A | 4.0 A / 4.0 A | 0.6 A / 0.6 A |
| Propagation Delay (typ) | 94 ns | 94 ns | 94 ns | 94 ns | 170 ns | 140 ns |
| Integrated Bootstrap Diode | Yes | Yes | Yes | Yes | No (external required) | Yes |
| Undervoltage Lockout | Yes (Vcc and VCC) | Yes | Yes | Yes | Yes | Yes |
| Internal Deadtime | No (external controlled) | No | No | Yes (fixed) | Yes (fixed) | Yes (fixed) |
Key Differentiators
- Integrated bootstrap diode eliminates external HV diode (vs IRS21867STRPBF)
- Industry-standard 16-SOIC pinout with mature second-source ecosystem (vs IR2109SPBF (SOIC-8))
- External deadtime control for advanced PWM strategies (vs IR2113SPBF)
Design Notes
Bootstrap capacitor sizing is critical for IR2110SPBF designs. Use a 0.1-1 Β΅F low-ESR ceramic capacitor (X7R/X7S) between VB and VS, as close to the pins as possible. The capacitor must be large enough to hold VCC above the UVLO threshold during the high-side on-time; insufficient capacitance causes the high-side gate to drop out under load, creating shoot-through or partial-conduction failures. A safe rule is Cboot >= (Qg,total * VCC_drop) / (VCC - Vf_bootstrap - UVLO_margin); for typical 100 nC Qg MOSFETs at 50 kHz, 0.47 Β΅F is a robust starting point. Without a refresh path (i.e., continuous low-side pulsing), the bootstrap capacitor will discharge and the high-side driver will lose gate drive - critical for 100% duty-cycle applications.
PCB layout for the IR2110SPBF must keep the high-current gate-drive loop (HO to gate, gate to VS return) and the low-current floating supply loop (VB to VS) areas minimized to suppress ringing and dv/dt-induced parasitic turn-on. Place the bootstrap capacitor within 5 mm of pins 7 (VB) and 6 (VS). Use a ground plane under the IC for VSS/VCC decoupling (100 nF ceramic + 1 Β΅F tantalum in parallel). Per the Infineon datasheet, keeping the high-side switching loop compact reduces EMI and improves the driver's noise immunity. A 4-layer board with a dedicated ground plane is strongly recommended above 100 kHz switching frequencies.
VCC supply selection for the IR2110SPBF must account for the bootstrap refresh current and gate-charge losses. A 12-15 V regulated supply from an isolated flyback or bootstrap winding is standard; below 10 V, UVLO trips and the driver enters fault mode; above 20 V, the absolute-maximum VCC rating (25 V) limits operation. A 100 nF ceramic decoupling capacitor directly on VCC (pin 11) and a 1 Β΅F bulk capacitor near the driver are recommended. Estimate: power dissipation in the IR2110SPBF = VCC * (Qg,total * fsw + I_qcc), where I_qcc is the quiescent current (typically 1-2 mA). At 50 kHz with 100 nC total Qg, P_diss β 12 V * (100 nC * 50 kHz + 1.5 mA) = 60 mW + 18 mW β 78 mW, easily handled by the SOIC-16 package.
Compliance Information
The PBF suffix denotes lead-free (Pb-free) plating compliant with RoHS and REACH directives. The IR2110SPBF is not AEC-Q100 qualified - for automotive motor drives use the IR2110SPBF-Q1 (automotive qualified) variant.
