Infineon

IKW20N60TFKSA1 - 600V 20A TrenchStop IGBT | Infineon TO-247

MPN: IKW20N60TFKSA1 βœ“ Active
In Stock Ships in 1-3 business days
600 V Vdss 40 A Id [DATA_NEEDED: trr value] Package
From $2.15 USD / Unit
MOQ: 1 |
Price updated: 2026-09-13
Volume Pricing
Qty Unit Price Extended
1 $3.85 $3.85
10 $3.45 $34.50
100 $2.92 $292.00
500 $2.48 $1,240.00
1,000 $2.15 $2,150.00
ℹ️ All prices are in USD

Drop-in alternatives for IKW20N60TFKSA1 β€” same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool β€” Select alternative parts for side-by-side comparison:

IKW20N60H3FKSA1

βœ… Drop-In
πŸ“¦ TO-247-3
newer TRENCHSTOP 5 generation, ~20-30% lower switching losses, softer diode recovery, same pinout

πŸ“‹ Reference alternative (not in catalog)

IKW20N60T

βœ… Drop-In
πŸ“¦ TO-247-3
same die, different ordering code (tube vs T&R packaging variant), electrically identical

πŸ“‹ Reference alternative (not in catalog)

IKW30N60H3FKSA1

βœ… Drop-In
πŸ“¦ TO-247-3
higher current rating (30 A vs 20 A, +50% Ic), same 600 V and pinout, larger die

πŸ“‹ Reference alternative (not in catalog)

IKW40N120H3FKSA1

βœ… Drop-In
πŸ“¦ TO-247-3
higher voltage class (1200 V vs 600 V, +100%), lower current (~40 A continuous at 1200 V), same package

πŸ“‹ Reference alternative (not in catalog)

IKW50N65H5FKSA1

βœ… Drop-In
Infineon
πŸ“¦ TO-247-3
Infineon Technologies Β· IGBT Single Transistor Β· TRENCHSTOP 5 (H5 high-speed family) Β· 650 V Β· 80 A Β· 50 A Β· [DATA_NEEDED: ICM value] Β· 305 W

βœ“ In Stock

$5.45 / Unit

View Datasheet β†’

STGW20NC60VD

βœ… Drop-In
πŸ“¦ TO-247-3
cross-brand ST equivalent, 600 V 20 A co-packaged IGBT-diode, similar Vce(sat), slightly different diode trr

πŸ“‹ Reference alternative (not in catalog)

FGH20N60SMD

βœ… Drop-In
πŸ“¦ TO-247-3
cross-brand onsemi equivalent, 600 V 20 A Field Stop IGBT with co-packaged diode, same pinout

πŸ“‹ Reference alternative (not in catalog)

IKW20N60TFKSA1 Maximum Ratings & Electrical Characteristics

Manufacturer Infineon Technologies
Part Number IKW20N60TFKSA1
Part Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) Max @ 25C 40 A
Current - Collector (Ic) Continuous 20 A
Power - Max 166 W
Operating Temperature Junction (Tj) -40C to +175C
Package / Case TO-247-3 (PG-TO247-3-1)
Mounting Type Through Hole
Diode Configuration Anti-parallel (co-packaged, full-rated)
RoHS Status Compliant
Technology Family TRENCHSTOP IGBT3

IKW20N60TFKSA1 Pin Configuration

TO-247 Package Pinout Diagram TO-247 3-pin vertical mount large tab, JEDEC. 1 2 3 TO-247
Pin 1 Gate (G) β€” Gate drive input, typically driven to +15 V on, 0 to -15 V off
Pin 2 Collector (C) β€” Power collector terminal, connected to high-voltage DC bus positive rail
Pin 3 Emitter (E) β€” Power emitter terminal, returns to DC bus negative (or PFC midpoint)

Forward Bias Safe Operating Area (FBSOA)

DC Continuous Operation

Typical Applications

IKW20N60TFKSA1 is suitable for 6 applications: Uninterruptible Power Supplies (UPS), Solar String Inverters, Industrial Motor Drives (VFD), Welding Power Supplies, Power Factor Correction (PFC) Stages, Induction Heating Cooktops.

⚑

Uninterruptible Power Supplies (UPS)

The IKW20N60TFKSA1 fits UPS inverter stages that convert rectified 400 V DC bus into 230 V AC at 20 A continuous. Its 600 V Vce(s) rating provides 50% derating margin on a 400 V rectified bus, while the co-packaged Emitter Controlled Diode eliminates external freewheeling rectifiers and minimizes commutation-loop inductance. The TRENCHSTOP IGBT3 generation's low Vce(sat) (typical ~1.5 V at rated current) reduces conduction loss compared to planar NPT IGBTs of the same current class, improving inverter efficiency by 1-2% at full load. Designers use it in online double-conversion UPS units rated 5-10 kVA.

πŸ”§

Solar String Inverters

In transformerless string inverters the IKW20N60TFKSA1 serves as the H-bridge or HERIC switching element operating from a 400-600 V DC link. Its positive temperature coefficient of Vce(sat) makes parallel-device modules easy to balance thermally when multiple IKW20N60TFKSA1 are paralleled for higher-power 5-10 kW single-phase inverters. The co-packaged soft-recovery diode reduces EMI from diode reverse-recovery, allowing relaxed snubber design and lower switching losses. Industrial-grade operating junction range (-40C to +175C) handles outdoor inverter thermal environments with conservative heatsinking.

🏭

Industrial Motor Drives (VFD)

Variable-frequency drives (VFDs) for 3-phase induction motors in the 5-10 HP range use the IKW20N60TFKSA1 in the inverter-stage IGBT bridge. With 20 A continuous current it matches 230 V 3-phase motors up to about 4 kW and 400 V 3-phase motors up to 7.5 kW. The TRENCHSTOP IGBT3's square reverse-bias safe operating area (RBSOA) supports the inductive-switching transients of motor winding commutation without failure. Its low Vce(sat) reduces total inverter conduction loss, contributing to drive efficiency above 97% in well-designed 3-level topologies up to ~15 kHz switching frequency.

🏭

Welding Power Supplies

Inverter-based MIG/TIG welders require robust IGBTs capable of high peak currents and hard-switching at moderate frequencies. The IKW20N60TFKSA1's 40 A pulsed collector current rating supports the repetitive surge currents seen during arc-strike and short-circuit transfer in welding waveforms, while its co-packaged fast-recovery diode handles free-wheeling energy back to the DC link. The TO-247-3 package's low thermal resistance (junction-to-case around 0.75 C/W) allows compact heatsink designs in portable welders. Designers appreciate the positive Vce(sat) temperature coefficient which prevents thermal runaway when paralleling devices for higher welding current.

⚑

Power Factor Correction (PFC) Stages

Bridgeless PFC front-ends for industrial SMPS and EV chargers up to about 5 kW use the IKW20N60TFKSA1 as the boost-switch element on a 400 V DC output bus. Its 600 V breakdown supports the peak rectified-line voltage with margin and the co-packaged diode simplifies continuous-conduction-mode (CCM) PFC topology. The IGBT3 generation's lower switching loss than older NPT IGBTs allows PFC switching frequencies up to 30 kHz with manageable efficiency, reducing magnetics size. Soft turn-off behavior reduces EMI filter complexity in PFC power supplies targeting EN 61000-3-2 compliance for harmonic current limits.

🏭

Induction Heating Cooktops

Induction cooktop inverters operating at 20-50 kHz from a rectified mains bus use the IKW20N60TFKSA1 as the resonant half-bridge switching element driving the induction coil. Its co-packaged fast-recovery diode handles the resonant tank free-wheeling current, while the low Vce(sat) and positive temperature coefficient keep conduction losses low when the part heats during continuous cooking operation. The 600 V rating is comfortable for 230 V mains rectified (peak ~325 V) and the 166 W power dissipation rating gives thermal margin for the cooktop's compact heatsink design. TRENCHSTOP IGBT3's square RBSOA provides robustness against the resonant-load transients typical in induction cooking.

Recommended Products Summary

IKW20N60H3FKSA1 Higher-efficiency successor IGBT in same package Used in: Uninterruptible Power Supplies (UPS), Welding Power Supplies, Power Factor Correction (PFC) Stages IKW50N65H5FKSA1 Infineon Used in: Uninterruptible Power Supplies (UPS) IKW30N60H3FKSA1 Higher-current variant for 10 kW+ string inverters Used in: Solar String Inverters, Industrial Motor Drives (VFD), Induction Heating Cooktops IKW40N120H3FKSA1 1200 V class companion for 1000 V DC link systems Used in: Solar String Inverters IFX9201SGAUMA1 Infineon Used in: Industrial Motor Drives (VFD), Welding Power Supplies, Induction Heating Cooktops ICE3AS03LJGXUMA1 Infineon Used in: Power Factor Correction (PFC) Stages
What is the maximum collector-emitter voltage of IKW20N60TFKSA1?
The IKW20N60TFKSA1 has a maximum collector-emitter breakdown voltage (Vces) of 600 V. This 600 V class rating makes the part suitable for 400 V AC rectified-bus and 480 V nominal industrial input applications with appropriate derating. According to Infineon's IKW20N60T datasheet, the part targets hard-switching topologies operating up to a switching frequency of approximately 30 kHz at this voltage class.
What is the continuous collector current rating of IKW20N60TFKSA1?
The IKW20N60TFKSA1 is rated for 20 A continuous collector current (Ic) at a defined case temperature, with a pulsed collector current rating of 40 A. According to the Infineon datasheet, this corresponds to the IGBT3 Trenchstop Low Loss DuoPack family, and the 20 A continuous rating at TC=100C is a standard figure for this part in industrial power-conversion applications such as UPS and motor drives.
Does IKW20N60TFKSA1 include an anti-parallel diode?
Yes, the IKW20N60TFKSA1 is co-packaged with a full-rated anti-parallel Emitter Controlled Diode (ECD) inside the same TO-247-3 package. This eliminates the need for an external free-wheeling diode in half-bridge and full-bridge topologies, simplifying PCB layout, reducing loop inductance, and improving overall efficiency in hard-switching applications. The diode is rated to match the IGBT current class.
What is the difference between IKW20N60T and IKW20N60TFKSA1?
The IKW20N60T and IKW20N60TFKSA1 refer to the same 600 V 20 A TRENCHSTOP IGBT3 die in the TO-247-3 package; the TFKSA1 suffix is Infineon's ordering code for the tube-packaged shipping format (versus tape-and-reel). According to the Infineon product family, both designations share identical electrical specifications, pinout, and thermal performance, and they are interchangeable on the PCB.
What package does IKW20N60TFKSA1 use?
The IKW20N60TFKSA1 is housed in the TO-247-3 (Infineon part designation PG-TO247-3-1) three-lead through-hole package with a metal tab that provides both electrical connection (Collector) and the primary thermal path to an external heatsink. The package follows JEDEC TO-247 outline dimensions and is widely accepted in industrial power-conversion designs with standard PCB mounting hardware.
Where to buy IKW20N60TFKSA1 online?
The IKW20N60TFKSA1 can be purchased from authorized distributors including Mouser, DigiKey, and Octopart-listed suppliers, with stock also available from XAIPART. As of 2026-09-13, distributor pricing starts around $3.85 per unit at qty 1 with significant volume discounts at qty 1000+ (approximately $2.15 each). Heisener reported 6,432 units in stock at last check, indicating healthy global availability.
What is the price of IKW20N60TFKSA1?
As of 2026-09-13, the IKW20N60TFKSA1 lists at approximately $3.85 per unit at qty 1, dropping to around $3.45 at qty 10, $2.92 at qty 100, $2.48 at qty 500, and approximately $2.15 at qty 1000 from major distributors like Mouser, DigiKey, and Octopart-listed suppliers. Volume pricing is typical for TRENCHSTOP IGBT3 family members and tends to fluctuate with silicon wafer market conditions.
Is IKW20N60TFKSA1 in stock?
Yes, as of 2026-09-13 the IKW20N60TFKSA1 is in stock at multiple distributors including Mouser, DigiKey, Heisener (6,432 units reported), and Octopart-listed suppliers. The part is in active production status per Infineon's product lifecycle classification, indicating no near-term supply risk for industrial customers. Lead time for the TO-247-3 tube-packaged variant is typically 6-12 weeks from the manufacturer.
IKW20N60TFKSA1 vs STGW20NC60VD - which is better for a PFC stage?
The IKW20N60TFKSA1 (Infineon, 600 V 20 A, TRENCHSTOP IGBT3 with co-packaged ECD) and STGW20NC60VD (STMicroelectronics, 600 V 20 A, PowerMESH IGBT) are both 20 A co-packaged IGBTs targeting PFC stages. The Infineon part typically offers lower Vce(sat) and softer recovery of its co-packaged diode, while the ST part may offer faster switching. For hard-switching PFC up to 25 kHz, the IKW20N60TFKSA1 is generally preferred for lower conduction loss.
What is the difference between IKW20N60TFKSA1 and IKW20N60H3FKSA1?
The IKW20N60TFKSA1 is part of Infineon's TRENCHSTOP IGBT3 generation with low-loss field-stop design, while the IKW20N60H3FKSA1 is from the newer TRENCHSTOP 5 / HighSpeed3 generation offering further reduced switching losses and improved diode softness. The H3 version targets higher-frequency hard-switching (>20 kHz) applications. Both share the same TO-247-3 package, making the H3 a pin-compatible upgrade path with improved efficiency.
When should I choose IKW20N60TFKSA1 over SKW20N60FKSA1?
The IKW20N60TFKSA1 (TO-247-3, 20 A) and SKW20N60FKSA1 (TO-247-3, 20 A) are both Infineon 600 V 20 A co-packaged IGBTs sharing the same package and pinout. Choose IKW20N60TFKSA1 when you need the proven TRENCHSTOP IGBT3 generation with widely characterized application data; choose SKW20N60FKSA1 if you specifically need a high-speed variant or different switching-loss optimization for your topology. Both are drop-in compatible on the same PCB footprint.
What is the best drop-in replacement for IKW20N60TFKSA1?
The best drop-in replacement for the IKW20N60TFKSA1 is the IKW20N60H3FKSA1 (Infineon, same TO-247-3 package, TRENCHSTOP 5 generation with improved switching loss and softer diode). For cross-brand drop-in equivalents, the STGW20NC60VD (STMicroelectronics, TO-247-3) and FGH20N60SMD (onsemi, TO-247) are widely used substitutes sharing the same package footprint and pinout, though with slight Vce(sat) and diode recovery trade-offs.
Can IKW20N60H3FKSA1 replace IKW20N60TFKSA1 directly?
Yes, the IKW20N60H3FKSA1 is a direct drop-in replacement for the IKW20N60TFKSA1 in the same TO-247-3 package with identical pinout (Gate-Collector-Emitter). The H3 variant (TRENCHSTOP 5) is a newer-generation die with lower switching losses and a softer co-packaged diode, so it can be soldered onto the same PCB land pattern. Designers typically see a small efficiency improvement with the H3 part without any circuit changes.
Where to download IKW20N60TFKSA1 datasheet PDF?
The official Infineon IKW20N60TFKSA1 datasheet can be downloaded as a PDF from the Infineon product page at infineon.com (part IKW20N60T) or via the DigiKey product page (linked to Infineon's secure PDF server). Third-party datasheet mirrors are available on datasheets.com and digchip.com, but for engineering reference the Infineon-hosted PDF is the authoritative source. The datasheet includes SOA curves, switching loss graphs, thermal resistance, and recommended gate-drive values.
What are the key specifications of IKW20N60TFKSA1 that engineers should know?
The IKW20N60TFKSA1 is a 600 V / 20 A continuous (40 A pulsed) TRENCHSTOP IGBT3 with co-packaged Emitter Controlled Diode in TO-247-3 through-hole package, maximum power dissipation 166 W, junction temperature range -40C to +175C, and RoHS compliant. Key parametric anchors are Vce(sat) in the low-V range with positive temperature coefficient for safe paralleling, very soft fast-recovery co-packaged diode, and Easy parallel switching capability. Designers should consult the Infineon datasheet SOA curves before committing to a heatsink design.

Engineering reference data for IKW20N60TFKSA1 β€” comparison, design guidance, and compliance information.

Selection Guide

Choose the IKW20N60TFKSA1 when you need a proven, widely-available 600 V / 20 A co-packaged IGBT-diode for hard-switching industrial applications at switching frequencies up to 30 kHz (UPS, motor drives, PFC, welding, induction heating). Its TRENCHSTOP IGBT3 generation offers an excellent balance of low Vce(sat), low switching loss, and a soft-recovery co-packaged diode. For new designs at higher switching frequencies, choose the IKW20N60H3FKSA1 (TRENCHSTOP 5) instead - it offers reduced switching loss and softer diode recovery in the same TO-247-3 footprint. For cross-brand second sourcing, the STGW20NC60VD (STMicroelectronics) and FGH20N60SMD (onsemi) are pin-compatible equivalents sharing the same TO-247-3 outline, though with slightly different Vce(sat) and diode recovery characteristics. All four drop-in alternatives are interchangeable on the same PCB land pattern, simplifying BOM decisions.

Comparison with Alternatives

Parameter This Product IKW20N60H3FKSA1 IKW20N60T STGW20NC60VD FGH20N60SMD
Package TO-247-3 TO-247-3 - same TO-247-3 - same TO-247-3 - same TO-247-3 - same
Brand Infineon Infineon Infineon STMicroelectronics onsemi
Collector-Emitter Voltage (Vces) 600 V 600 V 600 V 600 V 600 V
Continuous Collector Current (Ic) 20 A 20 A 20 A 20 A 20 A
IGBT Generation TRENCHSTOP IGBT3 TRENCHSTOP 5 (H3) TRENCHSTOP IGBT3 (same die) PowerMESH IGBT Field Stop IGBT
Co-packaged Diode Yes (Emitter Controlled Diode) Yes (softer recovery) Yes Yes Yes
Power Dissipation Max 166 W [DATA_NEEDED] 166 W [DATA_NEEDED] [DATA_NEEDED]
Unit Price (qty 100) $2.92 [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole

Key Differentiators

  • Co-packaged Emitter Controlled Diode (ECD) with very soft recovery (vs IKW20N60H3FKSA1 (newer generation))
  • Proven TRENCHSTOP IGBT3 generation with extensive application data (vs STGW20NC60VD)
  • Wide availability with active lifecycle status (vs FGH20N60SMD)

Design Notes

Estimated: with Vce(sat) of approximately 1.5 V at 20 A continuous, the conduction loss is roughly 30 W (Vce x Ic). Adding switching losses of approximately 0.5-1 mJ per cycle at 20 kHz yields 10-20 W additional loss. Total dissipation of 40-50 W at TC=25C requires a heatsink with thermal resistance below 1.0 C/W to keep junction-to-ambient rise below 50 C. Use thermal interface material rated for the 175 C maximum junction temperature and verify the heatsink's Rth(sa) on the actual mounting orientation (vertical vs horizontal).

Minimize commutation loop inductance between the DC-link bus, the IGBT collector/emitter terminals, and the co-packaged diode. Keep the DC-link film capacitor as close as physically possible to the TO-247 leads. Add a small RC snubber (typically 10-100 ohm in series with 0.1-1 nF) across collector-emitter to damp voltage overshoot from stray inductance during turn-off. Use a kelvin (emitter-sense) connection from pin 3 directly to the gate-driver return to eliminate source-inductance effects on gate-drive timing.

Always apply negative gate-emitter bias (typically -5 to -15 V) during the IGBT off state. Without negative bias, the Miller-effect dV/dt during turn-on of the complementary IGBT in a half-bridge can falsely turn on the IKW20N60TFKSA1 via its Cge capacitance, causing shoot-through and catastrophic failure. Also ensure the gate-drive supply can source/sink the specified gate-charge current (typically 1-2 A peak during switching transients). A standard 78xx linear regulator is NOT adequate; use a dedicated isolated gate-drive supply or bootstrap circuit.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Compliant

RoHS compliance per Infineon product page. Not AEC-Q100 qualified (industrial/commercial part, not automotive-grade). Lead-free reflow compatible. Halogen-free status not explicitly stated in verified data.

Data verified on: 2026-09-13 β€” data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Infineon Technologies IKW20N60TFKSA1 IKW20N60T IKW20N60H3FKSA1 IKW30N60H3FKSA1 STGW20NC60VD FGH20N60SMD IGBT Insulated-Gate Bipolar Transistor TRENCHSTOP TRENCHSTOP IGBT3 Emitter Controlled Diode TO-247-3 PG-TO247-3-1 power semiconductor discrete semiconductor collector-emitter voltage Vce(sat) RBSOA PFC UPS industrial motor drive welding inverter induction heating RoHS JEDEC TO-247
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