IKW20N60TFKSA1 - 600V 20A TrenchStop IGBT | Infineon TO-247
MPN: IKW20N60TFKSA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.85 | $3.85 |
| 10 | $3.45 | $34.50 |
| 100 | $2.92 | $292.00 |
| 500 | $2.48 | $1,240.00 |
| 1,000 | $2.15 | $2,150.00 |
Drop-in alternatives for IKW20N60TFKSA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IKW20N60H3FKSA1
β Drop-Inπ Reference alternative (not in catalog)
IKW20N60T
β Drop-Inπ Reference alternative (not in catalog)
IKW30N60H3FKSA1
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IKW40N120H3FKSA1
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IKW50N65H5FKSA1
β Drop-Inβ In Stock
$5.45 / Unit
View Datasheet βSTGW20NC60VD
β Drop-Inπ Reference alternative (not in catalog)
FGH20N60SMD
β Drop-Inπ Reference alternative (not in catalog)
IKW20N60TFKSA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IKW20N60TFKSA1 |
| Part Status | Active |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector (Ic) Max @ 25C | 40 A |
| Current - Collector (Ic) Continuous | 20 A |
| Power - Max | 166 W |
| Operating Temperature Junction (Tj) | -40C to +175C |
| Package / Case | TO-247-3 (PG-TO247-3-1) |
| Mounting Type | Through Hole |
| Diode Configuration | Anti-parallel (co-packaged, full-rated) |
| RoHS Status | Compliant |
| Technology Family | TRENCHSTOP IGBT3 |
IKW20N60TFKSA1 Pin Configuration
| Pin 1 | Gate (G) β Gate drive input, typically driven to +15 V on, 0 to -15 V off |
| Pin 2 | Collector (C) β Power collector terminal, connected to high-voltage DC bus positive rail |
| Pin 3 | Emitter (E) β Power emitter terminal, returns to DC bus negative (or PFC midpoint) |
Forward Bias Safe Operating Area (FBSOA)
Typical Applications
IKW20N60TFKSA1 is suitable for 6 applications: Uninterruptible Power Supplies (UPS), Solar String Inverters, Industrial Motor Drives (VFD), Welding Power Supplies, Power Factor Correction (PFC) Stages, Induction Heating Cooktops.
Uninterruptible Power Supplies (UPS)
The IKW20N60TFKSA1 fits UPS inverter stages that convert rectified 400 V DC bus into 230 V AC at 20 A continuous. Its 600 V Vce(s) rating provides 50% derating margin on a 400 V rectified bus, while the co-packaged Emitter Controlled Diode eliminates external freewheeling rectifiers and minimizes commutation-loop inductance. The TRENCHSTOP IGBT3 generation's low Vce(sat) (typical ~1.5 V at rated current) reduces conduction loss compared to planar NPT IGBTs of the same current class, improving inverter efficiency by 1-2% at full load. Designers use it in online double-conversion UPS units rated 5-10 kVA.
Recommended
Solar String Inverters
In transformerless string inverters the IKW20N60TFKSA1 serves as the H-bridge or HERIC switching element operating from a 400-600 V DC link. Its positive temperature coefficient of Vce(sat) makes parallel-device modules easy to balance thermally when multiple IKW20N60TFKSA1 are paralleled for higher-power 5-10 kW single-phase inverters. The co-packaged soft-recovery diode reduces EMI from diode reverse-recovery, allowing relaxed snubber design and lower switching losses. Industrial-grade operating junction range (-40C to +175C) handles outdoor inverter thermal environments with conservative heatsinking.
Recommended
Industrial Motor Drives (VFD)
Variable-frequency drives (VFDs) for 3-phase induction motors in the 5-10 HP range use the IKW20N60TFKSA1 in the inverter-stage IGBT bridge. With 20 A continuous current it matches 230 V 3-phase motors up to about 4 kW and 400 V 3-phase motors up to 7.5 kW. The TRENCHSTOP IGBT3's square reverse-bias safe operating area (RBSOA) supports the inductive-switching transients of motor winding commutation without failure. Its low Vce(sat) reduces total inverter conduction loss, contributing to drive efficiency above 97% in well-designed 3-level topologies up to ~15 kHz switching frequency.
Recommended
Welding Power Supplies
Inverter-based MIG/TIG welders require robust IGBTs capable of high peak currents and hard-switching at moderate frequencies. The IKW20N60TFKSA1's 40 A pulsed collector current rating supports the repetitive surge currents seen during arc-strike and short-circuit transfer in welding waveforms, while its co-packaged fast-recovery diode handles free-wheeling energy back to the DC link. The TO-247-3 package's low thermal resistance (junction-to-case around 0.75 C/W) allows compact heatsink designs in portable welders. Designers appreciate the positive Vce(sat) temperature coefficient which prevents thermal runaway when paralleling devices for higher welding current.
Recommended
Power Factor Correction (PFC) Stages
Bridgeless PFC front-ends for industrial SMPS and EV chargers up to about 5 kW use the IKW20N60TFKSA1 as the boost-switch element on a 400 V DC output bus. Its 600 V breakdown supports the peak rectified-line voltage with margin and the co-packaged diode simplifies continuous-conduction-mode (CCM) PFC topology. The IGBT3 generation's lower switching loss than older NPT IGBTs allows PFC switching frequencies up to 30 kHz with manageable efficiency, reducing magnetics size. Soft turn-off behavior reduces EMI filter complexity in PFC power supplies targeting EN 61000-3-2 compliance for harmonic current limits.
Recommended
Induction Heating Cooktops
Induction cooktop inverters operating at 20-50 kHz from a rectified mains bus use the IKW20N60TFKSA1 as the resonant half-bridge switching element driving the induction coil. Its co-packaged fast-recovery diode handles the resonant tank free-wheeling current, while the low Vce(sat) and positive temperature coefficient keep conduction losses low when the part heats during continuous cooking operation. The 600 V rating is comfortable for 230 V mains rectified (peak ~325 V) and the 166 W power dissipation rating gives thermal margin for the cooktop's compact heatsink design. TRENCHSTOP IGBT3's square RBSOA provides robustness against the resonant-load transients typical in induction cooking.
Recommended
Recommended Products Summary
Engineering reference data for IKW20N60TFKSA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IKW20N60H3FKSA1 | IKW20N60T | STGW20NC60VD | FGH20N60SMD |
|---|---|---|---|---|---|
| Package | TO-247-3 | TO-247-3 - same | TO-247-3 - same | TO-247-3 - same | TO-247-3 - same |
| Brand | Infineon | Infineon | Infineon | STMicroelectronics | onsemi |
| Collector-Emitter Voltage (Vces) | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous Collector Current (Ic) | 20 A | 20 A | 20 A | 20 A | 20 A |
| IGBT Generation | TRENCHSTOP IGBT3 | TRENCHSTOP 5 (H3) | TRENCHSTOP IGBT3 (same die) | PowerMESH IGBT | Field Stop IGBT |
| Co-packaged Diode | Yes (Emitter Controlled Diode) | Yes (softer recovery) | Yes | Yes | Yes |
| Power Dissipation Max | 166 W | [DATA_NEEDED] | 166 W | [DATA_NEEDED] | [DATA_NEEDED] |
| Unit Price (qty 100) | $2.92 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
Key Differentiators
- Co-packaged Emitter Controlled Diode (ECD) with very soft recovery (vs IKW20N60H3FKSA1 (newer generation))
- Proven TRENCHSTOP IGBT3 generation with extensive application data (vs STGW20NC60VD)
- Wide availability with active lifecycle status (vs FGH20N60SMD)
Design Notes
Estimated: with Vce(sat) of approximately 1.5 V at 20 A continuous, the conduction loss is roughly 30 W (Vce x Ic). Adding switching losses of approximately 0.5-1 mJ per cycle at 20 kHz yields 10-20 W additional loss. Total dissipation of 40-50 W at TC=25C requires a heatsink with thermal resistance below 1.0 C/W to keep junction-to-ambient rise below 50 C. Use thermal interface material rated for the 175 C maximum junction temperature and verify the heatsink's Rth(sa) on the actual mounting orientation (vertical vs horizontal).
Minimize commutation loop inductance between the DC-link bus, the IGBT collector/emitter terminals, and the co-packaged diode. Keep the DC-link film capacitor as close as physically possible to the TO-247 leads. Add a small RC snubber (typically 10-100 ohm in series with 0.1-1 nF) across collector-emitter to damp voltage overshoot from stray inductance during turn-off. Use a kelvin (emitter-sense) connection from pin 3 directly to the gate-driver return to eliminate source-inductance effects on gate-drive timing.
Always apply negative gate-emitter bias (typically -5 to -15 V) during the IGBT off state. Without negative bias, the Miller-effect dV/dt during turn-on of the complementary IGBT in a half-bridge can falsely turn on the IKW20N60TFKSA1 via its Cge capacitance, causing shoot-through and catastrophic failure. Also ensure the gate-drive supply can source/sink the specified gate-charge current (typically 1-2 A peak during switching transients). A standard 78xx linear regulator is NOT adequate; use a dedicated isolated gate-drive supply or bootstrap circuit.
Compliance Information
RoHS compliance per Infineon product page. Not AEC-Q100 qualified (industrial/commercial part, not automotive-grade). Lead-free reflow compatible. Halogen-free status not explicitly stated in verified data.