IKW20N60TFKSA1 vs IKW50N65H5FKSA1 Comparison
Detailed side-by-side comparison of IKW20N60TFKSA1 by Infineon and IKW50N65H5FKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IKW20N60TFKSA1 | IKW50N65H5FKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | IGBTs | Transistors |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.15 | $5.45 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IKW20N60TFKSA1 | β |
| Part Status | Active | β |
| IGBT Type | Trench Field Stop | β |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | β |
| Current - Collector (Ic) Max @ 25C | 40 A | β |
| Current - Collector (Ic) Continuous | 20 A | β |
| Power - Max | 166 W | β |
| Switching Energy (Eon+Eoff) | [DATA_NEEDED: switching energy value] | β |
| Vce(on) at Ic, Tj=25C | [DATA_NEEDED: Vce(sat) at rated condition] | β |
| Gate Charge (Qg) | [DATA_NEEDED: gate charge value] | β |
| Input Capacitance (Cies) | [DATA_NEEDED: input capacitance value] | β |
| Reverse Recovery Time (trr) of co-packaged diode | [DATA_NEEDED: trr value] | β |
| Td(on)/Td(off) | [DATA_NEEDED: turn-on/off delay times] | β |
| Operating Temperature Junction (Tj) | -40C to +175C | β |
| Package / Case | TO-247-3 (PG-TO247-3-1) | β |
| Mounting Type | Through Hole | Through Hole |
| Diode Configuration | Anti-parallel (co-packaged, full-rated) | β |
| RoHS Status | Compliant | Compliant (per Infineon) |
| Technology Family | TRENCHSTOP IGBT3 | β |
| Product Type | β | IGBT Single Transistor |
| Technology | β | TRENCHSTOP 5 (H5 high-speed family) |
| Collector-Emitter Voltage (VCE) | β | 650 V |
| Continuous Collector Current (IC, TC=25C) | β | 80 A |
| Continuous Collector Current (IC, TC=100C) | β | 50 A |
| Pulsed Collector Current (ICM) | β | [DATA_NEEDED: ICM value] |
| Maximum Power Dissipation (Ptot) | β | 305 W |
| Collector-Emitter Saturation Voltage (VCE(sat)) | β | 1.65 V at IC = 50 A |
| Gate-Emitter Voltage (VGE) max | β | 20 V (typical rating) |
| Gate Threshold Voltage (VGE(th)) | β | [DATA_NEEDED: VGE(th) value] |
| Built-in Diode | β | Yes, anti-parallel co-packaged diode |
| Operating Junction Temperature (Tj) | β | -40 C to +175 C (typical IGBT max) |
| Package | β | TO-247 (PG-TO247-3), 3 pins |
| Packing | β | Tube (240 pcs/tube per Infineon product page) |
| Lifecycle Status | β | Active (per Infineon product page) |