IKW20N60TFKSA1 - 600V 20A TrenchStop IGBT | Infineon TO-247
N.º de pieza: IKW20N60TFKSA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $3.85 | $3,85 |
| 10 | $3.45 | $34,50 |
| 100 | $2.92 | $292,00 |
| 500 | $2.48 | $1.240,00 |
| 1.000 | $2.15 | $2.150,00 |
IKW20N60TFKSA1 Descripción general
An IGBT (Insulated-Gate Bipolar Transistor) is a three-terminal power semiconductor that combines the high input impedance and fast switching of a MOSFET with the low conduction loss of a bipolar transistor. In the broader taxonomy it sits between power MOSFETs and thyristors: IGBT -> power semiconductor -> discrete semiconductor -> power management. TRENCHSTOP is Infineon's brand name for its field-stop / trench-cell IGBT technology generation, offering lower Vce(sat), reduced switching loss, and softer turn-off behavior than earlier planar NPT generations.
Key differentiating features of the IKW20N60TFKSA1 include low Vce(sat) for reduced conduction losses, low switching losses, positive temperature coefficient in Vce(sat) enabling easy paralleling, and a very soft fast-recovery anti-parallel Emitter Controlled Diode (ECD) that minimizes reverse-recovery losses and voltage overshoot. The TO-247-3 package provides a low thermal resistance path and is widely accepted in industrial power designs.
Architecture-wise this part uses a TRENCHSTOP field-stop IGBT3 cell with an emitter-controlled co-packaged diode on a single die-lead-frame, which significantly improves both static and dynamic performance compared to older NPT 600 V IGBTs of the same current class. The positive temperature coefficient of Vce(sat) simplifies thermal balancing when multiple devices are paralleled for higher current.
Typical applications include uninterruptible power supplies (UPS), solar inverters, welding equipment, induction heating, industrial motor drives, and power-factor correction (PFC) stages operating at switching frequencies from 8 kHz up to approximately 30 kHz in hard-switching topologies. Designers choose the IKW20N60TFKSA1 when they need a robust 600 V / 20 A co-packaged IGBT-diode building block with proven reliability.
Design consideration: ensure the gate drive voltage is at +15 V on turn-on and a negative bias (typically -5 to -15 V) on turn-off to prevent parasitic turn-on from Miller-induced dV/dt; provide a sufficiently sized DC-link snubber and minimize commutation loop inductance for reliable hard-switching operation above 10 kHz.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone, providing an engineering decision resource for power electronics designers selecting a 600 V co-packaged IGBT.
Alternativas directas para IKW20N60TFKSA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con IKW20N60TFKSA1 (mismo factor de forma y huella) — difiere en RoHS Status.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
IKW20N60H3FKSA1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IKW20N60T
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IKW30N60H3FKSA1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IKW40N120H3FKSA1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IKW50N65H5FKSA1
✅ Sustitución directa✓ En stock
$5.45 / unidad
Ver hoja de datos →STGW20NC60VD
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
FGH20N60SMD
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IKW20N60TFKSA1 Valores máximos y características eléctricas
| Manufacturer | Infineon Technologies |
| Part Number | IKW20N60TFKSA1 |
| Part Status | Active |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector (Ic) Max @ 25C | 40 A |
| Current - Collector (Ic) Continuous | 20 A |
| Power - Max | 166 W |
| Operating Temperature Junction (Tj) | -40C to +175C |
| Encapsulado / Carcasa | TO-247-3 (PG-TO247-3-1) |
| Tipo de montaje | Through Hole |
| Diode Configuration | Anti-parallel (co-packaged, full-rated) |
| Estado RoHS | Compliant |
| Technology Family | TRENCHSTOP IGBT3 |
Configuración de pines de IKW20N60TFKSA1
| Pin 1 | Gate (G) — Gate drive input, typically driven to +15 V on, 0 to -15 V off |
| Pin 2 | Collector (C) — Power collector terminal, connected to high-voltage DC bus positive rail |
| Pin 3 | Emitter (E) — Power emitter terminal, returns to DC bus negative (or PFC midpoint) |
Forward Bias Área de funcionamiento seguro (FBSOA)
Aplicaciones típicas
IKW20N60TFKSA1 es adecuado para 6 aplicacións: Uninterruptible Power Supplies (UPS), Solar String Inverters, Industrial Motor Drives (VFD), Welding Power Supplies, Power Factor Correction (PFC) Stages, Induction Heating Cooktops.
Uninterruptible Power Supplies (UPS)
The IKW20N60TFKSA1 fits UPS inverter stages that convert rectified 400 V DC bus into 230 V AC at 20 A continuous. Its 600 V Vce(s) rating provides 50% derating margin on a 400 V rectified bus, while the co-packaged Emitter Controlled Diode eliminates external freewheeling rectifiers and minimizes commutation-loop inductance. The TRENCHSTOP IGBT3 generation's low Vce(sat) (typical ~1.5 V at rated current) reduces conduction loss compared to planar NPT IGBTs of the same current class, improving inverter efficiency by 1-2% at full load. Designers use it in online double-conversion UPS units rated 5-10 kVA.
Recomendado
Solar String Inverters
In transformerless string inverters the IKW20N60TFKSA1 serves as the H-bridge or HERIC switching element operating from a 400-600 V DC link. Its positive temperature coefficient of Vce(sat) makes parallel-device modules easy to balance thermally when multiple IKW20N60TFKSA1 are paralleled for higher-power 5-10 kW single-phase inverters. The co-packaged soft-recovery diode reduces EMI from diode reverse-recovery, allowing relaxed snubber design and lower switching losses. Industrial-grade operating junction range (-40C to +175C) handles outdoor inverter thermal environments with conservative heatsinking.
Recomendado
Industrial Motor Drives (VFD)
Variable-frequency drives (VFDs) for 3-phase induction motors in the 5-10 HP range use the IKW20N60TFKSA1 in the inverter-stage IGBT bridge. With 20 A continuous current it matches 230 V 3-phase motors up to about 4 kW and 400 V 3-phase motors up to 7.5 kW. The TRENCHSTOP IGBT3's square reverse-bias safe operating area (RBSOA) supports the inductive-switching transients of motor winding commutation without failure. Its low Vce(sat) reduces total inverter conduction loss, contributing to drive efficiency above 97% in well-designed 3-level topologies up to ~15 kHz switching frequency.
Recomendado
Welding Power Supplies
Inverter-based MIG/TIG welders require robust IGBTs capable of high peak currents and hard-switching at moderate frequencies. The IKW20N60TFKSA1's 40 A pulsed collector current rating supports the repetitive surge currents seen during arc-strike and short-circuit transfer in welding waveforms, while its co-packaged fast-recovery diode handles free-wheeling energy back to the DC link. The TO-247-3 package's low thermal resistance (junction-to-case around 0.75 C/W) allows compact heatsink designs in portable welders. Designers appreciate the positive Vce(sat) temperature coefficient which prevents thermal runaway when paralleling devices for higher welding current.
Recomendado
Power Factor Correction (PFC) Stages
Bridgeless PFC front-ends for industrial SMPS and EV chargers up to about 5 kW use the IKW20N60TFKSA1 as the boost-switch element on a 400 V DC output bus. Its 600 V breakdown supports the peak rectified-line voltage with margin and the co-packaged diode simplifies continuous-conduction-mode (CCM) PFC topology. The IGBT3 generation's lower switching loss than older NPT IGBTs allows PFC switching frequencies up to 30 kHz with manageable efficiency, reducing magnetics size. Soft turn-off behavior reduces EMI filter complexity in PFC power supplies targeting EN 61000-3-2 compliance for harmonic current limits.
Recomendado
Induction Heating Cooktops
Induction cooktop inverters operating at 20-50 kHz from a rectified mains bus use the IKW20N60TFKSA1 as the resonant half-bridge switching element driving the induction coil. Its co-packaged fast-recovery diode handles the resonant tank free-wheeling current, while the low Vce(sat) and positive temperature coefficient keep conduction losses low when the part heats during continuous cooking operation. The 600 V rating is comfortable for 230 V mains rectified (peak ~325 V) and the 166 W power dissipation rating gives thermal margin for the cooktop's compact heatsink design. TRENCHSTOP IGBT3's square RBSOA provides robustness against the resonant-load transients typical in induction cooking.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IKW20N60TFKSA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IKW20N60H3FKSA1 | IKW20N60T | STGW20NC60VD | FGH20N60SMD |
|---|---|---|---|---|---|
| Package | TO-247-3 | TO-247-3 - same | TO-247-3 - same | TO-247-3 - same | TO-247-3 - same |
| Brand | Infineon | Infineon | Infineon | STMicroelectronics | onsemi |
| Collector-Emitter Voltage (Vces) | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous Collector Current (Ic) | 20 A | 20 A | 20 A | 20 A | 20 A |
| IGBT Generation | TRENCHSTOP IGBT3 | TRENCHSTOP 5 (H3) | TRENCHSTOP IGBT3 (same die) | PowerMESH IGBT | Field Stop IGBT |
| Co-packaged Diode | Yes (Emitter Controlled Diode) | Yes (softer recovery) | Yes | Yes | Yes |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
Diferenciadores clave
- Co-packaged Emitter Controlled Diode (ECD) with very soft recovery (frente a IKW20N60H3FKSA1 (newer generation))
- Proven TRENCHSTOP IGBT3 generation with extensive application data (frente a STGW20NC60VD)
- Wide availability with active lifecycle status (frente a FGH20N60SMD)
Notas de diseño
Estimated: with Vce(sat) of approximately 1.5 V at 20 A continuous, the conduction loss is roughly 30 W (Vce x Ic). Adding switching losses of approximately 0.5-1 mJ per cycle at 20 kHz yields 10-20 W additional loss. Total dissipation of 40-50 W at TC=25C requires a heatsink with thermal resistance below 1.0 C/W to keep junction-to-ambient rise below 50 C. Use thermal interface material rated for the 175 C maximum junction temperature and verify the heatsink's Rth(sa) on the actual mounting orientation (vertical vs horizontal).
Minimize commutation loop inductance between the DC-link bus, the IGBT collector/emitter terminals, and the co-packaged diode. Keep the DC-link film capacitor as close as physically possible to the TO-247 leads. Add a small RC snubber (typically 10-100 ohm in series with 0.1-1 nF) across collector-emitter to damp voltage overshoot from stray inductance during turn-off. Use a kelvin (emitter-sense) connection from pin 3 directly to the gate-driver return to eliminate source-inductance effects on gate-drive timing.
Always apply negative gate-emitter bias (typically -5 to -15 V) during the IGBT off state. Without negative bias, the Miller-effect dV/dt during turn-on of the complementary IGBT in a half-bridge can falsely turn on the IKW20N60TFKSA1 via its Cge capacitance, causing shoot-through and catastrophic failure. Also ensure the gate-drive supply can source/sink the specified gate-charge current (typically 1-2 A peak during switching transients). A standard 78xx linear regulator is NOT adequate; use a dedicated isolated gate-drive supply or bootstrap circuit.
Información de cumplimiento
RoHS compliance per Infineon product page. Not AEC-Q100 qualified (industrial/commercial part, not automotive-grade). Lead-free reflow compatible. Halogen-free status not explicitly stated in verified data.
