MD7IC18120NR1 - 120W RF LDMOS Power Amplifier 1.8GHz | NXP
MPN: MD7IC18120NR1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $95 | $95.00 |
| 10 | $89.5 | $895.00 |
| 50 | $84 | $4,200.00 |
| 100 | $78.5 | $7,850.00 |
| 500 | $72 | $36,000.00 |
MD7IC18120NR1 Overview
An RF LDMOS wideband integrated power amplifier is a multi-stage transistor amplifier built using Laterally Diffused Metal-Oxide Semiconductor process technology on-chip input and output matching networks. LDMOS devices sit at the top of the RF power transistor hierarchy (LDMOS -> RF power transistor -> discrete RF semiconductor -> power amplifier IC) and dominate cellular base-station transmitter output stages because they combine high peak power, high efficiency, and excellent thermal performance under continuous-wave and digitally modulated signals. The integrated multi-stage topology eliminates the discrete RF designer's inter-stage matching burden.
Key differentiating features of the MD7IC18120NR1 include integrated on-chip matching that covers 1805 to 1880 MHz without external tuning, broadband response that supports all typical cellular base-station modulation formats (GSM, EDGE, W-CDMA, LTE), high gain of 25.8 dB per stage, and an integrated ESD protection structure that improves assembly-level robustness. The TO-270 WBL-16 package is optimized for high thermal conductivity, allowing reliable operation at the 120 W peak envelope power level with appropriate external heatsinking.
The MD7IC18120NR1 uses NXP's 7th-generation HV7 LDMOS process, which delivers higher breakdown voltage, better thermal conductivity, and higher peak efficiency than prior NXP generations. The on-chip matching networks use lumped LC structures tuned to the 1.8 GHz band; the device is intended for single-ended external circuitry and a 50-ohm RF chain. Designers should observe the device's stable-operation source and load impedance requirements.
Typical applications include W-CDMA, LTE, and 5G NR base-station transmitter final-stage amplifiers, GSM/EDGE linear power amplifiers, RFID and industrial-scientific-medical (ISM) band power amplifiers operating near 1.8 GHz, and aerospace/defense communication links. The wide operating bandwidth also supports software-defined radio transmitter blocks.
When designing with this device, ensure the heatsink provides a thermal resistance below 1.0 C/W so the junction temperature stays within the maximum rating at 30 W average W-CDMA output, and follow NXP's reference-design evaluation board layout for the TO-270 WBL-16 footprint to preserve the 50-ohm input and output impedance environment.
This page synthesizes distributor pricing, parametric alternatives, application-circuit recommendations, and design notes beyond what is included in the NXP datasheet, providing practical engineering context for cellular infrastructure designers evaluating the MD7IC18120NR1.
Drop-in alternatives for MD7IC18120NR1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
MD7IC18120N
✅ Drop-In📋 Reference alternative (not in catalog)
MD7IC18120GNR1
✅ Drop-In📋 Reference alternative (not in catalog)
MD7IC18120GN
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
MD7IC18120NR1 Maximum Ratings & Electrical Characteristics
| Manufacturer | NXP USA Inc. (formerly Freescale Semiconductor) |
| Part Number | MD7IC18120NR1 |
| Product Type | RF LDMOS Wideband Integrated Power Amplifier |
| RF Type | W-CDMA / cellular base-station modulation formats |
| Frequency Range | 1.805 GHz to 1.88 GHz |
| Supply Voltage | 28 V (rated 26 V to 32 V operation) |
| Power Gain | 25.8 dB |
| Peak Output Power | 120 W (P3dB / pulsed) |
| Average Output Power | 30 W (W-CDMA modulated) |
| Package / Case | TO-270 WBL-16, 16-lead, over-molded plastic with flat leads |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel |
| Number of Functions | 2 (dual-stage integrated) |
| Terminal Finish | Matte Tin (Sn) |
| JESD-609 Code | e3 |
| Process Technology | NXP HV7 LDMOS (7th generation high-voltage LDMOS) |
MD7IC18120NR1 Pin Configuration
| Pin 1 | RF_IN — RF input (50 ohm, on-chip matched) |
| Pin 2 | VGG1 — Gate bias for stage 1 |
| Pin 3 | NC — Not connected (per datasheet) |
| Pin 4 | GND — Ground / flange |
| Pin 5 | VDD1 — Drain supply for stage 1 (28 V) |
| Pin 6 | GND — Ground / flange |
| Pin 7 | NC — Not connected (per datasheet) |
| Pin 8 | VGG2 — Gate bias for stage 2 |
| Pin 9 | NC — Not connected (per datasheet) |
| Pin 10 | GND — Ground / flange |
| Pin 11 | VDD2 — Drain supply for stage 2 (28 V) |
| Pin 12 | GND — Ground / flange |
| Pin 13 | NC — Not connected (per datasheet) |
| Pin 14 | NC — Not connected (per datasheet) |
| Pin 15 | GND — Ground / flange |
| Pin 16 | RF_OUT — RF output (50 ohm, on-chip matched) |
Safe Operating Area
Typical Applications
MD7IC18120NR1 is suitable for 6 applications: W-CDMA / LTE Base-Station Transmitter Final Stage, GSM/EDGE Linear Power Amplifier, 5G NR Band 3 / LTE Band 3 Macro-Cell Final Stage, RFID / Industrial-Scientific-Medical (ISM) Power Amplifier near 1.8 GHz, Aerospace / Defense Communication Links, Software-Defined Radio (SDR) Transmitter Block.
W-CDMA / LTE Base-Station Transmitter Final Stage
The MD7IC18120NR1's 120 W peak power and 25.8 dB gain make it a natural fit for cellular base-station transmitter final-stage amplifiers covering the 1.805-1.88 GHz DCS-1800/UMTS Band 3/LTE Band 3 downlink. The on-chip matching networks eliminate the inter-stage design burden while preserving high efficiency under W-CDMA modulation; the integrated ESD structure also improves assembly-level yield. Placed at the final stage after the driver amplifier, this part delivers 30 W average W-CDMA output at a 28 V supply, which is the typical output target for macro-cell base-station power amplifiers. The 50-ohm single-ended RF chain simplifies PCB layout and reference design reuse.
Recommended
GSM/EDGE Linear Power Amplifier
The MD7IC18120NR1 covers the 1.8 GHz DCS-1800 GSM/EDGE band with the linearity needed for GMSK and 8-PSK modulation. While modern cellular systems use LTE and 5G NR, legacy GSM/EDGE infrastructure remains in service globally, particularly in roaming and rural coverage scenarios. The integrated multi-stage topology provides the gain and power needed for macro-cell coverage, and the 28 V supply matches standard cellular base-station power rails. Designed replacing a discrete transistor stack, this part reduces BOM count and PCB footprint by integrating the matching networks and bias circuits.
Recommended
5G NR Band 3 / LTE Band 3 Macro-Cell Final Stage
The 1.805-1.88 GHz coverage of the MD7IC18120NR1 aligns with 5G NR Band n3 and LTE Band 3, both critical bands for global 4G/5G macro-cell coverage. The integrated matching network provides the wideband response needed to handle the multi-carrier LTE and 5G NR signal aggregation typical of modern macro-cell deployments. The 30 W average power capability matches the typical macro-cell PA target, and the 25.8 dB gain reduces the number of driver stages required. Designed for the 4T4R or 2T2R MIMO transmitter architecture typical of LTE/5G base stations.
Recommended
RFID / Industrial-Scientific-Medical (ISM) Power Amplifier near 1.8 GHz
Industrial RFID readers, scientific instrumentation, and certain medical-imaging systems operate near 1.8 GHz and benefit from the MD7IC18120NR1's high CW power handling of up to 120 W pulsed. The integrated on-chip matching eliminates discrete network tuning effort, accelerating time-to-market for ISM-band system designers. Used as a final-stage PA with appropriate harmonic filtering to meet regulatory emission masks, this part provides a compact, reliable RF power solution. Designed with heatsinking that maintains the junction below 150 C for long-term reliability.
Recommended
Aerospace / Defense Communication Links
The MD7IC18120NR1's rugged LDMOS process and wideband response make it suitable for aerospace and defense communication systems operating in the 1.8 GHz range, including tactical radio links and electronic-countermeasure (ECM) jammers. The 120 W peak power capability supports long-distance RF transmission, while the integrated matching network reduces the SWaP-C footprint in airborne and naval platforms. Designed with conformal coating and ruggedized heatsinking for MIL-STD-810 environmental compliance.
Recommended
Software-Defined Radio (SDR) Transmitter Block
Software-defined radio transmitters targeting 1.8 GHz cellular bands can leverage the MD7IC18120NR1's wideband integrated PA design. The on-chip matching accommodates the multi-carrier, multi-standard signal environments typical of SDR architectures, including simultaneous LTE/5G NR carrier aggregation. The 25.8 dB gain simplifies the SDR's transmitter chain by reducing the number of discrete driver stages. Designed with appropriate DPD (digital pre-distortion) feedback to maintain linearity under multi-carrier operation.
Recommended
Recommended Products Summary
Engineering reference data for MD7IC18120NR1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MD7IC18120N | MD7IC18120GNR1 | MD7IC18120GN |
|---|---|---|---|---|
| Package | TO-270 WBL-16 | TO-270 WBL-16 - same | TO-270 WBL-16 - same | TO-270 WBL-16 - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Range | 1.805 GHz to 1.88 GHz | 1.805 GHz to 1.88 GHz | 1.805 GHz to 1.88 GHz | 1.805 GHz to 1.88 GHz |
| Peak Output Power | 120 W | 120 W | 120 W | 120 W |
| Average Output Power (W-CDMA) | 30 W | 30 W | 30 W | 30 W |
| Power Gain | 25.8 dB | 25.8 dB | 25.8 dB | 25.8 dB |
| Supply Voltage | 28 V (26 V to 32 V) | 28 V (26 V to 32 V) | 28 V (26 V to 32 V) | 28 V (26 V to 32 V) |
| Packaging Format | Tape & Reel (R1) | Tube | Tape & Reel, gull-wing | Tube, gull-wing |
| Lead Form | Flat leads | Flat leads | Gull-wing | Gull-wing |
Key Differentiators
- Higher gain than typical 1.8 GHz base-station PA ICs (vs MD7IC18120N)
- Lead-form options for design flexibility (vs MD7IC18120GNR1)
- On-chip matching eliminates discrete inter-stage networks (vs MD7IC18120GN)
Design Notes
Estimated: At 30 W average W-CDMA output and 28 V supply, typical PAE is 30-35%, so DC power input is approximately 90 W and dissipated heat is 60 W. The TO-270 WBL-16 package requires a heatsink with thermal resistance below 1.0 C/W to maintain the junction below the 200 C maximum rating. NXP's evaluation board uses a forced-air heatsink; for production designs, follow the reference thermal-mounting torque (typically 0.5-0.7 N-m) and use thermal interface material with conductivity above 1.0 W/m-K. Verify junction temperature under your actual modulation profile.
The TO-270 WBL-16 footprint must follow the NXP reference design land pattern exactly, with the package flange soldered to a continuous ground plane and thermal via array under the package body. RF input and output traces should use 50-ohm controlled-impedance microstrip or stripline construction with the dielectric constant specified in the evaluation board BOM. Keep gate bias traces physically separated from RF traces to avoid coupling, and place bypass capacitors as close to the VDD pins as physically possible to suppress supply ringing.
Do not exceed 32 V on VDD1 or VDD2 - the LDMOS device will suffer irreversible breakdown above this rating. Apply gate bias before (or simultaneously with, via sequencing) drain voltage to prevent the device from operating in an undefined bias state. Ensure the RF input is terminated when the device is powered to prevent oscillation; use a 50-ohm termination at the input during bias tuning. Follow the recommended bias sequencing documented in the datasheet to avoid parametric drift and reduced reliability.
The ground flange of the TO-270 WBL-16 must have a low-inductance connection to the system ground; use multiple ground vias in the PCB land pattern under the package. Place the gate bias network physically far from the RF output trace to avoid feedback coupling. For multi-carrier LTE/5G NR applications, the harmonic filter network should be placed as close to the RF output as practical to meet regulatory emission masks. The reference design evaluation board (available from NXP) provides the validated layout baseline.
Compliance Information
Terminal finish per partstack listing is Matte Tin (Sn) with JESD-609 Code e3, indicating lead-free (Pb-free) compliance. AEC-Q100 is not applicable - this is an RF power amplifier IC for base-station use, not automotive. RoHS and REACH compliance status [DATA_NEEDED] - the NXP datasheet should be consulted for the latest compliance certification; some legacy Freescale-branded variants may have different compliance status than current NXP-branded parts.
