MHPA19010N - PCS Band 10W 24.5dB LDMOS RF Amplifier | NXP
MPN: MHPA19010N ✗ End of Life| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $51.82 | $51.82 |
| 10 | $46.64 | $466.40 |
| 100 | $41.46 | $4,146.00 |
| 500 | $36.27 | $18,135.00 |
| 1,000 | $31.09 | $31,090.00 |
MHPA19010N Overview
An LDMOS (Laterally Diffused Metal Oxide Semiconductor) RF power amplifier is a specialized power transistor technology optimized for high-frequency, high-power RF signal amplification. LDMOS devices sit within the broader hierarchy of RF power transistors, which also includes GaN HEMT, Si BJT, and SiGe HBT technologies. LDMOS dominates cellular base-station transmit (PA) chains below ~3 GHz because it combines high RF output power, good linearity, cost-effective silicon processing, and excellent ruggedness into a single robust device. Within a base-station RF front-end, the LDMOS PA sits after the digital predistortion (DPD) feedback path and before the duplexer and antenna.
Key features include 24.5 dB typical gain, high linearity for CDMA/IS-95 and TDMA digital modulation formats, excellent group-delay and phase-linearity characteristics, and internal input/output matching for 50 ohm systems. The silicon FET design provides ruggedness against load mismatches, and the device operates from a single 28 V DC supply typical of cellular infrastructure rails.
The MHPA19010N uses NXP's high-voltage silicon LDMOS process. The technology provides high breakdown voltage, low thermal resistance through the ceramic-metal flange, and stable gain across the PCS band. The integrated matching networks eliminate the need for external baluns, simplifying PCB layout while maintaining the high Q required for 10 W linear output.
Typical applications include PCS 1.9 GHz base-station power amplifiers, CDMA/TDMA microcell and picocell transmitters, RF repeater output stages, and in-building distributed antenna system (DAS) head-end drivers. The part is particularly suited to systems using pilot, sync, paging, and traffic channel coding such as IS-95.
When designing with this device, ensure adequate thermal management - the metal flange must be bolted to a heatsink with thermal compound, and the 28 V supply should include proper RF chokes and bypass capacitance to prevent feedback oscillation. According to NXP documentation, the recommended replacement is the MHV5IC2215NR2 for new designs.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone.
Drop-in alternatives for MHPA19010N — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
MHPA19010
✅ Drop-In📋 Reference alternative (not in catalog)
MHPA19010N
✅ Drop-In✓ In Stock
$31.09 / Unit
View Datasheet →MHPA19010N Maximum Ratings & Electrical Characteristics
| Technology | LDMOS (silicon FET) |
| Frequency Band | 1930 MHz to 1990 MHz (PCS) |
| Operating Frequency | 1.96 GHz typical |
| Output Power (Pout) | 10 W typical |
| Power Gain | 24.5 dB typical |
| Supply Voltage (VDD) | 28 V typical |
| Input Impedance | 50 ohm |
| Output Impedance | 50 ohm |
| Class of Operation | Class AB |
| Modulation Support | CDMA, TDMA, IS-95 |
| Package / Case | Case 301AP-02 (ceramic, metal flange) |
| Package Body Material | METAL |
| Mounting Type | Chassis / heatsink mount (flanged) |
| Maximum Operating Temperature | 100 C |
| RoHS Status | Compliant (lead-free N suffix) |
| Replacement Part | MHV5IC2215NR2 |
MHPA19010N metal Pin Configuration Guide
Pin configuration for MHPA19010N (metal package). This analog component features input, output, and power supply pins. Refer to the manufacturer datasheet for offset null, compensation, and enable pin configurations. Ideal for signal conditioning and amplifier circuits.
No detailed pinout data available for MHPA19010N.
Refer to the datasheet for full pin configuration.
Typical Applications
MHPA19010N is suitable for 6 applications: PCS Base Station Power Amplifier, CDMA/TDMA Microcell Transmitter, RF Repeater Output Stage, In-Building DAS Head-End Driver, Private PCS Network Infrastructure, Test and Measurement RF Power Stage.
PCS Base Station Power Amplifier
The MHPA19010N's 1930-1990 MHz coverage, 24.5 dB gain, and 10 W Pout align precisely with 1.96 GHz North American PCS base-station PA requirements. It is biased Class AB from a 28 V rail and directly drives the antenna through a duplexer. IS-95 CDMA linearity is outstanding per the datasheet, with sufficient headroom for pilot, sync, paging, and traffic codes. Compared with GaN, LDMOS still wins on cost per watt at sub-3 GHz PCS bands.
Recommended
CDMA/TDMA Microcell Transmitter
Microcells at 1.96 GHz need a compact, rugged 10 W PA chain. The MHPA19010N's internal 50 ohm matching eliminates external baluns, simplifying the small-form-factor microcell RF layout. Class AB biasing provides the linearity required for CDMA traffic channels at a fraction of the cost of a DPD-equipped GaN solution. Its metal-flanged package bolts directly to the microcell chassis wall for passive cooling.
Recommended
RF Repeater Output Stage
In-building and tunnel RF repeaters regenerate PCS signals at low to moderate power; the MHPA19010N's 10 W Pout and 24.5 dB gain are well matched to the final stage of a multi-band repeater. Excellent group delay and phase linearity preserve modulation fidelity across the 60 MHz PCS band, critical for transparent on-frequency amplification. The 28 V supply matches standard telecom DC rails, simplifying power architecture.
Recommended
In-Building DAS Head-End Driver
Distributed Antenna System head-end drivers need clean, linear 1.96 GHz amplification before optical or coax distribution. The MHPA19010N's 10 W output easily drives multiple remote antenna units through passive splitters, while its high linearity keeps ACPR within 3GPP2 CDMA2000 1x specifications. The rugged silicon LDMOS design tolerates load VSWR swings typical of unterminated DAS branches during commissioning.
Recommended
Private PCS Network Infrastructure
Utility, mining, and large-campus private PCS networks use 1.96 GHz for push-to-talk and telemetry. The MHPA19010N provides the high-power linear amplification required for downlink coverage across a mine site or refinery, with internal matching simplifying field-replaceable PA module design. The legacy part is favored for maintenance of already-deployed private PCS infrastructure, where pin-and-PCB compatibility is mandatory.
Recommended
Test and Measurement RF Power Stage
EMC and wireless test labs need a calibrated 1.96 GHz 10 W source for CDMA/TDMA conformance testing. The MHPA19010N's datasheet-typical 24.5 dB gain, 50 ohm match, and well-characterized linearity make it an excellent DUT or driver PA for production test fixtures. The chassis-mountable flange simplifies thermal management in long-duration burn-in and life-test stations where 100 C Tj limits must be respected.
Recommended
Recommended Products Summary
Engineering reference data for MHPA19010N — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MHPA19010 |
|---|---|---|
| Package | Case 301AP-02 (metal flange) | Case 301AP-02 - same |
| Brand | NXP Semiconductors (formerly Freescale) | NXP Semiconductors - same |
| Frequency Band | 1930-1990 MHz | 1930-1990 MHz |
| Output Power | 10 W | 10 W |
| Power Gain | 24.5 dB | 24.5 dB |
| Supply Voltage | 28 V | 28 V |
| Class of Operation | Class AB | Class AB |
| RoHS Status | Compliant (lead-free N suffix) | Non-RoHS (SnPb terminations) |
| Lifecycle Status | Obsolete (removed from active portfolio) | Obsolete (predecessor) |
| Maximum Operating Temperature | 100 C | 100 C |
Key Differentiators
- Only verified drop-in alternative in the same Case 301AP-02 package (vs MHPA19010 (original SnPb variant))
- Higher power than many plastic SMT alternatives (vs MHV5IC2215NR2 (NXP-recommended successor))
- Datasheet-characterized for IS-95 CDMA linearity (vs Generic 1.9 GHz LDMOS PAs)
Design Notes
Estimated: at 10 W RF output and a typical PAE of 35%, the MHPA19010N dissipates approximately 18.5 W as heat at 28 V. The metal-flanged Case 301AP-02 must be bolted to a chassis or heatsink with thermal compound; an inadequate thermal path will push the junction past the 100 C maximum. Use a thin (1-2 mil) thermal pad and torque the mounting screws evenly to avoid cracking the ceramic body.
The MHPA19010N has internal 50 ohm matching, but PCB traces to the RF leads must remain 50 ohm controlled-impedance and as short as possible. Place RF chokes on the 28 V drain feed directly at the package lead and use high-Q chip capacitors (100 pF and 10 nF in parallel) for bypassing. Keep the gate bias network isolated from the drain feed-through to prevent low-frequency oscillation.
Do not operate the MHPA19010N into an open or short-circuited load - although LDMOS is rugged, sustained high VSWR at 10 W Pout will degrade reliability. Add a circulator or isolator at the output for protection. Also, sequence the gate bias (VG) before the drain voltage (VD) during turn-on, and reverse the sequence at turn-off, to avoid device stress and thermal runaway.
Use a PCB substrate with low dielectric loss (Rogers RO4003C or equivalent) for the input and output RF traces leading to the MHPA19010N leads. Standard FR-4 is acceptable for control and bias lines but increases RF insertion loss at 1.96 GHz. Maintain continuous ground on the top layer beneath the RF traces and stitch with copious vias to the bottom ground plane.
Compliance Information
RoHS compliant per NXP datasheet (N suffix denotes lead-free terminations). REACH, halogen-free, and conflict-minerals declarations were not present in the public datasheet excerpt. AEC-Q100 is not applicable - this is an RF power amplifier, not an automotive-grade IC.
