MW4IC2230MBR5 - 30W RF LDMOS Power Amp 1.6-2.4GHz | NXP
MPN: MW4IC2230MBR5 ✗ End of Life| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $48.5 | $48.50 |
| 10 | $43.2 | $432.00 |
| 100 | $38.95 | $3,895.00 |
| 500 | $34.1 | $17,050.00 |
| 1,000 | $29.85 | $29,850.00 |
MW4IC2230MBR5 Overview
An RF power amplifier is the final active stage in a transmitter chain that boosts a low-level modulated IF/baseband signal up to the watt-level RF output required to drive the antenna. Wideband integrated designs such as MW4IC2230MBR5 collapse multiple gain stages, matching networks and bias circuitry into one die, reducing board area, BOM count and tune time versus a discrete implementation. As an LDMOS device it belongs to the laterally-diffused MOSFET family - a power transistor technology standard in base-station transmitters because of its high power density, high gain, and good efficiency at RF frequencies. The MW4IC2230MBR5 sits inside the broader hierarchy: RF power transistor -> LDMOS RF power amplifier -> base-station PA -> RF & wireless subsystem.
Key features include 31 dB typical power gain across the 1.6-2.4 GHz band, 26 V nominal drain supply, 60 mA quiescent supply current, integrated ESD protection, and a wideband input matching network that allows one part to cover multiple cellular bands. The TO-272 WB-16 over-molded plastic package provides low thermal resistance and is compatible with standard base-station heatsink assemblies.
The amplifier uses two integrated LDMOS gain stages with on-chip matching, internal bias sequencing and a robust thermally-stable plastic over-mold. The internal design trades absolute peak efficiency for broad bandwidth and ease of use, simplifying multi-band radio design.
Typical applications include W-CDMA/EDGE driver stages, GSM 1800/1900 MHz base-station PAs, 2.4 GHz ISM-band power amplifiers, RFID readers and other wireless infrastructure equipment operating in the 1.6-2.4 GHz window.
Designers should provide an adequate PCB copper thermal pad and a properly rated heatsink - the 30 W CW power level demands careful thermal management. Bias sequencing and supply decoupling per the NXP reference design are required to meet the linearity and gain specifications.
This page consolidates distributor stock, drop-in alternatives and practical design guidance not bundled in the NXP datasheet, helping RF engineers select and source the MW4IC2230MBR5 with confidence.
Drop-in alternatives for MW4IC2230MBR5 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with MW4IC2230MBR5 (same form factor and footprint) — differing in Mounting Type, Application, Frequency Range, Lead Configuration, Operating Mode.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
MW4IC2230MBR1
✅ Drop-In📋 Reference alternative (not in catalog)
MW4IC2230NBR1
✅ Drop-In✓ In Stock
$32 / Unit
View Datasheet →MW4IC2230GMBR1
✅ Drop-In📋 Reference alternative (not in catalog)
AFT27S010NT1
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
MRF7S21150HSR3
✅ Drop-In ⚠️ Specs Unverified✓ In Stock
$62.8 / Unit
View Datasheet →MW4IC2230MBR5 Maximum Ratings & Electrical Characteristics
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Type | RF LDMOS Wideband Integrated Power Amplifier |
| Frequency Range | 1.6 GHz to 2.4 GHz |
| Output Power (Pout) | 30 W (CW) |
| Power Gain | 31 dB (typical) |
| Supply Voltage (Vdd) | 26 V nominal |
| Quiescent Current (Idq) | 60 mA |
| Technology | LDMOS (Laterally Diffused MOSFET) |
| Package / Case | TO-272 WB-16 Variant, Flat Leads (over-molded plastic) |
| Mounting Type | Surface Mount (with heatsink) |
| Operating Mode | Class AB (typical) |
| Supported Air Interfaces | Cellular, CDMA, EDGE, GSM, TDMA, W-CDMA |
| Input Matching | Internal wideband matching network |
MW4IC2230MBR5 Pin Configuration
| Pin 1 | RFIN — RF input (matched, stage 1) |
| Pin 2 | Vgg1 — Gate bias, stage 1 |
| Pin 3 | GND — Ground (package thermal pad recommended) |
| Pin 4 | RFIN2 — RF input interstage |
| Pin 5 | Vgg2 — Gate bias, stage 2 |
| Pin 6 | GND — Ground |
| Pin 7 | NC — Not connected (per datasheet) |
| Pin 8 | NC — Not connected (per datasheet) |
| Pin 9 | Vdd2 — Drain supply, stage 2 (26 V) |
| Pin 10 | RFOUT — RF output (matched, stage 2) |
| Pin 11 | Vdd2 — Drain supply, stage 2 (26 V) |
| Pin 12 | GND — Ground |
| Pin 13 | RFOUT — RF output (matched) |
| Pin 14 | Vdd1 — Drain supply, stage 1 (26 V) |
| Pin 15 | Vdd1 — Drain supply, stage 1 (26 V) |
| Pin 16 | NC — Not connected (per datasheet) |
Typical Applications
MW4IC2230MBR5 is suitable for 6 applications: W-CDMA Base-Station Power Amplifier, GSM 1800/1900 MHz Transmitter, 2.4 GHz ISM-Band Power Amplifier, RFID Reader Transmitter, Industrial RF Heating/Plasma Driver, Wireless Infrastructure Repeater/Amplifier.
W-CDMA Base-Station Power Amplifier
The MW4IC2230MBR5's 1.92-1.98 GHz W-CDMA Band I coverage and 31 dB gain make it well suited for cellular base-station PA stages. The integrated matching eliminates the discrete component line-up normally needed to drive a 30 W final stage, while LDMOS technology delivers the linearity required to meet UMTS ACLR masks. Compared with a discrete PA line-up, this part reduces PCB area and tune time but requires a 26 V regulated rail and a copper-floored heatsink sized for continuous 30 W dissipation. Power output must be backed off to 5-10 W average to meet W-CDMA EVM/ACPR linearity budgets.
Recommended
GSM 1800/1900 MHz Transmitter
The MW4IC2230MBR5's 1.71-1.99 GHz coverage aligns with DCS-1800 and PCS-1900 GSM/EDGE bands, where its 30 W CW rating supports high-power macro-cell base stations. EDGE modulation with 8-PSK requires better linearity than GSM/GMSK, so the device is normally run in Class AB at moderate back-off. The integrated matching and TO-272 WB-16 plastic package simplify heatsink assembly versus ceramic-packaged alternatives. Designers must verify per-band noise power ratio (NPR) against the NXP characterization curves before release.
Recommended
2.4 GHz ISM-Band Power Amplifier
The MW4IC2230MBR5 reaches into the 2.4 GHz ISM band used by Wi-Fi and Bluetooth, although its 30 W CW rating is far above the regulatory limit for unlicensed operation. It is more practical as a driver stage for higher-power industrial or scientific applications in the upper band edge. The 31 dB gain and integrated matching make it useful as a generic 2 GHz-class lab amplifier. Users must comply with FCC/ETSI ISM-band emission masks when operating at full power.
Recommended
RFID Reader Transmitter
The MW4IC2230MBR5 supports UHF RFID reader applications operating in the 1.6-2.4 GHz range (covering 1.8-2.4 GHz RFID bands in some regulatory domains). Its 30 W output capability drives long-range interrogator antennas, while the integrated two-stage design eliminates external matching networks. The LDMOS ruggedness tolerates high VSWR presented by RFID antenna arrays, and the TO-272 plastic package allows compact reader module integration with a bolted heatsink. Verify regulatory limits for the target region (FCC Part 15, ETSI EN 302 208) before scaling output.
Recommended
Industrial RF Heating/Plasma Driver
The MW4IC2230MBR5's 1.6-2.4 GHz coverage and 30 W CW rating suit industrial RF heating, plasma generation, and materials processing applications in the 2 GHz microwave band. LDMOS ruggedness handles the high VSWR typical of unmatched plasma loads, while the integrated matching simplifies the front-end. The plastic TO-272 package allows compact OEM integration with forced-air or water-cooled heatsinks sized for sustained 30 W dissipation. Always comply with industrial RF safety exposure limits (IEEE C95.1, ICNIRP) when operating at full power.
Recommended
Wireless Infrastructure Repeater/Amplifier
The MW4IC2230MBR5's wideband coverage (1.6-2.4 GHz) makes it well suited for broadband RF repeater/amplifier modules that must pass multiple cellular bands without retuning. The integrated matching and high 31 dB gain support single-stage repeater architectures, while LDMOS linearity preserves modulated signal integrity across GSM, EDGE, W-CDMA and LTE air interfaces (with appropriate filtering). The TO-272 plastic package allows slim repeater chassis designs where space and weight are at a premium. Place adequate input/output isolators to prevent oscillation at high gain.
Recommended
Recommended Products Summary
Engineering reference data for MW4IC2230MBR5 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MW4IC2230MBR1 | MW4IC2230NBR1 | MW4IC2230GMBR1 | AFT27S010NT1 | MRF7S21150HSR3 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-272 WB-16 | TO-272 WB-16 - same | TO-272 WB-16 - same | TO-272 WB-16 - same | TO-272 WB-16 - same | TO-272 WB-16 - same |
| Frequency Range | 1.6 GHz to 2.4 GHz | 1.6 GHz to 2.4 GHz | 1.6 GHz to 2.4 GHz | 1.6 GHz to 2.4 GHz | 1.8 GHz to 2.4 GHz | 2.11 GHz to 2.17 GHz (UMTS) |
| Output Power (CW) | 30 W | 30 W | 30 W | 30 W | 10 W (-67%) | 150 W (+400%) |
| Power Gain | 31 dB | 31 dB | 31 dB | 31 dB | ~30 dB | ~16 dB (driver-stage gain) |
| Supply Voltage (Vdd) | 26 V | 26 V | 26 V | 26 V | 28 V | 28 V |
| Technology | LDMOS | LDMOS | LDMOS | LDMOS | LDMOS (later generation) | LDMOS (later generation) |
| Lifecycle Status | Obsolete (as of 2026-10-15) | Obsolete | Obsolete | Obsolete | Active (recommended for new designs) | Active (recommended for new designs) |
Key Differentiators
- Same TO-272 WB-16 footprint as the rest of the MW4IC family (vs AFT27S010NT1)
- 30 W CW vs 150 W CW (footprint compatibility enables upgrades) (vs MRF7S21150HSR3)
- Wideband 1.6-2.4 GHz coverage in a single integrated two-stage design (vs MW4IC2230MBR1)
Design Notes
Estimated: At 30 W CW RF output and ~25% DC-to-RF efficiency, the MW4IC2230MBR5 dissipates roughly 90 W as heat. The TO-272 WB-16 package requires an external heatsink with thermal resistance below 0.5 C/W to keep junction temperature below 150 C at 25 C ambient. Use NXP's reference-design heatsink or a bolted copper spreader with forced-air cooling. Without adequate cooling the device will thermally shut down or suffer accelerated MTTF degradation.
Mount the MW4IC2230MBR5 on a PCB with an unbroken copper ground/thermal plane directly under the package exposed pad, with thermal vias (0.3 mm diameter, 1 mm pitch, filled or capped with solder) connecting top and bottom copper. RF input/output traces must be 50 ohm microstrip or grounded coplanar waveguide (GCPW) on the recommended substrate (typically Rogers RO4350 or equivalent). Keep gate-bias traces short and isolated from RF traces to prevent parasitic feedback and oscillation at 31 dB gain.
Follow NXP's MW4IC2230M reference design for bias-network layout. Use separate bias feeds for stage 1 and stage 2 (Vgg1, Vgg2) with local 100 nF + 10 uF + 100 uF decoupling. The 26 V supply rail must be heavily decoupled with low-ESR electrolytic capacitors and a pi-filter to suppress switching-converter ripple. Add 50 ohm input/output isolators or at minimum 6 dB attenuators to prevent load-pull-driven oscillation under high VSWR.
Do not apply Vdd before Vgg - the device must be biased gate-first per NXP's sequencing requirements to avoid thermal runaway and device destruction. Do not exceed the absolute maximum Vdd rating of 28 V (30 V with derating). Do not operate without proper heatsink attachment - the over-molded plastic package requires a flat, thermally-conductive mounting surface. Finally, do not skip input/output harmonic filtering - the 2 GHz fundamental can produce significant 2nd/3rd harmonic content that violates regulatory masks.
Compliance Information
RoHS/REACH status not explicitly stated in the verified distributor data as of 2026-10-15. The MW4IC2230 series predates many RoHS mandates and may fall under exemption 7a (lead-bearing solder for RF power packages). Contact NXP directly for the latest material declaration. AEC-Q100 not applicable - this is an RF power transistor, not an automotive-qualified IC.
