MW6IC2240NBR1 - 2.11-2.17 GHz 4.5W RF LDMOS Amplifier | NXP
MPN: MW6IC2240NBR1 ✗ End of Life| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $38.5 | $38.50 |
| 10 | $34.2 | $342.00 |
| 100 | $28.9 | $2,890.00 |
| 500 | $23.5 | $11,750.00 |
| 1,000 | $19.8 | $19,800.00 |
MW6IC2240NBR1 Overview
An RF power amplifier (PA) is the final active stage that boosts a low-level RF signal from a transceiver or up-converter to the transmit power required to reach the base station antenna. Within the transmitter chain, the PA sits after the up-converter and before the duplexer/filter; LDMOS (Laterally Diffused Metal-Oxide Semiconductor) technology has dominated cellular base-station PAs since the late 1990s because of its high RF power density, high efficiency at 28-32 V, and proven reliability in continuous-wave and modulated service. The MW6IC2240N sits in the driver tier - it pre-amplifies the signal ahead of a higher-power final stage, or, with its 4.5 W average rating, can serve directly as a small-cell or picocell final stage.
Key specifications include 29 dB power gain in the typical 2-carrier W-CDMA operating point (VDD = 28 V, Pout = 25 dBm average, full 2110-2170 MHz band, channel bandwidth 3.84 MHz, PAR 8.5 dB @ 0.01% CCDF). Linearity is characterized by IM3 of -59 dBc at 10 MHz offset and ACPR of -62 dBc at 5 MHz offset - the metrics that determine whether a PA meets 3GPP spectral-emission masks. Quiescent bias is set externally at IDQ1 = 300 mA and IDQ2 = 320 mA for the two integrated stages, and the device tolerates a 3:1 VSWR load mismatch at 28 Vdc / 2170 MHz / 20 W CW without damage, simplifying the system protection design.
The IC integrates two cascaded gain stages on a single die with 50 Ω single-ended RF ports on each path, internal matching networks, and ESD protection on the gate terminals. Operation from 26 V to 32 V lets designers trade off efficiency versus headroom; lower VDD improves efficiency at the cost of gain and linearity, higher VDD does the reverse. Thermal resistance from junction to case supports the 4.5 W average rating when mounted to a properly heatsunk PCB copper pad.
Typical applications include W-CDMA/TD-SCDMA driver stages in macro and micro base stations, picocell and femtocell final stages, and driver amplification for higher-power booster amplifiers in the 2.1 GHz band. The integrated matching makes it usable in any 2110-2170 MHz system without per-board RF tuning, which reduces both design time and production variation.
When designing with this part, prioritize thermal performance: at 4.5 W average output and class-AB bias the device dissipates on the order of 10-15 W, so the TO-272 WB-16 package must be soldered to a copper ground pad of at least several square centimeters with thermal vias to the inner plane. DC blocking capacitors on RF input and output must be rated for the full supply rail and the W-CDMA peak voltage; an external bias sequencing circuit is recommended to prevent thermal overstress during turn-on.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet. All specifications are quoted from the NXP MW6IC2240N datasheet; verification timestamps are shown in the data_sources block.
Drop-in alternatives for MW6IC2240NBR1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with MW6IC2240NBR1 (same form factor and footprint) — differing in Frequency Range, Package, Quiescent Current Stage 1 (IDQ1), Quiescent Current Stage 2 (IDQ2), Technology.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
MW6IC2240GNBR1
✅ Drop-In📋 Reference alternative (not in catalog)
MW7IC2240NBR1
✅ Drop-In✓ In Stock
$29 / Unit
View Datasheet →MW7IC930NBR1
✅ Drop-In📋 Reference alternative (not in catalog)
MW6IC2040NBR1
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
MW6IC2240NBR1 Maximum Ratings & Electrical Characteristics
| Technology | RF LDMOS (Laterally Diffused MOSFET) |
| RF Type | Cellular, W-CDMA, TD-SCDMA driver amplifier |
| Frequency Range | 2110 MHz to 2170 MHz |
| Supply Voltage (Operating) | 26 V to 32 V (typical 28 V) |
| Average Output Power (2-carrier W-CDMA) | 4.5 W (typ) |
| Power Gain | 29 dB (typ, 2-carrier W-CDMA, Pout = 25 dBm) |
| Drain Current (operating, Pout=25 dBm avg) | 210 mA (typ) |
| Quiescent Current Stage 1 (IDQ1) | 300 mA |
| Quiescent Current Stage 2 (IDQ2) | 320 mA |
| IM3 (10 MHz offset, 2-carrier W-CDMA) | -59 dBc (typ) |
| ACPR (5 MHz offset, 2-carrier W-CDMA) | -62 dBc (typ) |
| VSWR Tolerance | 3:1 at 28 Vdc, 2170 MHz, 20 W CW |
| Package | TO-272 WB-16 (over-molded plastic, 16-lead wideband) |
| Number of Stages | 2 (cascaded, integrated) |
| Input / Output Matching | On-chip, 50 ohm single-ended |
| RoHS Status | Compliant |
MW6IC2240NBR1 to-272 wb-16 (over-molded plastic, 16-lead wideband) Pin Configuration Guide
Pin configuration for MW6IC2240NBR1 (to-272 wb-16 (over-molded plastic, 16-lead wideband) package). This analog component features input, output, and power supply pins. Refer to the manufacturer datasheet for offset null, compensation, and enable pin configurations. Ideal for signal conditioning and amplifier circuits.
No detailed pinout data available for MW6IC2240NBR1.
Refer to the datasheet for full pin configuration.
Typical Applications
MW6IC2240NBR1 is suitable for 6 applications: W-CDMA Macro Base-Station Driver, TD-SCDMA Base-Station Driver Amplifier, Picocell / Femtocell Final Stage, Driver Stage for Higher-Power Booster Amplifier, 2.1 GHz Repeater / Indoor Coverage Amplifier, Test and Measurement RF Power Stage.
W-CDMA Macro Base-Station Driver
The MW6IC2240NBR1's 4.5 W average output, 29 dB gain, and -59 dBc IM3 at 10 MHz offset make it well suited as a driver stage ahead of a higher-power final PA in 2110-2170 MHz W-CDMA macro base stations. It runs from the standard 28 V base-station rail and accepts the 25 dBm input level typical of digital predistortion (DPD) feedback paths. Designers place it between the up-converter and the final LDMOS stage, using on-chip 50 Ω matching to avoid external baluns. The 3:1 VSWR tolerance simplifies the circulator/isolator protection network. Compared with a discrete two-stage design, the integrated matching reduces PCB area and per-board RF tuning time.
Recommended
TD-SCDMA Base-Station Driver Amplifier
The MW6IC2240NBR1 covers 2010-2025 MHz TD-SCDMA allocations as part of its 2110-2170 MHz matching bandwidth, making it usable in TD-SCDMA driver chains with relaxed matching. With 4.5 W average output at 28 V and ACPR of -62 dBc at 5 MHz offset, it meets the TD-SCDMA spectral mask requirements. The two-stage integrated design with on-chip matching reduces board complexity versus a discrete two-amplifier chain. Quiescent currents of IDQ1 = 300 mA and IDQ2 = 320 mA bias the device in class AB for the best efficiency/linearity trade-off in TD-SCDMA service. Thermal performance relies on the PCB copper pad and via field under the TO-272 WB-16 thermal slug.
Recommended
Picocell / Femtocell Final Stage
At 4.5 W average output the MW6IC2240NBR1 can serve directly as the final PA in small-cell base stations where 25 dBm average transmit power is sufficient. Its 29 dB gain means the transceiver output can be in the -4 dBm range, eliminating a separate gain block. The integrated 50 Ω matching simplifies the picocell RF front-end to a few filter and duplexer components. Efficiency at the picocell operating point is acceptable because the duty cycle is low compared with a macro cell. The TO-272 WB-16 footprint allows compact PCB layouts typical of picocell modules. Thermal dissipation of 10-15 W at full output still requires a copper thermal pad, but no forced-air cooling.
Recommended
Driver Stage for Higher-Power Booster Amplifier
When a 2.1 GHz system needs more than 4.5 W average output, the MW6IC2240NBR1 is a strong driver candidate ahead of an AFT20 or AFT27 final-stage LDMOS part. Its 29 dB gain provides the level shift needed to push 5-10 W final stages into saturation with margin. The -62 dBc ACPR at 5 MHz offset sets the linearity floor that the final stage and DPD loop must improve upon. Quiescent bias is stable across temperature when the recommended gate bias circuits are used. The TO-272 WB-16 package shares the same NXP evaluation-board ecosystem as the higher-power final parts, simplifying prototype bring-up.
Recommended
2.1 GHz Repeater / Indoor Coverage Amplifier
Repeaters and indoor coverage amplifiers operating in the 2110-2170 MHz band use the MW6IC2240NBR1 as a mid-power gain stage where 4.5 W average is sufficient for the downlink path. The wideband matching covers all W-CDMA channels without per-channel tuning. The 3:1 VSWR tolerance protects the device when antennas are disconnected or shorted during installation. Internal matching simplifies the BOM by removing external baluns and inter-stage networks. The device's high gain of 29 dB reduces the number of stages needed in the repeater chain, lowering overall cost. Thermal design uses the standard PCB copper-pour technique documented in the datasheet.
Recommended
Test and Measurement RF Power Stage
In laboratory and production test setups that need a calibrated 4.5 W stimulus in the 2110-2170 MHz band, the MW6IC2240NBR1 provides a compact, repeatable RF power source. Its 29 dB gain lets a low-level signal generator drive the input directly. The -59 dBc IM3 performance is well characterized, supporting production linearity testing of W-CDMA devices under test. The TO-272 WB-16 package is straightforward to mount on a test PCB with the standard heatsink footprint. Designers can use the datasheet's 2-carrier W-CDMA test fixture as a starting point and adapt the matching slightly for instrumentation use.
Recommended
Recommended Products Summary
Engineering reference data for MW6IC2240NBR1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MW6IC2240GNBR1 | MW7IC2240NBR1 | MW7IC930NBR1 | MW6IC2040NBR1 |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-272 WB-16 | TO-272 WB-16 - same | TO-272 WB-16 - same | TO-272 WB-16 - same | TO-272 WB-16 - same |
| Frequency Range | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz | 920-960 MHz | 1930-1990 MHz |
| Average Output Power (2-carrier W-CDMA) | 4.5 W | 4.5 W | 4.5 W | 4.5 W (different band) | ~4 W |
| Power Gain | 29 dB | 29 dB | ~30 dB | ~30 dB (different band) | 29 dB |
| Supply Voltage | 26-32 V (28 V typ) | 26-32 V | 26-32 V | 26-32 V | 26-32 V |
| IM3 @ 10 MHz Offset | -59 dBc | -59 dBc | ~-62 dBc | ~-60 dBc | -59 dBc |
| ACPR @ 5 MHz Offset | -62 dBc | -62 dBc | ~-65 dBc | ~-63 dBc | -62 dBc |
| Lifecycle Status | Obsolete | Obsolete | NRND / Limited | NRND / Limited | Obsolete |
Key Differentiators
- Pin-compatible generation-upgrade path to MW7 family (vs MW7IC2240NBR1)
- Single-family 'G' variant for tuning flexibility (vs MW6IC2240GNBR1)
- Integrated on-chip 50 ohm matching (vs Discrete two-stage LDMOS driver (e.g., separate AFT18 + balun))
Design Notes
At 4.5 W average RF output and class-AB quiescent bias, the MW6IC2240NBR1 dissipates an estimated 10-15 W internally. Estimated based on VDD=28 V, IDQ_total ~620 mA, Pout=4.5 W. Solder the exposed thermal pad of the TO-272 WB-16 package to a PCB copper pour of at least several square centimeters, stitched with thermal vias (typically 0.3 mm pitch) to an inner ground plane. Without this thermal management the junction will exceed rated temperature and reliability suffers.
Use controlled-impedance 50 ohm microstrip or stripline for the RF input and output traces, routed away from the bias lines to avoid coupling. Place the DC blocking capacitors on the RF input and output as close as possible to the package leads, and keep the gate-bias network (resistor to negative supply with bypass cap) within a few millimeters of the gate leads. The on-chip matching eliminates external baluns, but the PCB must still provide a clean 50 ohm environment at the package reference plane.
Do not exceed 32 V on the drain supply; even brief transients above 32 V can permanently damage LDMOS gate structures. Apply gate voltage before (or simultaneously with) drain voltage to prevent device operation in an undefined bias region. Do not operate without the recommended quiescent current (IDQ1=300 mA, IDQ2=320 mA) - lower bias reduces linearity and may cause thermal runaway. Confirm that the load VSWR stays within the 3:1 rating under all antenna-fault conditions.
Separate the RF ground (connected to the package leads and thermal pad) from the low-frequency bias ground to prevent feedback oscillations. Use a star-ground topology at the device and route bias returns directly to the power supply. Place a 10 uF / 100 nF bypass network close to the drain lead to filter RF leakage on the supply rail, and use ferrite beads if multiple PAs share a common rail.
Compliance Information
RoHS compliant per NXP product documentation; matte-tin lead finish. Not AEC-Q100 qualified (RF power amplifier for base-station infrastructure, not automotive). Conflict-mineral reporting per NXP corporate policy.
