MW7IC3825GNR1 - 3.4-3.6GHz, 5W LDMOS RF Power Amplifier | NXP
MPN: MW7IC3825GNR1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $36.5 | $36.50 |
| 10 | $32.85 | $328.50 |
| 100 | $29.2 | $2,920.00 |
| 500 | $26.4 | $13,200.00 |
| 1,000 | $23.75 | $23,750.00 |
MW7IC3825GNR1 Overview
An RF power amplifier (RF PA) is the final active stage in a wireless transmitter chain that boosts a low-level modulated RF signal up to the watt-level power required to drive an antenna. RF PAs are evaluated against three critical figures of merit - efficiency (DC-to-RF conversion), linearity (fidelity of amplified modulation), and gain (signal amplification magnitude in dB) - and they are categorized by device technology including LDMOS (Laterally Diffused Metal-Oxide Semiconductor), GaN (Gallium Nitride), and GaAs (Gallium Arsenide). RF power amplifiers sit within the broader hierarchy of RF and microwave components > discrete semiconductors > power transistors. LDMOS technology remains the workhorse for sub-3.8 GHz cellular infrastructure because of its high efficiency, easy broadband matching, and low cost per watt compared to GaN.
Key features of the MW7IC3825GNR1 include integrated on-chip matching for the entire 3400-3600 MHz band, multi-stage internal topology that delivers high gain in a single IC, and high power added efficiency (PAE) typical for class-AB operation. The device is rated for 26 V to 32 V supply operation and includes built-in protection circuitry against high VSWR (Voltage Standing Wave Ratio) conditions up to 10:1, making it rugged for base station environments where antenna mismatches are common.
The MW7IC3825N family uses NXP's seventh-generation LDMOS process with a multi-stage cascade that combines a driver stage and a final power stage on a single die. Internal matching networks use bond-wire inductors and integrated capacitors to present 50 ohm interfaces at input and output, which simplifies board layout and reduces the BOM (Bill of Materials) compared to discrete PA solutions requiring external baluns and combiners.
Typical applications include WiMax base station final-stage amplifiers, 3.5 GHz fixed-wireless CPE (Customer Premises Equipment) transmitters, LTE small-cell / picocell infrastructure operating in the 3.4-3.6 GHz band, and military or industrial RF communication links in the same band.
When designing with this part, ensure that the PCB uses a copper-flanged backside mount with sufficient thermal vias to keep the junction temperature under the datasheet maximum. Because the device is designed for 50 ohm systems, antenna mismatches above 10:1 VSWR require an external isolator or circulator to protect the output stage.
This page synthesizes distributor pricing, package-level pinout analysis, and application guidance that complement (and do not replace) the NXP manufacturer datasheet for the MW7IC3825GNR1.
Drop-in alternatives for MW7IC3825GNR1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
MW7IC3825NR1
✅ Drop-In📋 Reference alternative (not in catalog)
MW7IC3825NBR1
✅ Drop-In📋 Reference alternative (not in catalog)
MW7IC3825GR1
✅ Drop-In📋 Reference alternative (not in catalog)
MW7IC3825GNR1 Maximum Ratings & Electrical Characteristics
| Manufacturer | NXP Semiconductors |
| Part Type | RF LDMOS Wideband Integrated Power Amplifier |
| Operating Frequency Range | 3400 MHz to 3600 MHz |
| Supply Voltage | 26 V to 32 V (32 V max) |
| Supply Current | 230 mA (typical) |
| Average Output Power | 5 W (CW / modulated) |
| Power Gain | 25 dB (typical) |
| Package | TO-270 WBL-16, Gull Wing (16-pin) |
| Input / Output Impedance | 50 ohm (on-chip matched) |
| Maximum VSWR | 10:1 (all phase angles) |
| RF Type / Application | WiMax / 3.5 GHz cellular base station |
| Mounting Type | Surface Mount (Gull Wing) |
| Package Body Material | Plastic / Epoxy |
| JESD-609 Code | e3 (matte tin finish, RoHS-compatible) |
| Technology | LDMOS, multi-stage on-chip matching |
| Packaging | Tape & Reel (TR) |
MW7IC3825GNR1 Pin Configuration
| Pin 1 | RFIN — RF input (50 ohm, on-chip matched) |
| Pin 2 | GND — RF/DC ground (backside flange is the primary ground path) |
| Pin 3 | GND — RF/DC ground |
| Pin 4 | VGG — Gate bias supply (low-current) |
| Pin 5 | GND — RF/DC ground |
| Pin 6 | NC — Not connected (no internal bond per datasheet) |
| Pin 7 | NC — Not connected (no internal bond per datasheet) |
| Pin 8 | NC — Not connected (no internal bond per datasheet) |
| Pin 9 | NC — Not connected (no internal bond per datasheet) |
| Pin 10 | NC — Not connected (no internal bond per datasheet) |
| Pin 11 | GND — RF/DC ground |
| Pin 12 | VDD — Drain supply (26-32 V) |
| Pin 13 | VDD — Drain supply (26-32 V) |
| Pin 14 | GND — RF/DC ground |
| Pin 15 | RFOUT — RF output (50 ohm, on-chip matched) |
| Pin 16 | GND — RF/DC ground |
Safe Operating Area (DC, estimated from datasheet ratings)
Typical Applications
MW7IC3825GNR1 is suitable for 6 applications: WiMax Base Station Final-Stage PA, 3GPP LTE Band 42/43 Small-Cell Transmitter, CBRS / C-Band Fixed Wireless CPE, Industrial / Military 3.5 GHz RF Link, Driver Stage for Higher-Power Doherty PA, Test Equipment and Instrumentation PA.
WiMax Base Station Final-Stage PA
The MW7IC3825GNR1's 3400-3600 MHz band coverage and 5 W average output power make it a direct drop-in for the final RF stage of WiMax (IEEE 802.16) base stations operating in the global 3.5 GHz WiMax band. Its integrated on-chip input and output matching networks present 50 ohm at both ports, eliminating external baluns and reducing PCB layout complexity - a significant BOM savings versus discrete two-stage LDMOS designs. The 25 dB power gain allows a small driver IC upstream to saturate the MW7IC3825GNR1 to P1dB without adding pre-driver stages. Linear efficiency at 5 W average is typically sufficient for the 64-QAM modulation profiles common in WiMax. The TO-270 WBL-16 copper flange is soldered to the PCB heat-spreader and backed with thermal vias for 8-12 W continuous dissipation at typical bias. Use a circulator or isolator at the antenna port to protect the output stage against antenna VSWR excursions above 10:1.
Recommended
3GPP LTE Band 42/43 Small-Cell Transmitter
The 3400-3600 MHz band overlaps 3GPP LTE Band 42 and Band 43 (3.5 GHz TDD-LTE), making the MW7IC3825GNR1 well-suited for small-cell and picocell base-station transmitters. At 5 W average output, this device drives the antenna section of a single-sector outdoor small cell with adequate link-budget margin. Multi-stage internal amplification (driver + final) means a low-level transceiver chip can drive the MW7IC3825GNR1 input directly without an additional pre-driver. Designers must, however, evaluate EVM (Error Vector Magnitude) under the LTE modulation profile they target - 64-QAM typically requires backing the output below P1dB by 4-6 dB. The TO-270 WBL-16 package's copper flange enables proper heat-sinking for continuous LTE TDD duty cycles (~75%).
Recommended
CBRS / C-Band Fixed Wireless CPE
In CBRS (Citizens Broadband Radio Service, 3550-3700 MHz, US) and international C-band fixed-wireless customer-premises equipment (CPE), the MW7IC3825GNR1 provides the high-gain final RF stage required to overcome path loss. The 25 dB power gain compresses the link budget deficit and reduces transmit-power requirements on upstream drivers. Integrated 50 ohm matching simplifies matching across environmental changes and PCB manufacturing tolerances - a key advantage in outdoor CPE environments. At 5 W average, MW7IC3825GNR1 is appropriate for subscriber-side transmitters (lower power than the base station but more than indoor small cell). The LDMOS process handles the long-term duty cycle of fixed-wireless operation without thermal cycling reliability concerns.
Recommended
Industrial / Military 3.5 GHz RF Link
Defense and industrial communication systems operating in the 3400-3600 MHz band - including tactical data links and secure point-to-point backhaul - can use the MW7IC3825GNR1 as the final PA. The 10:1 VSWR tolerance provides ruggedness against antenna mismatches common in field-deployed military scenarios where antennas may be damaged, iced, or improperly connected. LDMOS technology delivers robust performance across environmental temperature ranges required for MIL-spec applications. The TO-270 WBL-16 package is mechanically stable under vibration and shock loads. For mission-critical applications, the NXP G-screening grade adds reliability testing that may be required by defense procurement specifications.
Recommended
Driver Stage for Higher-Power Doherty PA
Although the MW7IC3825GNR1 is rated at 5 W average, it can also serve as the driver stage in a two-IC cascaded or Doherty PA architecture for higher-power base-station applications. The 25 dB gain and 5 W output provide the input power required to drive a follow-on LDMOS or GaN final stage that may need 25-50 W output. Designers stack two MW7IC3825GNR1 devices when the application requires higher linearity before the final stage. The integrated 50 ohm interfaces simplify both inter-stage matching and the post-combiner network when used in a balanced or push-pull Doherty topology. Pay attention to inter-stage stability - the high gain at 26 V supply can drive oscillation if source/load impedances are not well controlled.
Recommended
Test Equipment and Instrumentation PA
RF test instrumentation - including signal-generator upconverters, RF power meter test sources, and wireless-test chamber amplifiers - can use the MW7IC3825GNR1 for the 3.5 GHz band. The wide 200 MHz band coverage (3400-3600 MHz) and on-chip matching simplify test-system calibration across all relevant channels. CW capability (continuous wave, not pulsed) makes the device suitable for CW test tones as well as modulated test vectors. Adding an output attenuator downstream enables adjustable output levels for receiver sensitivity measurements. The JEDEC JESD-609 e3 lead-free finish supports compliance with RoHS test equipment directives in EU markets.
Recommended
Recommended Products Summary
Engineering reference data for MW7IC3825GNR1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MW7IC3825NR1 | MW7IC3825NBR1 | MW7IC3825GR1 |
|---|---|---|---|---|
| Package | TO-270 WBL-16 (Gull Wing) | TO-270 WBL-16 (Gull Wing) - same | TO-270 WBL-16 (Gull Wing) - same | TO-270 WBL-16 (Gull Wing) - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Operating Frequency Range | 3400 MHz to 3600 MHz | 3400 MHz to 3600 MHz | 3400 MHz to 3600 MHz | 3400 MHz to 3600 MHz |
| Output Power (Average) | 5 W | 5 W | 5 W | 5 W |
| Power Gain | 25 dB | 25 dB | 25 dB | 25 dB |
| Supply Voltage | 26 V to 32 V | 26 V to 32 V | 26 V to 32 V | 26 V to 32 V |
| Supply Current (typical) | 230 mA | 230 mA | 230 mA | 230 mA |
| On-Chip Matching | Yes (input and output, 50 ohm) | Yes | Yes | Yes |
| Maximum VSWR | 10:1 | 10:1 | 10:1 | 10:1 |
| Screening / Test Grade | G (per family datasheet) | Standard (no G suffix) | NB grade | G, alternate packing suffix |
Key Differentiators
- Higher screening / test grade (G suffix) (vs MW7IC3825NR1)
- Pin-compatible alternate-test-grade variation within same family (vs MW7IC3825NBR1)
- Integrated on-chip input/output matching (vs Discrete two-stage LDMOS PA designs)
Design Notes
Estimated: At 28 V supply and 230 mA drain current, the MW7IC3825GNR1 dissipates approximately 6.4 W of DC power; with 5 W RF output, around 1.4 W remains as heat in the PA, for a total thermal load near 6-7 W. The TO-270 WBL-16 copper flange must be soldered to a copper heat-spreader land pattern with a via-array thermal connection (estimate 0.5 sq-inch copper per side minimum) to keep the junction temperature rise under 50 degrees C above ambient. Always confirm the thermal design at the maximum operating ambient with the datasheet thermal-resistance data.
Use a 50 ohm microstrip or grounded coplanar waveguide (GCPW) transmission line on the input and output traces, with the reference plane unbroken beneath the matching and IC footprint. Place the gate-bias and drain-supply decoupling capacitors as close as possible to the package leads (within 100 mil), and route DC supplies radially through ferrite beads to suppress RF leakage back into the power rails. The copper flange pad must have no solder mask aperture (defined as copper with solder coating) and vias should be filled/capped to prevent solder wicking away from the flange.
Estimated: Do not exceed the 32 V maximum drain supply rating - inductive flyback from supply transients can spike above this and damage the LDMOS die. Place a TVS (transient-voltage-suppressor) diode rated around 33 V across the drain supply to absorb transients on long power-cable runs. Also avoid operating the device into an open-circuit load (VSWR > 10:1) without an isolator or circulator, as this can cause parametric drift or permanent damage to the final-stage bond wires.
The TO-270 WBL-16 gull-wing leads are pitched at typical JEDEC SOP spacing; route RF traces straight without sharp angles to minimize reactive parasitics. Place the gate-bias network in a low-pass pi or T configuration with a ferrite bead for noise filtering, since gate impedance is high and bias-network noise couples directly to the RF path. Keep digital control and bias-generation circuitry at least one component spacing away from the RF chain to prevent coupling.
Compliance Information
RoHS compliance inferred from JESD-609 e3 finish code (matte tin, lead-free). REACH, halogen-free, and conflict-minerals status were not provided in the verified web data - refer to NXP product compliance documentation for full disclosure. AEC-Q100 does not apply - this is not an automotive-qualified part.
