STF6N52K3 - 6A, 525V N-Channel Power MOSFET | STMicroelectronics
MPN: STF6N52K3 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.25 | $1.25 |
| 10 | $1.12 | $11.20 |
| 100 | $0.98 | $98.00 |
| 500 | $0.87 | $435.00 |
| 1,000 | $0.79 | $790.00 |
Drop-in alternatives for STF6N52K3 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
STF6N52K3-1
β Drop-Inπ Reference alternative (not in catalog)
STF6N52K3-2
β Drop-Inπ Reference alternative (not in catalog)
STF6N52K3-3
β Drop-Inπ Reference alternative (not in catalog)
IPP60R099CP
β Drop-Inπ Reference alternative (not in catalog)
FDP6N50
β Drop-Inπ Reference alternative (not in catalog)
STF6N52K3 Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 525 V |
| Continuous Drain Current (ID) at 25Β°C | 6 A |
| Pulsed Drain Current (IDM) | 24 A |
| On-Resistance (RDS(on)) at VGS=10V | 1.2 Ξ© (typical) |
| Gate-Source Voltage (VGS) | Β±30 V |
| Gate Charge (Qg) | 18 nC (typical) |
| Avalanche Energy (EAS) | 150 mJ |
| Power Dissipation (PD) at 25Β°C | 45 W |
| Operating Junction Temperature | -55Β°C to +150Β°C |
| Package | TO-220FP |
| Mounting Type | Through Hole |
| Thermal Resistance (Junction-to-Case) | 3.5 Β°C/W |
| Technology | MDmesh K3 |
| RoHS Status | Compliant |
STF6N52K3 Pin Configuration
| Pin 1 | Gate β Gate terminal for controlling the MOSFET |
| Pin 2 | Drain β Drain terminal, connected to the load |
| Pin 3 | Source β Source terminal, connected to ground |
Safe Operating Area (DC)
Typical Applications
STF6N52K3 is suitable for 6 applications: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, High-Voltage DC-DC Converters, Motor Drives, Uninterruptible Power Supplies (UPS).
Switch-Mode Power Supplies (SMPS)
The STF6N52K3 is ideal for SMPS due to its high breakdown voltage (525V) and low on-resistance (1.2Ξ©). In a typical flyback converter, the MOSFET switches at high frequency, and its low gate charge (18nC) reduces switching losses. The TO-220FP package allows easy heatsinking, ensuring reliable operation at power levels up to 45W. Compared to lower-voltage MOSFETs, the 525V rating provides ample margin for 380V DC bus systems, improving system reliability.
Recommended
Power Factor Correction (PFC)
In PFC circuits, the STF6N52K3 operates in boost converter topology to shape the input current waveform. Its high voltage rating (525V) handles the boosted output voltage (typically 400V), while the low RDS(on) minimizes conduction losses. The fast body diode reduces reverse recovery losses, improving efficiency. The device's avalanche capability (150mJ) ensures robustness during transient overvoltage conditions. With a gate charge of 18nC, the STF6N52K3 can be driven efficiently by standard PFC controllers.
Recommended
LED Lighting Drivers
The STF6N52K3 is suitable for LED drivers, especially in high-voltage applications like street lighting. Its 525V rating allows direct connection to rectified AC mains (up to 265VAC), simplifying the driver design. The low on-resistance reduces power loss, improving overall driver efficiency. The TO-220FP package provides thermal isolation, making it easier to mount on a heatsink without additional insulation. The device's fast switching speed enables high-frequency operation, reducing the size of magnetic components.
Recommended
High-Voltage DC-DC Converters
In high-voltage DC-DC converters, such as those used in solar inverters or electric vehicle chargers, the STF6N52K3 provides efficient switching. Its 525V rating is suitable for 380V DC bus systems, and the low gate charge enables high-frequency operation, reducing transformer size. The device's avalanche rating ensures reliability during inductive load switching. The TO-220FP package allows for straightforward thermal management, essential for high-power applications.
Recommended
Motor Drives
The STF6N52K3 can be used in motor drive applications, particularly for small to medium power motors. Its high voltage rating (525V) is suitable for 3-phase AC motor drives operating from 230VAC or 380VAC supplies. The low on-resistance minimizes conduction losses, and the fast switching reduces switching losses. The device's ruggedness, including avalanche capability, ensures reliable operation in inductive load switching. The TO-220FP package simplifies heatsinking in motor drive inverters.
Recommended
Uninterruptible Power Supplies (UPS)
In UPS systems, the STF6N52K3 is used in the inverter stage to convert DC to AC. Its high voltage rating (525V) handles the DC bus voltage (typically 360V), and the low on-resistance improves efficiency. The device's fast switching speed enables high-frequency PWM, reducing output filter size. The TO-220FP package provides thermal isolation, simplifying heatsink mounting. The avalanche capability ensures robustness during load transients.
Recommended
Recommended Products Summary
Engineering reference data for STF6N52K3 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | STF6N52K3-1 | IPP60R099CP | FDP6N50 |
|---|---|---|---|---|
| Package | TO-220FP | TO-220FP | TO-220 | TO-220 |
| Brand | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-Source Voltage (VDS) | 525 V | 525 V | 600 V | 500 V |
| Continuous Drain Current (ID) | 6 A | 6 A | 6 A | 6 A |
| On-Resistance (RDS(on)) | 1.2 Ξ© | 1.2 Ξ© | 0.099 Ξ© | 1.1 Ξ© |
| Gate Charge (Qg) | 18 nC | 18 nC | 38 nC | 20 nC |
| Power Dissipation (PD) | 45 W | 45 W | 104 W | 50 W |
| Avalanche Energy (EAS) | 150 mJ | 150 mJ | 200 mJ | 100 mJ |
Key Differentiators
- Low gate charge (18nC) enables faster switching (vs IPP60R099CP)
- Isolated TO-220FP package simplifies thermal management (vs FDP6N50)
- Higher avalanche energy rating (150mJ) for robustness (vs FDP6N50)
Design Notes
The STF6N52K3 has a maximum power dissipation of 45W at 25Β°C case temperature. For high-power applications, ensure adequate heatsinking. The TO-220FP package has a junction-to-case thermal resistance of 3.5Β°C/W. Calculate the required heatsink based on the power loss and ambient temperature. For example, at 20W dissipation, the junction temperature rise is 70Β°C above case temperature, so a heatsink with a thermal resistance of 2Β°C/W or lower is recommended.
For the TO-220FP package, ensure proper mounting to the heatsink with thermal compound. The tab is electrically isolated, so no insulation pad is needed. Keep the gate drive traces short and use a gate resistor (e.g., 10Ξ©) to reduce ringing. Place a 100nF ceramic capacitor close to the gate driver to supply peak gate current.
Do not exceed the maximum gate-source voltage of Β±30V. Use a zener diode or TVS for gate protection if the gate drive can overshoot. Also, ensure the drain-source voltage does not exceed 525V, especially during transients. The avalanche rating of 150mJ provides some margin, but repetitive avalanche events should be avoided.
Compliance Information
RoHS compliant per STMicroelectronics. Not AEC-Q100 qualified; for automotive, consider AEC-Q101 qualified parts.