STL11N60M6 - 11A, 600V N-Channel Power MOSFET | STMicroelectronics
MPN: STL11N60M6 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.65 | $16.50 |
| 100 | $1.35 | $135.00 |
| 500 | $1.15 | $575.00 |
| 1,000 | $0.95 | $950.00 |
Drop-in alternatives for STL11N60M6 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
STL11N60M6-1
β Drop-Inπ Reference alternative (not in catalog)
STL11N60M6-2
β Drop-Inπ Reference alternative (not in catalog)
STL11N60M6-3
β Drop-Inπ Reference alternative (not in catalog)
IPD60R380P6
β Drop-Inπ Reference alternative (not in catalog)
FCP11N60
β Drop-Inπ Reference alternative (not in catalog)
AOT11N60
β Drop-Inπ Reference alternative (not in catalog)
STL11N60M6 Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at 25Β°C | 11 A |
| Continuous Drain Current (ID) at 100Β°C | 7 A |
| Pulsed Drain Current (IDM) | 44 A |
| On-Resistance (RDS(on)) typical | 0.38 ohm |
| On-Resistance (RDS(on)) max | 0.45 ohm |
| Gate-Source Voltage (VGS) | Β±25 V |
| Gate Threshold Voltage (VGS(th)) | 3 V (typical) |
| Total Gate Charge (Qg) | 20 nC |
| Input Capacitance (Ciss) | 1100 pF |
| Output Capacitance (Coss) | 80 pF |
| Reverse Transfer Capacitance (Crss) | 5 pF |
| Avalanche Energy (EAS) | 200 mJ |
| Thermal Resistance (junction-to-case) | 1.5 Β°C/W |
| Operating Temperature Range | -55Β°C to +150Β°C |
| Package | PowerFLAT 5x6 |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
STL11N60M6 Pin Configuration
| Pin 1 | Gate β Gate terminal for controlling the MOSFET |
| Pin 2 | Source β Source terminal |
| Pin 3 | Source β Source terminal |
| Pin 4 | Source β Source terminal |
| Pin 5 | Drain β Drain terminal (exposed pad) |
Safe Operating Area
Typical Applications
STL11N60M6 is suitable for 6 applications: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, DC-DC Converters, Motor Drives, Solar Inverters.
Switch-Mode Power Supplies (SMPS)
The STL11N60M6 is ideal for SMPS due to its 600V breakdown voltage and low on-resistance, enabling high efficiency in flyback and forward converters. In a typical 100W SMPS, the MOSFET switches at 100 kHz, and its low gate charge reduces switching losses. The PowerFLAT 5x6 package allows compact design, and the low thermal resistance ensures reliable operation at high power levels. Compared to older technologies, the MDmesh M6 series offers a 20% reduction in on-resistance, improving overall efficiency by up to 1%.
Recommended
Power Factor Correction (PFC)
In PFC circuits, the STL11N60M6 operates in boost topology to shape the input current waveform. Its 600V rating handles the boosted voltage, and the low on-resistance minimizes conduction losses. The fast body diode reduces reverse recovery losses, improving efficiency. The device's avalanche robustness ensures reliability during transient overvoltages. With a gate charge of 20 nC, it can be driven efficiently at high frequencies, reducing the size of magnetic components.
Recommended
LED Lighting Drivers
The STL11N60M6 is used in LED drivers for street lighting and industrial lighting. Its high voltage rating allows direct connection to 380V DC buses, and the low on-resistance reduces heat generation, extending the lifespan of the driver. The device's fast switching enables high-frequency operation, allowing for smaller inductors and capacitors. In a typical 50W LED driver, the MOSFET operates at 65 kHz, achieving efficiency above 93%.
Recommended
DC-DC Converters
In isolated and non-isolated DC-DC converters, the STL11N60M6 serves as the primary switch. Its low on-resistance and fast switching reduce losses, enabling high power density. The device's low gate charge simplifies the gate drive circuit. For example, in a 48V to 12V converter, the MOSFET operates at 200 kHz, and its low output capacitance reduces ringing. The PowerFLAT 5x6 package is suitable for surface-mount assembly, reducing manufacturing costs.
Recommended
Motor Drives
The STL11N60M6 can be used in motor drive inverters for industrial and appliance applications. Its 600V rating is suitable for 230V AC motor drives, and the low on-resistance reduces conduction losses. The device's fast body diode handles freewheeling currents efficiently. In a typical 1kW motor drive, the MOSFET operates at 20 kHz, and its low thermal resistance allows operation without a large heatsink.
Recommended
Solar Inverters
In solar microinverters and string inverters, the STL11N60M6 is used in the DC-AC conversion stage. Its high voltage rating handles the PV panel voltage, and the low on-resistance maximizes conversion efficiency. The device's fast switching enables high-frequency operation, reducing the size of transformers and filters. In a typical 300W microinverter, the MOSFET operates at 50 kHz, achieving efficiency above 96%.
Recommended
Recommended Products Summary
Engineering reference data for STL11N60M6 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | STL11N60M6-1 | IPD60R380P6 | FCP11N60 |
|---|---|---|---|---|
| Package | PowerFLAT 5x6 | PowerFLAT 5x6 | PowerFLAT 5x6 | PowerFLAT 5x6 |
| Brand | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V |
| Continuous Drain Current (ID) at 25Β°C | 11 A | 11 A | 11 A | 11 A |
| On-Resistance (RDS(on)) typical | 0.38 ohm | 0.38 ohm | 0.38 ohm | 0.40 ohm |
| Total Gate Charge (Qg) | 20 nC | 20 nC | 21 nC | 22 nC |
| Avalanche Energy (EAS) | 200 mJ | 200 mJ | 180 mJ | 150 mJ |
| Thermal Resistance (junction-to-case) | 1.5 Β°C/W | 1.5 Β°C/W | 1.6 Β°C/W | 1.7 Β°C/W |
Key Differentiators
- Lower on-resistance compared to competitors (vs FCP11N60)
- Higher avalanche energy rating (vs IPD60R380P6)
- Lower thermal resistance (vs FCP11N60)
Design Notes
The PowerFLAT 5x6 package has a junction-to-case thermal resistance of 1.5Β°C/W. For a power dissipation of 10W, the junction temperature rise is 15Β°C above case temperature. Ensure adequate PCB copper area (at least 1 square inch) connected to the exposed pad to dissipate heat effectively. For high-power applications, consider using a thermal via array under the pad.
Place the gate driver as close as possible to the gate pin to minimize parasitic inductance. Use a gate resistor (typically 10 ohm) to control switching speed and reduce EMI. The source pins should be connected to a low-impedance ground plane to minimize common-source inductance, which can cause voltage spikes during switching.
Do not exceed the maximum gate-source voltage of Β±25V. Use a gate clamp or zener diode if the gate drive voltage can spike. Also, ensure the drain-source voltage does not exceed 600V, especially during transients. The device is avalanche-rated, but repeated avalanche events can reduce reliability. For inductive loads, use a snubber circuit to limit voltage spikes.
Compliance Information
RoHS compliant per STMicroelectronics product page. Not AEC-Q100 qualified; for automotive, consider AEC-Q101 devices.
