STL11N60M6 - 11A, 600V N-Channel Power MOSFET | STMicroelectronics
부품 번호: STL11N60M6 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.65 | $16.50 |
| 100 | $1.35 | $135.00 |
| 500 | $1.15 | $575.00 |
| 1,000 | $0.95 | $950.00 |
STL11N60M6 개요
A power MOSFET is a type of field-effect transistor designed to handle significant power levels, typically used as a switch in power electronics. It operates by controlling the voltage on the gate terminal, which modulates the conductivity between the drain and source. Power MOSFETs are fundamental building blocks in switch-mode power supplies, motor drives, and lighting systems, where they enable efficient power conversion with minimal losses. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs.
Key features of the STL11N60M6 include its extremely low on-resistance, which reduces conduction losses, and its fast switching capability, which minimizes switching losses. The device also features a low gate charge, making it suitable for high-frequency operation. The MDmesh M6 technology provides an excellent figure of merit (RDS(on) x Qg), enabling higher efficiency compared to previous generations. The PowerFLAT 5x6 package offers a low thermal resistance of 1.5°C/W (junction-to-case), allowing for efficient heat dissipation.
Technically, the STL11N60M6 utilizes a vertical DMOS structure with a striped layout, optimizing the trade-off between on-resistance and capacitance. The device is avalanche-rated, with an avalanche energy of 200 mJ, ensuring robustness in inductive load switching. It also features a built-in diode with fast recovery characteristics, reducing reverse recovery losses in bridge topologies. The gate threshold voltage is 3V (typical), and the device can be driven with standard gate drivers.
Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and DC-DC converters. In these applications, the STL11N60M6's low on-resistance and fast switching enable high efficiency and reduced heat generation. For example, in a 100W PFC stage, the device can operate at frequencies up to 100 kHz with minimal losses.
When designing with this device, ensure proper gate drive voltage (typically 10V) to achieve the lowest on-resistance. Also, consider the thermal design: the PowerFLAT 5x6 package requires a sufficient copper area on the PCB for heat sinking. Additionally, a gate resistor may be needed to control switching speed and reduce EMI.
드롭인 대체품: STL11N60M6 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
STL11N60M6-1
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
STL11N60M6-2
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
STL11N60M6-3
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
IPD60R380P6
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
FCP11N60
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
AOT11N60
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
STL11N60M6 최대 정격 & 전기적 특성
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at 25°C | 11 A |
| Continuous Drain Current (ID) at 100°C | 7 A |
| Pulsed Drain Current (IDM) | 44 A |
| On-Resistance (RDS(on)) typical | 0.38 ohm |
| On-Resistance (RDS(on)) max | 0.45 ohm |
| Gate-Source Voltage (VGS) | ±25 V |
| Gate Threshold Voltage (VGS(th)) | 3 V (typical) |
| Total Gate Charge (Qg) | 20 nC |
| Input Capacitance (Ciss) | 1100 pF |
| Output Capacitance (Coss) | 80 pF |
| Reverse Transfer Capacitance (Crss) | 5 pF |
| Avalanche Energy (EAS) | 200 mJ |
| Thermal Resistance (junction-to-case) | 1.5 °C/W |
| 동작 온도 범위 | -55°C to +150°C |
| 패키지 | PowerFLAT 5x6 |
| 실장 유형 | Surface Mount |
| RoHS 상태 | Compliant |
STL11N60M6 핀 구성
| 핀 1 | Gate — Gate terminal for controlling the MOSFET |
| 핀 2 | Source — Source terminal |
| 핀 3 | Source — Source terminal |
| 핀 4 | Source — Source terminal |
| 핀 5 | Drain — Drain terminal (exposed pad) |
안전 동작 영역
일반적인 애플리케이션
STL11N60M6 적합 용도: 6 애플리케이션s: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, DC-DC Converters, Motor Drives, Solar Inverters.
Switch-Mode Power Supplies (SMPS)
The STL11N60M6 is ideal for SMPS due to its 600V breakdown voltage and low on-resistance, enabling high efficiency in flyback and forward converters. In a typical 100W SMPS, the MOSFET switches at 100 kHz, and its low gate charge reduces switching losses. The PowerFLAT 5x6 package allows compact design, and the low thermal resistance ensures reliable operation at high power levels. Compared to older technologies, the MDmesh M6 series offers a 20% reduction in on-resistance, improving overall efficiency by up to 1%.
추천
Power Factor Correction (PFC)
In PFC circuits, the STL11N60M6 operates in boost topology to shape the input current waveform. Its 600V rating handles the boosted voltage, and the low on-resistance minimizes conduction losses. The fast body diode reduces reverse recovery losses, improving efficiency. The device's avalanche robustness ensures reliability during transient overvoltages. With a gate charge of 20 nC, it can be driven efficiently at high frequencies, reducing the size of magnetic components.
추천
LED Lighting Drivers
The STL11N60M6 is used in LED drivers for street lighting and industrial lighting. Its high voltage rating allows direct connection to 380V DC buses, and the low on-resistance reduces heat generation, extending the lifespan of the driver. The device's fast switching enables high-frequency operation, allowing for smaller inductors and capacitors. In a typical 50W LED driver, the MOSFET operates at 65 kHz, achieving efficiency above 93%.
추천
DC-DC Converters
In isolated and non-isolated DC-DC converters, the STL11N60M6 serves as the primary switch. Its low on-resistance and fast switching reduce losses, enabling high power density. The device's low gate charge simplifies the gate drive circuit. For example, in a 48V to 12V converter, the MOSFET operates at 200 kHz, and its low output capacitance reduces ringing. The PowerFLAT 5x6 package is suitable for surface-mount assembly, reducing manufacturing costs.
추천
Motor Drives
The STL11N60M6 can be used in motor drive inverters for industrial and appliance applications. Its 600V rating is suitable for 230V AC motor drives, and the low on-resistance reduces conduction losses. The device's fast body diode handles freewheeling currents efficiently. In a typical 1kW motor drive, the MOSFET operates at 20 kHz, and its low thermal resistance allows operation without a large heatsink.
추천
Solar Inverters
In solar microinverters and string inverters, the STL11N60M6 is used in the DC-AC conversion stage. Its high voltage rating handles the PV panel voltage, and the low on-resistance maximizes conversion efficiency. The device's fast switching enables high-frequency operation, reducing the size of transformers and filters. In a typical 300W microinverter, the MOSFET operates at 50 kHz, achieving efficiency above 96%.
추천
추천 제품 요약
엔지니어링 참조 데이터: STL11N60M6 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | STL11N60M6-1 | IPD60R380P6 | FCP11N60 |
|---|---|---|---|---|
| Package | PowerFLAT 5x6 | PowerFLAT 5x6 | PowerFLAT 5x6 | PowerFLAT 5x6 |
| Brand | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V |
| Continuous Drain Current (ID) at 25°C | 11 A | 11 A | 11 A | 11 A |
| On-Resistance (RDS(on)) typical | 0.38 ohm | 0.38 ohm | 0.38 ohm | 0.40 ohm |
| Total Gate Charge (Qg) | 20 nC | 20 nC | 21 nC | 22 nC |
| Avalanche Energy (EAS) | 200 mJ | 200 mJ | 180 mJ | 150 mJ |
| Thermal Resistance (junction-to-case) | 1.5 °C/W | 1.5 °C/W | 1.6 °C/W | 1.7 °C/W |
주요 차별점
- Lower on-resistance compared to competitors (vs FCP11N60)
- Higher avalanche energy rating (vs IPD60R380P6)
- Lower thermal resistance (vs FCP11N60)
설계 노트
The PowerFLAT 5x6 package has a junction-to-case thermal resistance of 1.5°C/W. For a power dissipation of 10W, the junction temperature rise is 15°C above case temperature. Ensure adequate PCB copper area (at least 1 square inch) connected to the exposed pad to dissipate heat effectively. For high-power applications, consider using a thermal via array under the pad.
Place the gate driver as close as possible to the gate pin to minimize parasitic inductance. Use a gate resistor (typically 10 ohm) to control switching speed and reduce EMI. The source pins should be connected to a low-impedance ground plane to minimize common-source inductance, which can cause voltage spikes during switching.
Do not exceed the maximum gate-source voltage of ±25V. Use a gate clamp or zener diode if the gate drive voltage can spike. Also, ensure the drain-source voltage does not exceed 600V, especially during transients. The device is avalanche-rated, but repeated avalanche events can reduce reliability. For inductive loads, use a snubber circuit to limit voltage spikes.
규정 준수 정보
RoHS compliant per STMicroelectronics product page. Not AEC-Q100 qualified; for automotive, consider AEC-Q101 devices.